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Vertical CNT-Si Photodiode Array

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arxiv 2406.14818 v1 pith:QK5XMVSO submitted 2024-06-21 physics.optics physics.ins-det

classification physics.opticsphysics.ins-det
keywords photodiodearraycntsenhancementhigheralignedapplicationsbetter
verification ladder T0 review T1 audit T2 compute T3 formal
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A photodiode consisting of nanopillars of thin-film silicon p-i-n on an array of vertically aligned carbon nanotubes (CNTs) with a noncontinuous cathode electrode is demonstrated. The structure exploits the intrinsic enhancement of the CNTs electric field, which leads to reduction in the photodiodes operating voltage and response time and enhancement of optical coupling due to better light trapping, as compared with the conventional planar photodiode. These improvements translate to higher resolution and higher frame rate flat-panel imaging systems for a broad range of applications, including computed tomography and particle detection.

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