Modeling Filamentary Conduction in Reset Phase Change Memory Devices | Paper Citation Record

Observation 1c2d8f04-111e-4b5c-943d-431e8821603d · outbound

This paper cites Nanomaterials for optical data storage,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Nanomaterials for optical data storage,

Reference 1

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.998572Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 47c14f09-54af-42d1-90e2-82c3ef97baff · outbound

This paper cites Designing crystallization in phase-change materials for universal memory and neuro-inspired computing,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Designing crystallization in phase-change materials for universal memory and neuro-inspired computing,

Reference 2

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.982823Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 8d135630-5f64-4262-8332-ed2b223bb42a · outbound

This paper cites Does AI have a hardware problem?,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Does AI have a hardware problem?,

Reference 3

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.967858Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 005268fd-3939-480f-9395-8962f4c9cc5c · outbound

This paper cites Big data needs a hardware revolution,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Big data needs a hardware revolution,

Reference 4

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.953159Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation ad2e9fec-c491-4b6e-9c54-1bb8ba4d500a · outbound

This paper cites Scalable high performance main memory system using phase-change memory technology,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Scalable high performance main memory system using phase-change memory technology,

Reference 5

Resolution: verified exact; arxiv_id_nonexistent, observed 2026-08-09T17:30:22.290260Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation a04c3fa9-a4f6-4eb8-b71a-09533a52538d · outbound

This paper cites Perspectives of read head technology for 10 Tb/in2 recording,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Perspectives of read head technology for 10 Tb/in2 recording,

Reference 6

Resolution: verified exact; arxiv_id_nonexistent, observed 2026-08-09T17:30:22.060331Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation c6a6310c-62e7-48d6-ba67-8c6ff4e5691e · outbound

This paper cites Memory leads the way to better computing,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Memory leads the way to better computing,

Reference 7

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.937593Z

Source-reported events for the cited work

correction dated 2015-08-05. Source: crossref record 10.1038/nnano.2015.169->10.1038/nnano.2015.29:correction, observed 2026-07-11T03:04:11.896609+00:00. This notice travels one citation hop only.

Observation 072d4c15-93da-4e9e-bc60-a214e7128b56 · outbound

This paper cites Phase-change materials for rewriteable data storage,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Phase-change materials for rewriteable data storage,

Reference 8

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.921429Z

Source-reported events for the cited work

correction dated 2007-11-13. Source: crossref record 10.1038/nmat2077->10.1038/nmat2009:correction, observed 2026-07-11T03:14:22.892814+00:00. This notice travels one citation hop only.

Observation 8e1c6dd8-335f-425b-a9a6-234773bef8e0 · outbound

This paper cites Nanoionics-based resistive switching memories,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Nanoionics-based resistive switching memories,

Reference 9

Resolution: unresolved; no resolver link, observed 2026-08-09T17:30:17.828567Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 70267f8c-14aa-4277-8bd3-e5ea2aa22ff4 · outbound

This paper cites A new spin on magnetic memories,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices A new spin on magnetic memories,

Reference 10

Resolution: unresolved; no resolver link, observed 2026-08-09T17:30:17.832873Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 61ea225e-065b-4091-bb9e-bcf4e958fc9f · outbound

This paper cites Ferroelectric Memories,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Ferroelectric Memories,

Reference 11

Resolution: verified exact; arxiv_id_nonexistent, observed 2026-08-09T17:30:21.900241Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation e7b0f8d5-1222-498e-8b83-1aa387a03959 · outbound

This paper cites Recent progress in resistive random access memories: Materials, switching mechanisms, and performance,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Recent progress in resistive random access memories: Materials, switching mechanisms, and performance,

Reference 12

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.886535Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 40084420-44db-4073-9d01-7a79f06e9534 · outbound

This paper cites Phase-Change Memory - Towards a Storage-Class Memory,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Phase-Change Memory - Towards a Storage-Class Memory,

Reference 13

Resolution: verified exact; arxiv_id_nonexistent, observed 2026-08-09T17:30:21.710644Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 3debbebf-2cd5-429b-b624-b5aa06478cd5 · outbound

This paper cites Overview of candidate device technologies for storage-class memory,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Overview of candidate device technologies for storage-class memory,

Reference 14

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.869987Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation c07949c3-0874-4e5e-a0b7-215cea7d39df · outbound

This paper cites An overview of phase- change memory device physics,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices An overview of phase- change memory device physics,

Reference 15

Resolution: unresolved; no resolver link, observed 2026-08-09T17:30:17.854812Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 18c7c630-dea5-4650-8f4f-24faf706adb8 · outbound

This paper cites Phase change materials and phase change memory,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Phase change materials and phase change memory,

Reference 16

Resolution: unresolved; no resolver link, observed 2026-08-09T17:30:17.859117Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation b6d21227-228c-4807-9cdb-58d4fb7cf5b2 · outbound

This paper cites Phase change memory technology,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Phase change memory technology,

Reference 17

Resolution: unresolved; no resolver link, observed 2026-08-09T17:30:17.863387Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation b588df8d-33b0-47d9-b598-f927c3bdf693 · outbound

This paper cites Application of phase- change materials in memory taxonomy,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Application of phase- change materials in memory taxonomy,

Reference 18

Resolution: verified exact; arxiv_id_nonexistent, observed 2026-08-09T17:30:21.525610Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 7e4f0513-7e4f-4348-ab79-03400e171819 · outbound

This paper cites Compound materials for reversible, phase-change optical data storage,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Compound materials for reversible, phase-change optical data storage,

Reference 19

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.823187Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation b8158f70-0c26-4b79-864c-ba8021c049a5 · outbound

This paper cites High speed overwritable phase change optical disk material,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices High speed overwritable phase change optical disk material,

Reference 20

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.807500Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 7e842b23-7522-4826-a19a-54b4cbe4b4f4 · outbound

This paper cites Rapid‐phase transitions of GeTe‐Sb2Te3 pseudobinary amorphous thin films for an optical disk memory,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Rapid‐phase transitions of GeTe‐Sb2Te3 pseudobinary amorphous thin films for an optical disk memory,

Reference 21

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.791451Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 1c9c7ab1-7355-440f-96df-259ed43ce20b · outbound

This paper cites Insights into the Structure of the Stable and Metastable (GeTe)m(Sb2Te3)n Compounds,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Insights into the Structure of the Stable and Metastable (GeTe)m(Sb2Te3)n Compounds,

Reference 22

Resolution: unresolved; no resolver link, observed 2026-08-09T17:30:17.884841Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 8c0be65e-423b-4153-8be8-c802b722bada · outbound

This paper cites Electrical Transport in Crystalline and Amorphous Chalcogenide,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Electrical Transport in Crystalline and Amorphous Chalcogenide,

Reference 23

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.765984Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 59564718-bfe7-403d-9e57-a0356e764262 · outbound

This paper cites Material Engineering for PCM Device Optimization,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Material Engineering for PCM Device Optimization,

Reference 24

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.749668Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 12fcb735-9f93-4ff2-b235-51d944a5a3dd · outbound

This paper cites Electrical resistivity of liquid Ge2Sb2Te5 based on thin-film and nanoscale device measurements,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Electrical resistivity of liquid Ge2Sb2Te5 based on thin-film and nanoscale device measurements,

Reference 25

Resolution: verified exact; arxiv_id_nonexistent, observed 2026-08-09T17:30:21.301972Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 6d00ae0a-abb1-4fce-b667-ea63c5f41c3f · outbound

This paper cites Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy,

Reference 26

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.735312Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 418c7dab-9154-41f3-9a80-1003824bab66 · outbound

This paper cites Crystallization of germanium-antimony-tellurium amorphous thin film sandwiched between various dielectric protective films,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Crystallization of germanium-antimony-tellurium amorphous thin film sandwiched between various dielectric protective films,

Reference 27

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.719900Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 5a64327c-9bd8-4796-a167-851f8a5258fe · outbound

This paper cites Thickness dependence of the amorphous-cubic and cubic- hexagonal phase transition temperatures of GeSbTe thin films on silicon nitride,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Thickness dependence of the amorphous-cubic and cubic- hexagonal phase transition temperatures of GeSbTe thin films on silicon nitride,

Reference 28

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.704412Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation a8ccdc13-9c79-4557-bb83-c5c01e40b152 · outbound

This paper cites Modeling of thermoelectric effects in phase change memory cells,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Modeling of thermoelectric effects in phase change memory cells,

Reference 29

Resolution: verified exact; arxiv_id_nonexistent, observed 2026-08-09T17:30:21.093687Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation d7467cc4-3f97-48d6-8707-80b30a3e7159 · outbound

This paper cites Disorder-induced localization in crystalline phase- change materials,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Disorder-induced localization in crystalline phase- change materials,

Reference 30

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.688217Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 0b73ce93-cd68-4168-b487-439b891d368e · outbound

This paper cites High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films,

Reference 31

Resolution: unresolved; no resolver link, observed 2026-08-09T17:30:17.922365Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 990cfc90-4770-4b9c-8448-476698db3fc2 · outbound

This paper cites High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift,

Reference 32

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.662853Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 1c767f97-5262-486b-a12d-75b6c3ce6412 · outbound

This paper cites Phase change memory: Device physics, reliability and applications,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Phase change memory: Device physics, reliability and applications,

Reference 33

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.647601Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 848c4175-20d0-4c4c-ae59-898372d0237a · outbound

This paper cites An introduction to ovonic research,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices An introduction to ovonic research,

Reference 34

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.631749Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 6cdab800-ce30-409e-a589-f0dc51a4650c · outbound

This paper cites Modeling of set and reset operations of phase-change memory cells,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Modeling of set and reset operations of phase-change memory cells,

Reference 35

Resolution: verified exact; arxiv_id_nonexistent, observed 2026-08-09T17:30:20.829527Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 6d99cd09-9334-49eb-8e58-abeb3f63491d · outbound

This paper cites Operation dynamics in phase-change memory cells and the role of access devices,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Operation dynamics in phase-change memory cells and the role of access devices,

Reference 36

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.616726Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 6ead7aec-9aee-42c8-89fc-8162b644c5e8 · outbound

This paper cites Extracting the temperature distribution on a phase-change memory cell during crystallization,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Extracting the temperature distribution on a phase-change memory cell during crystallization,

Reference 37

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.601124Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation c2bf265d-4898-4fd6-8dd9-7ccd187a0938 · outbound

This paper cites Modeling heterogeneous melting in phase change memory devices,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Modeling heterogeneous melting in phase change memory devices,

Reference 38

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.583986Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation c02170ba-9586-4396-86ba-d6a0dfd3658f · outbound

This paper cites Modeling and impacts of the latent heat of phase change and specific heat for phase change materials,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Modeling and impacts of the latent heat of phase change and specific heat for phase change materials,

Reference 39

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.566614Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 06b75d96-19b3-440f-8acf-698f98fe5aee · outbound

This paper cites Modeling of Phase- Change Memory: Nucleation, Growth, and Amorphization Dynamics during Set and Reset: Part I- Effective Media Approximation,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Modeling of Phase- Change Memory: Nucleation, Growth, and Amorphization Dynamics during Set and Reset: Part I- Effective Media Approximation,

Reference 41

Resolution: verified exact; arxiv_id_nonexistent, observed 2026-08-09T17:30:20.369178Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 512e53b5-742d-400d-95a0-57362e09229f · outbound

This paper cites Higherature thermoelectric transport at small scales: Thermal generation, transport and recombination of minority carriers,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Higherature thermoelectric transport at small scales: Thermal generation, transport and recombination of minority carriers,

Reference 42

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.550887Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation ad3f08ce-2f31-42f6-9649-e62da1bfeda9 · outbound

This paper cites COMSOL 6.2 - COMSOL Multiphysics Reference Manual.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices COMSOL 6.2 - COMSOL Multiphysics Reference Manual

Reference 43

Resolution: verified fuzzy; raw_fallback, observed 2026-08-09T17:30:22.351800Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 56457961-4ac1-4b2f-86cc-cc2b2888773f · outbound

This paper cites Accelerating and Stopping Resistance Drift in Phase Change Memory Cells via High Electric Field Stress.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Accelerating and Stopping Resistance Drift in Phase Change Memory Cells via High Electric Field Stress

Reference 44

Resolution: unresolved; no resolver link, observed 2026-08-09T17:30:17.975295Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation e8414d1e-1c3c-4825-a292-004ce839f9a8 · outbound

This paper cites Stopping Resistance Drift in Phase Change Memory Cells,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Stopping Resistance Drift in Phase Change Memory Cells,

Reference 45

Resolution: verified fuzzy; raw_fallback, observed 2026-08-09T17:30:22.336473Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 0d813141-2efb-4f01-8d9a-dc4159d0daa9 · outbound

This paper cites Activation energy of metastable amorphous Ge2Sb2Te5 from room temperature to melt,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Activation energy of metastable amorphous Ge2Sb2Te5 from room temperature to melt,

Reference 46

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.535731Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 60febf1a-3db3-47a3-84ca-7185cd60d506 · outbound

This paper cites Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation,

Reference 47

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.519728Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation d947a49b-81ac-4f07-ba93-f06ab683e21e · outbound

This paper cites Electronic properties of amorphous and crystalline Ge2Sb 2Te5 films,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Electronic properties of amorphous and crystalline Ge2Sb 2Te5 films,

Reference 48

Resolution: unresolved; no resolver link, observed 2026-08-09T17:30:17.991754Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 2678e9a5-fa4e-404c-8971-f160d11b53ab · outbound

This paper cites Investigation of the optical and electronic properties of Ge 2Sb 2Te 5 phase change material in its amorphous, cubic, and hexagonal phases,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Investigation of the optical and electronic properties of Ge 2Sb 2Te 5 phase change material in its amorphous, cubic, and hexagonal phases,

Reference 49

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.494843Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 4b270c15-e58c-49ef-8b8b-8b5a5b3d67cb · outbound

This paper cites Work function contrast and energy band modulation between amorphous and crystalline Ge2Sb2Te5 films,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Work function contrast and energy band modulation between amorphous and crystalline Ge2Sb2Te5 films,

Reference 50

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.479791Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation d863cf2b-614d-4db0-ba7d-2907fe836532 · outbound

This paper cites Carrier transport mechanisms of titanium nitride and titanium oxynitride electron- selective contact in silicon heterojunction solar cells,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Carrier transport mechanisms of titanium nitride and titanium oxynitride electron- selective contact in silicon heterojunction solar cells,

Reference 51

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.465056Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation cb4ce699-3da2-4e22-ab86-429e5d1312a8 · outbound

This paper cites Atomistic Modeling of Charge‐Trapping Defects in Amorphous Ge‐Sb‐Te Phase‐Change Memory Materials,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Atomistic Modeling of Charge‐Trapping Defects in Amorphous Ge‐Sb‐Te Phase‐Change Memory Materials,

Reference 52

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.450755Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation ffca161c-d2f3-48ed-9d7f-48b693b335ee · outbound

This paper cites Inherent electron and hole trapping in amorphous phase-change memory materials: Ge 2 Sb 2 Te 5,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Inherent electron and hole trapping in amorphous phase-change memory materials: Ge 2 Sb 2 Te 5,

Reference 53

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.435700Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 07c49647-b188-49d6-8eca-8c7e7eed00d4 · outbound

This paper cites Electric-field-induced annihilation of localized gap defect states in amorphous phase-change memory materials,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Electric-field-induced annihilation of localized gap defect states in amorphous phase-change memory materials,

Reference 54

Resolution: verified exact; arxiv_id_nonexistent, observed 2026-08-09T17:30:20.129221Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 28596e15-7e8c-496e-8bef-2999478fca5e · outbound

This paper cites an unresolved cited work.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Unresolved cited work

Reference 55

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.418677Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 44f24b89-1c67-4062-8cf6-4700e4466d80 · outbound

This paper cites Threshold switching mechanism by high- field energy gain in the hopping transport of chalcogenide glasses,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Threshold switching mechanism by high- field energy gain in the hopping transport of chalcogenide glasses,

Reference 56

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.300263Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation b1740f70-d5f5-4385-8e90-5f247dd4e754 · outbound

This paper cites Short-time behaviour of demand and price viewed through an exactly solvable model for heterogeneous interacting market agents.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Short-time behaviour of demand and price viewed through an exactly solvable model for heterogeneous interacting market agents

Reference 57

Resolution: metadata mismatch; local_arxiv, observed 2026-08-09T17:30:19.967855Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation c582b898-f6e0-43f6-bee4-b0612077adbc · outbound

This paper cites High temperature setup for measurements of Seebeck coefficient and electrical resistivity of thin films using inductive heating,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices High temperature setup for measurements of Seebeck coefficient and electrical resistivity of thin films using inductive heating,

Reference 58

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.284844Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation fab665ed-670d-4bd6-9391-608b138105c1 · outbound

This paper cites Stopping Resistance Drift in Phase Change Memory Cells and Analysis of Charge Transport in Stable Amorphous Ge2Sb2Te5.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Stopping Resistance Drift in Phase Change Memory Cells and Analysis of Charge Transport in Stable Amorphous Ge2Sb2Te5

Reference 59

Resolution: unresolved; no resolver link, observed 2026-08-09T17:30:18.041271Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation a8e6f5db-dda4-4c06-add4-d42991dab689 · outbound

This paper cites Amorphous silicon thin film transistors,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Amorphous silicon thin film transistors,

Reference 60

Resolution: verified exact; arxiv_id_nonexistent, observed 2026-08-09T17:30:19.929657Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 253e1734-0562-4761-9b7c-7414092cc332 · outbound

This paper cites Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields,

Reference 61

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.269091Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation a007e020-f317-43a3-8d6e-edb4e9fc2b97 · outbound

This paper cites Electron velocity in Si and GaAs at very high electric fields,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Electron velocity in Si and GaAs at very high electric fields,

Reference 62

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.253100Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 7dfe7212-0af1-4c39-a771-6d1c8acaa7cd · outbound

This paper cites The impact of heater-recess and load matching in phase change memory mushroom cells,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices The impact of heater-recess and load matching in phase change memory mushroom cells,

Reference 63

Resolution: malformed identifier; no resolver link, observed 2026-08-09T17:30:18.059635Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 8cb85e5b-51c4-44d8-82d3-ad338eb42f0d · outbound

This paper cites Ovonic threshold switching characteristics,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Ovonic threshold switching characteristics,

Reference 64

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.226842Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 7b8606f0-1b3c-47ab-bc16-47f4dad70a78 · outbound

This paper cites Electrothermal Modeling of Ovonic Threshold Switches and Phase Change Memory Devices,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Electrothermal Modeling of Ovonic Threshold Switches and Phase Change Memory Devices,

Reference 65

Resolution: verified fuzzy; raw_fallback, observed 2026-08-09T17:30:22.321048Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation aeb85778-14d5-4b19-9669-d041da7fd526 · outbound

This paper cites Invited paper: Thin- film Ovonic threshold switch: Its operation and application in modern integrated circuits,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Invited paper: Thin- film Ovonic threshold switch: Its operation and application in modern integrated circuits,

Reference 66

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.209527Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 7ae12e5b-3358-409c-9602-96b47205f6f6 · outbound

This paper cites Field dependent conductivity and threshold switching in amorphous chalcogenides—Modeling and simulations of ovonic threshold switches and phase change memory devices,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Field dependent conductivity and threshold switching in amorphous chalcogenides—Modeling and simulations of ovonic threshold switches and phase change memory devices,

Reference 67

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.194412Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 8d64934e-ef49-4a8f-8fb0-af432117af08 · outbound

This paper cites Thermal environment impact on HfOx RRAM operation: A nanoscale thermometry and modeling study,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Thermal environment impact on HfOx RRAM operation: A nanoscale thermometry and modeling study,

Reference 68

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.179396Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation a3106e7d-c16b-4636-b874-ae85f1498132 · outbound

This paper cites Memristive switching mechanism for metal/oxide/metal nanodevices,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Memristive switching mechanism for metal/oxide/metal nanodevices,

Reference 69

Resolution: verified fuzzy; raw_fallback, observed 2026-08-09T17:30:22.305486Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 3d821ef5-c693-4ff3-b744-0a87616174ac · outbound

This paper cites Thermal characterization of gallium nitride p-i-n diodes,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Thermal characterization of gallium nitride p-i-n diodes,

Reference 70

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.164145Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation cbab2e4c-b471-45c7-9633-6669baf29cc5 · outbound

This paper cites Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory,

Reference 71

Resolution: verified exact; doi, observed 2026-08-09T17:30:18.148703Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

Observation 0e967874-a746-40f5-83cc-c641fd8296c3 · outbound

This paper cites Possible new effects in superconductive tunnelling,.

Modeling Filamentary Conduction in Reset Phase Change Memory Devices Possible new effects in superconductive tunnelling,

Reference 72

Resolution: malformed identifier; no resolver link, observed 2026-08-09T17:30:18.099191Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

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Reference resolution

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Pith citing papers