Typed states for the displayed outbound observations.
Source: paper_references, paper_reference_links, observed 2026-08-15T22:36:29.924293Z
Paper Citation Record · LEDGER
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering
As of 23 August 2026, this Paper Citation Record lists 68 of 68 outbound references and 0 inbound Pith citation observations for arXiv:2505.06809.
A citation records a reference. It does not transfer a finding from one paper to another.
Coverage vector
One-hop event checks from named stored sources.
Source: scholarly_work_events, retraction_status_cache, observed 2026-08-23T06:30:58.430688+00:00
Pith citing papers itemized under the disclosed page cap.
Source: paper_references, paper_reference_links
A source-named dated measurement, never combined with another source.
Source: cited_works
Reference resolution
68 of 68 outbound references displayed
- verified exact0
- verified fuzzy56
- unresolved12
- parse uncertain0
- malformed identifier0
- metadata mismatch0
External citation measurements
No source-named external measurement is stored.
Outbound references
Observation b6783f55-d6fe-4f61-8a67-15db32acbe00 · outbound
This paper cites J.; Xia, Q.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering J.; Xia, Q
Reference 1
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.541845Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 99afb63c-993e-4dcb-9e82-63663e1848be · outbound
This paper cites J.; Kim, Y.; Hwang, C.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering J.; Kim, Y.; Hwang, C
Reference 2
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.532766Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation d4f76ee6-ea85-486d-a82d-f53316546870 · outbound
This paper cites an unresolved cited work.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Unresolved cited work
Reference 3
- Resolution
- unresolved
- raw_fallback, observed 2026-08-15T22:36:30.524127Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation d98d31aa-70ae-4ff5-94dd-d713f9827e1b · outbound
This paper cites an unresolved cited work.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Unresolved cited work
Reference 4
- Resolution
- unresolved
- no resolver link, observed 2026-08-15T22:36:29.731046Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation c2da3fa5-8bfc-4f1d-b029-6289037cb73e · outbound
This paper cites Nanoionic memristive phenomena in metal oxides: the valence change mechanism.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Nanoionic memristive phenomena in metal oxides: the valence change mechanism
Reference 5
- Resolution
- unresolved
- no resolver link, observed 2026-08-15T22:36:29.734527Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 30f7c9cf-fdff-4d70-b9df-89801cc95270 · outbound
This paper cites Forming voltage scaling of resistive switching memories.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Forming voltage scaling of resistive switching memories
Reference 6
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.505729Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 6e2c277d-2479-44a2-9313-6758df3cb1b9 · outbound
This paper cites B.; Lee, H.-D.; Kwon, H.-M.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering B.; Lee, H.-D.; Kwon, H.-M
Reference 7
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.497034Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 90359b60-7fe7-4263-a1ff-33daca50b190 · outbound
This paper cites The Effect of Plasma Treatment on Reducing Electroforming Voltage of Silicon Oxide RRAM.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering The Effect of Plasma Treatment on Reducing Electroforming Voltage of Silicon Oxide RRAM
Reference 8
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.488454Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 29329e0a-fa1b-44f0-a855-6182e5913d86 · outbound
This paper cites Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode
Reference 9
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.479328Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 7895bf49-fbaf-4e4f-8389-210c75cef372 · outbound
This paper cites Geometric conductive filament confinement by nanotips for resistive switching of HfO _2 -RRAM devices with high performance.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Geometric conductive filament confinement by nanotips for resistive switching of HfO _2 -RRAM devices with high performance
Reference 10
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.470091Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation c15cca47-0204-47c6-a599-1757184d42d8 · outbound
This paper cites Collective Control of Potential-Constrained Oxygen Vacancies in Oxide Heterostructures for Gradual Resistive Switching.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Collective Control of Potential-Constrained Oxygen Vacancies in Oxide Heterostructures for Gradual Resistive Switching
Reference 11
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.461187Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation c042cee7-ea14-409e-801c-cbf50c59eb95 · outbound
This paper cites Resistive Switching Acceleration Induced by Thermal Confinement.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Resistive Switching Acceleration Induced by Thermal Confinement
Reference 12
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.452478Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 26c6fbb0-19c6-4fe3-ba86-be9b268f67cf · outbound
This paper cites Improving Analog Switching in HfO _2 -Based Resistive Memory With a Thermal Enhanced Layer.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Improving Analog Switching in HfO _2 -Based Resistive Memory With a Thermal Enhanced Layer
Reference 13
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.444164Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 30f20bc6-ea77-4dd3-b85b-0043e47c67a2 · outbound
This paper cites an unresolved cited work.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Unresolved cited work
Reference 14
- Resolution
- unresolved
- raw_fallback, observed 2026-08-15T22:36:30.435784Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 2450a0c6-c10b-4d44-acb2-b06bb6a877cf · outbound
This paper cites Analog Nanoscale Electro-Optical Synapses for Neuromorphic Computing Applications.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Analog Nanoscale Electro-Optical Synapses for Neuromorphic Computing Applications
Reference 15
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.427827Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 2ee60057-1290-419e-a344-f7c8c1808912 · outbound
This paper cites J.; Qian, H.; Wu, H.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering J.; Qian, H.; Wu, H
Reference 16
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.419692Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation d2c27ab0-9ed3-4e9e-9816-b393946fd810 · outbound
This paper cites L.; Islam, M.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering L.; Islam, M
Reference 17
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.411718Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation c622e7f1-555b-4d06-accc-014a6bed661b · outbound
This paper cites An Atomistic Model of Field-Induced Resistive Switching in Valence Change Memory.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering An Atomistic Model of Field-Induced Resistive Switching in Valence Change Memory
Reference 18
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.403062Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation e767766b-b80f-4f8b-b7bf-cea52adc63bb · outbound
This paper cites S.; Williams, R.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering S.; Williams, R
Reference 19
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.394499Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 5a6686be-478b-4566-85c4-680d948ed94a · outbound
This paper cites Effect of electrode and oxide properties on the filament kinetics during electroforming in metal-oxide-based memories.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Effect of electrode and oxide properties on the filament kinetics during electroforming in metal-oxide-based memories
Reference 20
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.385706Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 0cf18ebb-e612-4dc9-92ab-422f49e86ba0 · outbound
This paper cites Insights into few-atom conductive bridging random access memory cells with a combined force-field/ab initio scheme.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Insights into few-atom conductive bridging random access memory cells with a combined force-field/ab initio scheme
Reference 21
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.377070Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 4930e2e3-b2f0-4df4-96dd-7aea1b1572b4 · outbound
This paper cites Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices
Reference 22
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.368363Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation d289dfb8-98c7-4cf1-885e-3c4da303cd6b · outbound
This paper cites Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory
Reference 23
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.359017Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 9119b922-b370-400c-ad07-c361ec17d69f · outbound
This paper cites P.; Shen, L.; Goodwill, J.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering P.; Shen, L.; Goodwill, J
Reference 24
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.350231Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 45350c2d-c2f0-40e0-a07c-56a009ede5f1 · outbound
This paper cites F.; Menzel, S.; Stecconi, T.; Porta, A.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering F.; Menzel, S.; Stecconi, T.; Porta, A
Reference 25
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.341697Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 849dfc5e-8682-4edd-999c-00ef161f63a8 · outbound
This paper cites J.; Carta, F.; Horst, F.; Falcone, D.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering J.; Carta, F.; Horst, F.; Falcone, D
Reference 26
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.332820Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 76cacb4f-9c72-4a27-856c-d991e58838cf · outbound
This paper cites J.; Bragaglia, V.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering J.; Bragaglia, V
Reference 27
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.323818Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 1d1b2708-6ca7-483d-ac12-cef786925dab · outbound
This paper cites Insights behind multi-level conductance transitions in HfO _x memristors.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Insights behind multi-level conductance transitions in HfO _x memristors
Reference 28
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.315222Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 6975dd36-1f47-4a3f-a672-eeca5bf10fb9 · outbound
This paper cites an unresolved cited work.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Unresolved cited work
Reference 29
- Resolution
- unresolved
- raw_fallback, observed 2026-08-15T22:36:30.306533Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 246f1615-92f0-4855-8fc5-c3acd78e47d4 · outbound
This paper cites 10x10nm Hf/HfO _2 crossbar resistive RAM with excellent performance, reliability and low-energy operation.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering 10x10nm Hf/HfO _2 crossbar resistive RAM with excellent performance, reliability and low-energy operation
Reference 30
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.297597Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 3a66aaea-9653-427a-95d5-ec6eac5b90e7 · outbound
This paper cites M.; Lin, C.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering M.; Lin, C
Reference 31
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.288538Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 3c1d90f4-712e-4755-ba77-fbd46658ca75 · outbound
This paper cites an unresolved cited work.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Unresolved cited work
Reference 32
- Resolution
- unresolved
- raw_fallback, observed 2026-08-15T22:36:30.279773Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation c99fcad9-1aac-4d17-a38f-b1217c076eba · outbound
This paper cites an unresolved cited work.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Unresolved cited work
Reference 33
- Resolution
- unresolved
- raw_fallback, observed 2026-08-15T22:36:30.270769Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation ecbfbecd-ae26-4e9c-9719-7c99c1a25c35 · outbound
This paper cites In-operando and non-destructive analysis of the resistive switching in the Ti/HfO _2 /TiN-based system by hard x-ray photoelectron spectroscopy.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering In-operando and non-destructive analysis of the resistive switching in the Ti/HfO _2 /TiN-based system by hard x-ray photoelectron spectroscopy
Reference 34
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.261902Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation db9a1761-5161-44be-972f-c321e2688f6c · outbound
This paper cites C.; Kirsch, P.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering C.; Kirsch, P
Reference 35
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.253715Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 191756ec-6cf4-44a0-a807-7fafa1851997 · outbound
This paper cites A.; Lodico, J.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering A.; Lodico, J
Reference 36
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.245592Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 0c51a575-fcfc-4c9c-b65b-7a47a00c2264 · outbound
This paper cites P.; Sohn, J.; Weng, B.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering P.; Sohn, J.; Weng, B
Reference 37
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.237594Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation fcc54fb1-ad54-45e9-b900-f6cde924237a · outbound
This paper cites Y.; Nagata, T.; Park, S.-G.; Magyari-K\" o pe, B.; Chikyow, T.; Yamada, K.; Niwa, M.; Nishi, Y.; Shiraishi, K.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Y.; Nagata, T.; Park, S.-G.; Magyari-K\" o pe, B.; Chikyow, T.; Yamada, K.; Niwa, M.; Nishi, Y.; Shiraishi, K
Reference 38
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.229125Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation d323aa86-bf56-4790-9a37-860287d83d28 · outbound
This paper cites an unresolved cited work.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Unresolved cited work
Reference 39
- Resolution
- unresolved
- raw_fallback, observed 2026-08-15T22:36:30.220325Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation d3a1742d-202e-4bd3-9a88-ff9c8bca045a · outbound
This paper cites Y.; Degraeve, R.; Mees, M.; Sankaran, K.; Govoreanu, B.; Jurczak, M.; De Gendt, S.; Pourtois, G.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Y.; Degraeve, R.; Mees, M.; Sankaran, K.; Govoreanu, B.; Jurczak, M.; De Gendt, S.; Pourtois, G
Reference 40
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.211323Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation b01ac73d-5a4f-4a73-beba-edda90fe31d4 · outbound
This paper cites A Comparative Study on the Diffusion Behaviors of Metal and Oxygen Ions in Metal-Oxide-Based Resistance Switches via ab Initio Molecular Dynamics Simulations.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering A Comparative Study on the Diffusion Behaviors of Metal and Oxygen Ions in Metal-Oxide-Based Resistance Switches via ab Initio Molecular Dynamics Simulations
Reference 41
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.202198Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 6a2d3fb0-66c5-4d78-8612-ae3817e6e494 · outbound
This paper cites Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics
Reference 42
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.192193Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation b7b03816-5b09-4da0-b812-c83f88468bf0 · outbound
This paper cites Investigation of the electroforming process in resistively switching TiO _2 nanocrosspoint junctions.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Investigation of the electroforming process in resistively switching TiO _2 nanocrosspoint junctions
Reference 43
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.183342Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 86ca9590-54a6-4e1b-bc27-cf9cf153e0e1 · outbound
This paper cites An Electrical Characterisation Methodology for Benchmarking Memristive Device Technologies.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering An Electrical Characterisation Methodology for Benchmarking Memristive Device Technologies
Reference 44
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.174448Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation e954768b-dbc9-4c44-8b56-298e685f9f16 · outbound
This paper cites Dielectric properties of hafnium oxide film prepared by HiPIMS at different O _2 /Ar ratios and their influences on TFT performance.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Dielectric properties of hafnium oxide film prepared by HiPIMS at different O _2 /Ar ratios and their influences on TFT performance
Reference 45
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.165960Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation fc462c6e-f95f-439e-8062-ba477f2a1d5f · outbound
This paper cites U.; Bertaud, T.; Kurian, J.; Hildebrandt, E.; Walczyk, C.; Calka, P.; Zaumseil, P.; Sowinska, M.; Walczyk, D.; Gloskovskii, A.; Schroeder, T.; Alff, L.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering U.; Bertaud, T.; Kurian, J.; Hildebrandt, E.; Walczyk, C.; Calka, P.; Zaumseil, P.; Sowinska, M.; Walczyk, D.; Gloskovskii, A.; Schroeder, T.; Alff, L
Reference 46
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.157180Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 7ed97bd6-9371-48f2-9547-81d1b8ead095 · outbound
This paper cites U.; Kurian, J.; Komissinskiy, P.; Hildebrandt, E.; Bertaud, T.; Walczyk, C.; Calka, P.; Schroeder, T.; Alff, L.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering U.; Kurian, J.; Komissinskiy, P.; Hildebrandt, E.; Bertaud, T.; Walczyk, C.; Calka, P.; Schroeder, T.; Alff, L
Reference 47
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.148234Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation f7f99214-61b8-4e0e-a7a3-d986de9f721d · outbound
This paper cites V.; Taguchi, M.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering V.; Taguchi, M
Reference 48
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.140067Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation b235c7ac-b627-44ac-90da-892eb80aecf2 · outbound
This paper cites P.; Molina‐Luna, L.; Alff, L.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering P.; Molina‐Luna, L.; Alff, L
Reference 49
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.131785Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 3b1c57be-7b2c-4a61-b998-0d466eef871e · outbound
This paper cites U.; Vogel, T.; Major, M.; McKenna, K.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering U.; Vogel, T.; Major, M.; McKenna, K
Reference 50
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.123184Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 1ccea759-a2a1-4690-a8e6-46778d9793e7 · outbound
This paper cites Oxygen Vacancy Engineering and Its Impact on Resistive Switching of Oxide Thin Films for Memory and Neuromorphic Applications.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Oxygen Vacancy Engineering and Its Impact on Resistive Switching of Oxide Thin Films for Memory and Neuromorphic Applications
Reference 51
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.114465Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation ac24600b-2ce4-4227-8f9b-2819f3283591 · outbound
This paper cites P.; Vine, D.; Kilcoyne, A.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering P.; Vine, D.; Kilcoyne, A
Reference 52
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.105339Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation f03a300c-d05e-4dec-8393-673cb30184a3 · outbound
This paper cites Effect of the voltage ramp rate on the set and reset voltages of ReRAM devices.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Effect of the voltage ramp rate on the set and reset voltages of ReRAM devices
Reference 53
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.096218Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 24123303-0c8a-4df9-9260-610098578305 · outbound
This paper cites A thorough investigation of the progressive reset dynamics in HfO _2 -based resistive switching structures.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering A thorough investigation of the progressive reset dynamics in HfO _2 -based resistive switching structures
Reference 54
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.087581Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 3f85f9cc-a4a8-4013-96a6-7b2d5a58940d · outbound
This paper cites Rapid Prediction of RRAM RESET-State Disturb by Ramped Voltage Stress.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Rapid Prediction of RRAM RESET-State Disturb by Ramped Voltage Stress
Reference 55
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.078571Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 945d59bc-24f3-4ca5-908c-a41dddbfa7c4 · outbound
This paper cites an unresolved cited work.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Unresolved cited work
Reference 56
- Resolution
- unresolved
- raw_fallback, observed 2026-08-15T22:36:30.069109Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 7aafd729-d41b-418b-855e-346dc8672e0d · outbound
This paper cites M.; Liu, H.-W.; Chen, P.-H.; Chang, T.-C.; Tsai, T.-M.; Chu, T.-J.; Pan, C.-H.; Wu, C.-H.; Yang, C.-C.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering M.; Liu, H.-W.; Chen, P.-H.; Chang, T.-C.; Tsai, T.-M.; Chu, T.-J.; Pan, C.-H.; Wu, C.-H.; Yang, C.-C
Reference 57
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.059442Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation ec952f7d-f297-4f52-a654-f4dbe9679183 · outbound
This paper cites J.; Gerstner, W.; Luisier, M.; Emboras, A.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering J.; Gerstner, W.; Luisier, M.; Emboras, A
Reference 58
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.049173Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 2f1724cc-8d61-44a7-b9ad-0e3bae35da77 · outbound
This paper cites LEPTOS: a universal software for x-ray reflectivity and diffraction.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering LEPTOS: a universal software for x-ray reflectivity and diffraction
Reference 59
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.039864Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation a4cb35da-11ca-468d-ad0f-ef42c3a02389 · outbound
This paper cites an unresolved cited work.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Unresolved cited work
Reference 60
- Resolution
- unresolved
- raw_fallback, observed 2026-08-15T22:36:30.029761Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 25ad029e-c20f-48fd-8163-87c04b8584fc · outbound
This paper cites u hne, T. D.; Iannuzzi, M.; Ben, M. D.; Rybkin, V. V.; Seewald, P.; Stein, F.; Laino, T.; Khaliullin, R. Z.; Sch\.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering u hne, T. D.; Iannuzzi, M.; Ben, M. D.; Rybkin, V. V.; Seewald, P.; Stein, F.; Laino, T.; Khaliullin, R. Z.; Sch\
Reference 61
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.020155Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation b5352c45-9396-433a-9f27-c361396723e6 · outbound
This paper cites P.; Burke, K.; Ernzerhof, M.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering P.; Burke, K.; Ernzerhof, M
Reference 62
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:30.010565Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 221e9a54-6122-4d91-8d77-755293c65bda · outbound
This paper cites Gaussian basis sets for accurate calculations on molecular systems in gas and condensed phases.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Gaussian basis sets for accurate calculations on molecular systems in gas and condensed phases
Reference 63
- Resolution
- unresolved
- no resolver link, observed 2026-08-15T22:36:29.908683Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation cc31d67a-9ec5-4687-a057-5c6177384543 · outbound
This paper cites J.; Waser, R.; Schneider, C.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering J.; Waser, R.; Schneider, C
Reference 64
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:29.995330Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 89f18a76-17e2-4951-a1e6-56b44d8835fb · outbound
This paper cites Electro-Thermal Transport in Disordered Nanostructures: a Modeling Perspective.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Electro-Thermal Transport in Disordered Nanostructures: a Modeling Perspective
Reference 65
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:29.986162Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 4da5ea9d-06a3-4d26-b9ae-f2e5eaceb644 · outbound
This paper cites Temperature Dependent Thermal Properties of Thin Film Hafnium Oxide.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Temperature Dependent Thermal Properties of Thin Film Hafnium Oxide
Reference 66
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:29.976408Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 5bc86c0f-dc31-47ba-b799-9e07b696d7b7 · outbound
This paper cites W.; McIntyre, P.; Goodson, K.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering W.; McIntyre, P.; Goodson, K
Reference 67
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T22:36:29.965960Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.
Observation 442b4b59-ed6b-4ed1-938b-b7f49428e805 · outbound
This paper cites Improving equilibrium propagation without weight symmetry through Jacobian homeostasis.
Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering Improving equilibrium propagation without weight symmetry through Jacobian homeostasis
Reference 68
- Resolution
- unresolved
- no resolver link, observed 2026-08-15T22:36:29.924293Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Pith citing papers
No inbound Pith citation observations are available.