Paper Citation Record · LEDGER

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector

As of 15 August 2026, this Paper Citation Record lists 26 of 26 outbound references and 0 inbound Pith citation observations for arXiv:2505.21902.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2505.21902 v1

Coverage vector

measured 26 of 26 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-07T13:22:55.001591Z

measured 26 of 26 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-15T06:32:42.880941+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

26 of 26 outbound references displayed

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External citation measurements

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Outbound references

Observation 796e7542-f28b-4b9f-85af-fb24cbe5681e · outbound

This paper cites New materials for radiation hard semiconductor dectectors,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector New materials for radiation hard semiconductor dectectors,

Reference 1

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:59.414133Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation d797319e-08d5-4830-912d-2341e6ff08fd · outbound

This paper cites Silicon carbide and its use as a radiation detector material,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector Silicon carbide and its use as a radiation detector material,

Reference 2

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:59.286286Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 77349269-eb35-4481-a54b-2595952a8cf0 · outbound

This paper cites In situ localized growth of porous tin oxide films on low power microheater platform for low temperature co detection,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector In situ localized growth of porous tin oxide films on low power microheater platform for low temperature co detection,

Reference 3

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:59.095615Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 63b98dfb-6ee8-4706-9a66-df1c602dd164 · outbound

This paper cites Charge collection efficiency study on neutron-irradiated planar silicon carbide diodes via UV-TCT,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector Charge collection efficiency study on neutron-irradiated planar silicon carbide diodes via UV-TCT,

Reference 4

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:58.854147Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation f281cdcc-d3c7-447a-a0e0-e9f17abf2baa · outbound

This paper cites Electrical Properties and Gain Performance of 4H- SiC LGAD (SICAR),.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector Electrical Properties and Gain Performance of 4H- SiC LGAD (SICAR),

Reference 5

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:58.608729Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 7ff671a4-0291-437b-9f7f-6c34e2b3c2ae · outbound

This paper cites SiC detectors: A review on the use of silicon carbide as radiation detection material,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector SiC detectors: A review on the use of silicon carbide as radiation detection material,

Reference 6

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:58.448162Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 6d25cff0-aaa0-4cf9-89e3-35a9f3a05724 · outbound

This paper cites Position-resolved charge collection of silicon carbide detectors with an epitaxially-grown graphene layer,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector Position-resolved charge collection of silicon carbide detectors with an epitaxially-grown graphene layer,

Reference 7

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:58.326710Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 8660110c-7ea3-4c01-b6d0-07303f5fe96d · outbound

This paper cites Enhanced ohmic contact via graphitization of polycrystalline silicon carbide,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector Enhanced ohmic contact via graphitization of polycrystalline silicon carbide,

Reference 8

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:58.191807Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 63047451-a0fa-4e12-abce-31f22fffdbb9 · outbound

This paper cites Strong hole-doping and robust resistance-decrease in proton-irradiated graphene,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector Strong hole-doping and robust resistance-decrease in proton-irradiated graphene,

Reference 9

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:58.053079Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 14d67683-0887-4980-a481-f464954f5958 · outbound

This paper cites Monolithic Integration of Graphene in SiC Radiation Sensors for Harsh-Environment Applica- tions,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector Monolithic Integration of Graphene in SiC Radiation Sensors for Harsh-Environment Applica- tions,

Reference 10

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:57.895373Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 598203b4-9e06-4af3-9df6-c45b575fd994 · outbound

This paper cites Negative fermi-level pinning effect of metal/n- gaas(001) junction induced by a graphene interlayer,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector Negative fermi-level pinning effect of metal/n- gaas(001) junction induced by a graphene interlayer,

Reference 11

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:57.782354Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 24cff850-5f43-4ea2-ab95-7d3d3331f9bc · outbound

This paper cites Effect of an intermediate graphite layer on the electronic properties of metal/sic contacts,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector Effect of an intermediate graphite layer on the electronic properties of metal/sic contacts,

Reference 12

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:57.646353Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 0b578b8e-7b98-4065-abdd-64f8b327c00b · outbound

This paper cites Improved performance of sic radiation detectors due to optimized ohmic contact electrode by graphene insertion,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector Improved performance of sic radiation detectors due to optimized ohmic contact electrode by graphene insertion,

Reference 13

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:57.550505Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 3de82efc-87bb-4478-8143-f481d2b5e759 · outbound

This paper cites Graphene Ohmic Contacts to n-type Silicon Carbide (0001),.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector Graphene Ohmic Contacts to n-type Silicon Carbide (0001),

Reference 14

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:57.413740Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 61f20f6e-54ca-4fad-97cc-929f94bf6a0e · outbound

This paper cites Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide,

Reference 15

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:57.263402Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 9ad1fa32-ea96-49db-b4c4-dc43d1801fc8 · outbound

This paper cites Position-resolved charge collection of silicon carbide detectors with an epitaxially-grown graphene layer,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector Position-resolved charge collection of silicon carbide detectors with an epitaxially-grown graphene layer,

Reference 16

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:57.162472Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation cbc753be-1456-4a80-a403-bb3b5ae09cfd · outbound

This paper cites H, Study on Charge Collection Properties of New 3D-Trench electrode Si Detector.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector H, Study on Charge Collection Properties of New 3D-Trench electrode Si Detector

Reference 17

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:57.059457Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 86307d94-f964-4cfa-8592-310f67be1173 · outbound

This paper cites Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors,

Reference 18

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:56.974314Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation f2ff0454-d7aa-4200-9d67-ca4abfcd1030 · outbound

This paper cites High Resolution 4H-SiC p-i-n Radiation Detectors With Low-V oltage Operation,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector High Resolution 4H-SiC p-i-n Radiation Detectors With Low-V oltage Operation,

Reference 19

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:56.875339Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation c121e1e1-b91f-40cc-a0b3-25a78b7edde9 · outbound

This paper cites Interpretation of raman spectra of dis- ordered and amorphous carbon,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector Interpretation of raman spectra of dis- ordered and amorphous carbon,

Reference 20

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:56.830171Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 2f33df46-d44d-45d3-bee1-4e76255ed88a · outbound

This paper cites Effect of He ion irradiation on microstruc- ture and electrical properties of graphene,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector Effect of He ion irradiation on microstruc- ture and electrical properties of graphene,

Reference 21

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:56.644470Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 4ec26daf-84ca-44af-b654-f3e36609a226 · outbound

This paper cites Raman spectroscopy of graphene,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector Raman spectroscopy of graphene,

Reference 22

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:56.476625Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 8dc0099a-2388-4535-9d7a-5def73b87a13 · outbound

This paper cites Hysteresis of electronic transport in graphene transistors,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector Hysteresis of electronic transport in graphene transistors,

Reference 23

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:56.155044Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation d9963716-8572-4404-915a-72f282a9f59f · outbound

This paper cites Progress in the study of irradiation effects of graphene and graphene field effect transistors,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector Progress in the study of irradiation effects of graphene and graphene field effect transistors,

Reference 24

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:55.846865Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation 1c43ae0e-2d0b-431c-b53a-85d30489cde8 · outbound

This paper cites Electrical Characterization of 5 MeV Proton-Irradiated Few Layer Graphene,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector Electrical Characterization of 5 MeV Proton-Irradiated Few Layer Graphene,

Reference 25

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:55.525745Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Observation fa50135c-73ea-4791-9867-54144e15fac0 · outbound

This paper cites Radiation Effects in Advanced Semiconduc- tor Materials and Devices,.

Rise Time and Charge Collection Efficiency of Graphene-Optimized 4H-SiC PIN Detector Radiation Effects in Advanced Semiconduc- tor Materials and Devices,

Reference 26

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T13:22:55.257430Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.

Pith citing papers

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