Paper Citation Record · LEDGER

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells

As of 23 August 2026, this Paper Citation Record lists 37 of 37 outbound references and 0 inbound Pith citation observations for arXiv:2507.00318.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2507.00318 v1

Coverage vector

measured 37 of 37 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-06T21:27:07.157058Z

measured 37 of 37 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-23T06:30:58.430688+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

37 of 37 outbound references displayed

verified exact0
verified fuzzy28
unresolved8
parse uncertain0
malformed identifier0
metadata mismatch1

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation beac219b-712a-4c7e-981b-4721f8e4f1aa · outbound

This paper cites Non-volatile resistive switching for advanced memory applications.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Non-volatile resistive switching for advanced memory applications

Reference 1

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.524332Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation f1f965c4-d9fa-487d-9a00-737af56d5be1 · outbound

This paper cites G.; Kim, D.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells G.; Kim, D

Reference 2

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.517161Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 3f868b5d-4331-4b75-a97d-e0725f095cc5 · outbound

This paper cites Y.; Kang, J.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Y.; Kang, J

Reference 3

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.509434Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 06d95153-43c5-4ab2-ae71-7af4a9a0186a · outbound

This paper cites J.; Dananjaya, P.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells J.; Dananjaya, P

Reference 4

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.501436Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 146635c4-be2a-4a9d-8954-c83332d679f0 · outbound

This paper cites an unresolved cited work.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Unresolved cited work

Reference 5

Resolution: unresolved; raw_fallback, observed 2026-08-06T21:27:07.494027Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 8dffa3a5-e9fd-4611-a338-07d43ecaca82 · outbound

This paper cites Low Power and High Speed Switching of Ti-Doped NiO ReRAM Under the Unipolar Voltage Source of Less than 3; V; 2007 IEEE International Electron Devices Meeting, 2007.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Low Power and High Speed Switching of Ti-Doped NiO ReRAM Under the Unipolar Voltage Source of Less than 3; V; 2007 IEEE International Electron Devices Meeting, 2007

Reference 6

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.486795Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 06262178-db70-490a-84f1-757f1d92375f · outbound

This paper cites an unresolved cited work.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Unresolved cited work

Reference 7

Resolution: unresolved; raw_fallback, observed 2026-08-06T21:27:07.479446Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation db68c03d-64e4-481b-a4c5-587cff10d294 · outbound

This paper cites Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications

Reference 8

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.471860Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation a894910b-52d2-4b24-abb7-4b688723b8b1 · outbound

This paper cites E.; Menzel, S.; Waser, R.; Dittmann, R.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells E.; Menzel, S.; Waser, R.; Dittmann, R

Reference 9

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.464236Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 3e5979a7-93c1-4064-8917-5505a5879165 · outbound

This paper cites N.; Zellweger, T.; others Single neuromorphic memristor closely emulates multiple synaptic mechanisms for energy efficient neural networks.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells N.; Zellweger, T.; others Single neuromorphic memristor closely emulates multiple synaptic mechanisms for energy efficient neural networks

Reference 10

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.456979Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 2755d349-49b5-42ed-a0af-975b962e114b · outbound

This paper cites Asymmetric Resistive Switching Effect in Au/Nb:SrTiO _3 Schottky Junctions.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Asymmetric Resistive Switching Effect in Au/Nb:SrTiO _3 Schottky Junctions

Reference 11

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.449444Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 008af78d-f94f-45b1-9bdb-1218c61f611b · outbound

This paper cites Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO _3 Thin-Film Memristive Devices.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO _3 Thin-Film Memristive Devices

Reference 12

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.442440Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 8e2b0690-4674-489e-9124-11cfd80a181a · outbound

This paper cites B.; Tan, Z.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells B.; Tan, Z

Reference 13

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.435301Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation fc938418-f481-47bd-b15f-7156c6cf68aa · outbound

This paper cites an unresolved cited work.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Unresolved cited work

Reference 14

Resolution: unresolved; raw_fallback, observed 2026-08-06T21:27:07.428413Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 775cdcc7-730e-40a7-a6fc-4645be41db7d · outbound

This paper cites V.; Wang, J.; Wu, T.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells V.; Wang, J.; Wu, T

Reference 15

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.421075Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation dc95cad5-101e-4e75-89ae-9c3d1a62445c · outbound

This paper cites Nanoscale Res Lett 2011, 6, 599.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Nanoscale Res Lett 2011, 6, 599

Reference 16

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.412755Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation c338c045-1358-496e-876e-0527dc94203c · outbound

This paper cites G.; Ma, X.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells G.; Ma, X

Reference 17

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.405621Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation b31187de-99d7-4410-be9c-8d747bf64f97 · outbound

This paper cites Understanding of the switching mechanism of a Pt/Ni-doped SrTiO _3 junction via current-voltage and capacitance-voltage measurements.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Understanding of the switching mechanism of a Pt/Ni-doped SrTiO _3 junction via current-voltage and capacitance-voltage measurements

Reference 18

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.397986Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 2733355e-2c5c-43aa-ac63-2943f5545596 · outbound

This paper cites M.; Klemradt, U.; Waser, R.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells M.; Klemradt, U.; Waser, R

Reference 19

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.389676Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 0c0b48b9-4e68-4bd5-864c-7be59c1b8a83 · outbound

This paper cites an unresolved cited work.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Unresolved cited work

Reference 20

Resolution: unresolved; raw_fallback, observed 2026-08-06T21:27:07.382834Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 71954d50-b9f2-4ba9-9da6-29bb27b7e837 · outbound

This paper cites D.; Iannuzzi, M.; Ben, M.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells D.; Iannuzzi, M.; Ben, M

Reference 21

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.374965Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 40f4829c-1f49-436e-ac1d-beb76f5d1e24 · outbound

This paper cites A Practical Guide to Surface Kinetic Monte Carlo Simulations.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells A Practical Guide to Surface Kinetic Monte Carlo Simulations

Reference 22

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.367892Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation a7c030da-f61c-43a9-8147-febed43ec0f6 · outbound

This paper cites Atomistic Simulation of Nanowires in the sp3d5s Tight-Binding Formalism: From Boundary Conditions to Strain Calculations.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Atomistic Simulation of Nanowires in the sp3d5s Tight-Binding Formalism: From Boundary Conditions to Strain Calculations

Reference 23

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.360459Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 3a81eea0-8723-4845-a96d-e687b7da5bf6 · outbound

This paper cites Gaussian basis sets for accurate calculations on molecular systems in gas and condensed phases.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Gaussian basis sets for accurate calculations on molecular systems in gas and condensed phases

Reference 24

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.353149Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 1f48dae3-85c0-4b91-bf44-86e09b1f3404 · outbound

This paper cites P.; Burke, K.; Ernzerhof, M.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells P.; Burke, K.; Ernzerhof, M

Reference 25

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.345852Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation c2cd067e-1562-414c-aee1-2fd4c45e04e8 · outbound

This paper cites P.; Jónsson, H.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells P.; Jónsson, H

Reference 26

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.338051Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation a24eedca-f23f-47a7-bbf5-c93b0378eb64 · outbound

This paper cites I.; Zaanen, J.; Andersen, O.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells I.; Zaanen, J.; Andersen, O

Reference 27

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.331029Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 97200fdc-d119-4376-886b-1c096d5c5186 · outbound

This paper cites an unresolved cited work.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Unresolved cited work

Reference 28

Resolution: unresolved; raw_fallback, observed 2026-08-06T21:27:07.323494Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 4d2a51fc-9779-432e-bf11-97818f754156 · outbound

This paper cites an unresolved cited work.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Unresolved cited work

Reference 29

Resolution: unresolved; raw_fallback, observed 2026-08-06T21:27:07.316439Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 33923f01-54a6-45f9-aba0-adc6152cc397 · outbound

This paper cites Schottky barrier formation at the Fe/SrTiO _3 (001) interface: Influence of oxygen vacancies and layer oxidation.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Schottky barrier formation at the Fe/SrTiO _3 (001) interface: Influence of oxygen vacancies and layer oxidation

Reference 30

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.309529Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 85dc9c3a-3240-43a0-a043-713318843c0d · outbound

This paper cites Understanding the interplay of surface structure and work function in oxides: A case study on SrTiO _3.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Understanding the interplay of surface structure and work function in oxides: A case study on SrTiO _3

Reference 31

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.302117Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation ae4810a3-e957-44d3-8429-d5571a0565ae · outbound

This paper cites Impact of the cation-stoichiometry on the resistive switching and data retention of SrTiO _3 thin films.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Impact of the cation-stoichiometry on the resistive switching and data retention of SrTiO _3 thin films

Reference 32

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.293744Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 3bf3e597-efb1-49b2-900b-4bd287699c28 · outbound

This paper cites an unresolved cited work.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Unresolved cited work

Reference 33

Resolution: unresolved; raw_fallback, observed 2026-08-06T21:27:07.285559Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation cc916c70-2bfc-41ad-9268-168edb860f25 · outbound

This paper cites An Atomistic Model of Field-Induced Resistive Switching in Valence Change Memory.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells An Atomistic Model of Field-Induced Resistive Switching in Valence Change Memory

Reference 34

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.277576Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation faf4d2f1-1e93-4031-82a6-9e381a962c00 · outbound

This paper cites Nanoionic memristive phenomena in metal oxides: the valence change mechanism.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Nanoionic memristive phenomena in metal oxides: the valence change mechanism

Reference 35

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T21:27:07.269731Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation b90a85a7-4b34-4c51-9579-8ac2ee056f8a · outbound

This paper cites an unresolved cited work.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Unresolved cited work

Reference 36

Resolution: unresolved; raw_fallback, observed 2026-08-06T21:27:07.261083Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Observation 4df5f614-78d2-485d-9c07-455fe2ccce2c · outbound

This paper cites Gaussian basis sets for accurate calculations on molecular systems in gas and condensed phases.

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells Gaussian basis sets for accurate calculations on molecular systems in gas and condensed phases

Reference 37

Resolution: metadata mismatch; raw_fallback, observed 2026-08-06T21:27:07.252139Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-23T06:30:58.430688+00:00.

Pith citing papers

No inbound Pith citation observations are available.