pith. sign in

arxiv: 2604.08637 · v1 · submitted 2026-04-09 · ⚛️ physics.optics

Increased endurance of nonvolatile photonics enabled by nanostructured phase-change materials

Jayita Dutta , Andrew Tang , Brian Mills , Rui Chen , Arnab Manna , Gokul Nath SJ , Virat Tara , Dennis Callahan
show 3 more authors
Cosmin Constantin Popescu Juejun Hu Arka Majumdar
This is my paper

Pith reviewed 2026-05-10 17:19 UTC · model grok-4.3

classification ⚛️ physics.optics
keywords phase change materialsphotonic devicesnonvolatile opticssilicon photonicsoptical lossendurance testingSb2Se3nanostructuring
0
0 comments X

The pith

Nanostructuring phase-change materials on silicon waveguides reduces loss by 94% and endurance exceeds 100 million cycles

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper demonstrates that simple geometric changes to phase-change material segments—tapering their ends and dividing them into segments—dramatically lower optical losses and increase the number of switching cycles in photonic devices. This addresses the problems of high insertion loss from scattering at material interfaces and limited endurance from large volumes that need to be heated and cooled. The resulting devices show losses as low as 0.1 dB per phase shift, modulation depths around 70%, operation below 5 volts, and endurance over 100 million cycles. These gains matter because they move PCM photonics closer to use in energy-efficient, reconfigurable optical circuits for computing.

Core claim

Tapering both ends of a wide bandgap PCM Sb2Se3 segment on a silicon waveguide suppresses insertion loss by approximately 94 percent to 0.1 dB per π phase shift. Combining tapering with segmentation yields approximately 70 percent optical modulation amplitude, 0.5 dB loss per π phase shift, actuation voltages below 5 V, and endurance greater than 100 million cycles.

What carries the argument

Geometric tapering and segmentation of the Sb2Se3 phase-change material segment, which reduces electromagnetic scattering at the PCM-silicon interface and the volume of material that must undergo phase transitions.

If this is right

  • Low-loss, high-endurance non-volatile phase shifters can be integrated into larger photonic circuits without excessive power or signal degradation.
  • The devices support repeated reconfiguration for in-memory computing applications at low voltages.
  • The approach confirms that interface scattering and programming volume are key limiting factors in prior PCM photonic devices.
  • High cyclability enables practical use in applications requiring frequent state changes without material fatigue.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • The same nanostructuring principles may apply to other phase-change material systems or waveguide platforms to improve performance.
  • Further optimization of segment dimensions could yield even lower losses or higher modulation depths.
  • This geometric method provides a fabrication-friendly route to scalable non-volatile photonic memories and switches.

Load-bearing premise

Electromagnetic scattering at the PCM-silicon interface and the size of the programming volume are the main sources of high insertion loss and poor endurance, and that tapering and segmentation eliminate these issues without creating new problems like fabrication defects.

What would settle it

A device fabricated with the same tapering and segmentation but showing insertion loss above 0.5 dB per π phase shift or endurance below 10 million cycles would indicate that other factors are at play or that the geometry does not reliably solve the problems.

read the original abstract

The rapid rise of artificial intelligence, and in-memory computing has reinvigorated research on scalable, energy-efficient, and reconfigurable photonic hardware. Non-volatile phase-change materials (PCMs) are attractive, as they offer large refractive index contrast, wavelength-scale footprints, and zero static power consumption. However, current PCM-based electrically controlled photonic devices are plagued by high insertion loss and low endurance. One prevalent hypothesis for these material limitations come from electromagnetic scattering in the interface and large programming volumes, respectively. Here, we validate this hypothesis by showing that nano-structuring of PCM minimizes optical loss and enhances the endurance. By tapering both ends of a wide bandgap PCM Sb2Se3 segment on a silicon waveguide, we suppressed the insertion loss by ~94% (resulting in a loss of ~0.1 dB per {\pi} phase shift). Through combining tapering and segmentation, we achieved high optical modulation amplitude (~70%), low loss (~0.5 dB per {\pi} phase shift), low-voltage (< 5V) actuation, and record high endurance greater than 100 million cycles. This work showcases the substantial advantage of nanopatterning PCMs to attain low loss and high cyclability.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 3 minor

Summary. The manuscript reports that nanostructuring Sb2Se3 phase-change material on silicon waveguides via tapering and segmentation reduces insertion loss by ~94% (to ~0.1 dB per π phase shift), achieves ~70% optical modulation amplitude, ~0.5 dB loss per π, <5 V actuation, and endurance exceeding 100 million cycles. This is presented as experimental validation that electromagnetic scattering at the PCM-silicon interface and large programming volumes are the dominant limits on loss and cyclability in electrically controlled nonvolatile photonic devices.

Significance. If substantiated, the geometric approach offers a practical route to low-loss, high-endurance nonvolatile phase shifters suitable for scalable photonic AI hardware and in-memory computing. The direct tapered-vs-untapered and segmented-vs-unsegmented comparisons, together with transmission spectra and repeated electrical cycling with optical readout, provide concrete evidence supporting the hypothesis without requiring new materials or complex processing.

major comments (2)
  1. Results section on loss quantification: the 94% reduction and final ~0.1 dB/π value are central to the hypothesis validation, yet the manuscript must include error bars, number of devices measured, and statistical analysis of the transmission spectra to confirm the improvement is not within device-to-device variation.
  2. Endurance testing subsection: the >100-million-cycle claim is load-bearing for the title and abstract; the manuscript should explicitly state the pulsing parameters, failure criterion (e.g., modulation amplitude drop threshold), and any observed degradation mechanisms to allow independent assessment of the record endurance.
minor comments (3)
  1. Abstract: the clause 'One prevalent hypothesis for these material limitations come from' contains a subject-verb agreement error ('come' should be 'comes').
  2. Abstract and figure captions: LaTeX artifacts such as 'per {π} phase shift' and 'per {π}' should be rendered as proper Greek symbols in the final manuscript.
  3. Methods: fabrication and measurement protocols are referenced but lack sufficient detail (e.g., exact taper dimensions, segmentation pitch, and electrical contact geometry) for full reproducibility; these belong in the main text or supplementary information.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for their constructive feedback and recommendation for minor revision. We address each major comment below and will update the manuscript to incorporate the requested details.

read point-by-point responses

  1. Referee: Results section on loss quantification: the 94% reduction and final ~0.1 dB/π value are central to the hypothesis validation, yet the manuscript must include error bars, number of devices measured, and statistical analysis of the transmission spectra to confirm the improvement is not within device-to-device variation.

    Authors: We agree that error bars, the number of devices measured, and statistical analysis of the transmission spectra are necessary to substantiate the reported loss reduction. In the revised manuscript we will add error bars to the ~0.1 dB/π loss values, state the number of devices characterized, and include a brief statistical comparison demonstrating that the improvement lies outside measured device-to-device variation. revision: yes

  2. Referee: Endurance testing subsection: the >100-million-cycle claim is load-bearing for the title and abstract; the manuscript should explicitly state the pulsing parameters, failure criterion (e.g., modulation amplitude drop threshold), and any observed degradation mechanisms to allow independent assessment of the record endurance.

    Authors: We acknowledge that explicit details on the endurance protocol are required for independent verification. In the revised manuscript we will expand the endurance subsection to report the exact pulsing parameters (voltage, duration, and repetition rate), the failure criterion (modulation-amplitude threshold), and any observed degradation mechanisms over the >100 million cycles. revision: yes

Circularity Check

0 steps flagged

No significant circularity; experimental claims rest on direct measurements

full rationale

The manuscript is an experimental validation study. It tests the hypothesis that interface scattering and large programming volumes limit PCM device performance by fabricating and measuring tapered/segmented Sb2Se3 devices versus controls, reporting insertion loss, modulation depth, voltage, and endurance (>10^8 cycles) from transmission spectra and repeated electrical-optical cycling. No equations, derivations, fitted parameters renamed as predictions, or load-bearing self-citations appear in the provided text or abstract. All performance numbers are obtained from physical devices and direct comparisons, rendering the central claims independent of any internal definitional loop.

Axiom & Free-Parameter Ledger

0 free parameters · 2 axioms · 0 invented entities

Based solely on the abstract, the work relies on standard assumptions of silicon photonics and PCM index contrast without introducing new free parameters, axioms beyond domain norms, or invented entities.

axioms (2)
  • standard math Silicon waveguides support low-loss propagation at the operating wavelengths
    Implicit in all silicon-photonic device claims.
  • domain assumption Sb2Se3 exhibits large refractive-index contrast between amorphous and crystalline states
    Core property enabling phase-change modulation.

pith-pipeline@v0.9.0 · 5550 in / 1300 out tokens · 61932 ms · 2026-05-10T17:19:24.375194+00:00 · methodology

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.

Reference graph

Works this paper leans on

91 extracted references · 91 canonical work pages

  1. [1]

    D. V . Christensen, R. Dittmann, B. Linares-Barranco, A. Sebastian, M. Le Gallo, A. Redaelli, S. Slesazeck, T. Mikolajick, S. Spiga, S. Menzel, I. Valov, G. Milano, C. Ricciardi, S.-J. Liang, F. Miao, M. Lanza, T. J. Quill, S. T. Keene, A. Salleo, J. Grollier, D. Marković, A. Mizrahi, P. Yao, J. J. Yang, G. Indiveri, J. P. Strachan, S. Datta, E. Vianello,...

    work page 2022

  2. [2]

    S. S. Gill, M. Xu, C. Ottaviani, P. Patros, R. Bahsoon, A. Shaghaghi, M. Golec, V . Stankovski, H. Wu, A. Abraham, M. Singh, H. Mehta, S. K. Ghosh, T. Baker, A. K. Parlikad, H. Lutfiyya, S. S. Kanhere, R. Sakellariou, S. Dustdar, O. Rana, I. Brandic, S. Uh lig, Internet of Things 2022, 19, 100514

    work page 2022

  3. [3]

    A. H. Kelechi, M. H. Alsharif, O. J. Bameyi, P. J. Ezra, I. K. Joseph, A. -A. Atayero, Z. W. Geem, J. Hong, Symmetry 2020, 12, 1029

    work page 2020

  4. [4]

    I. L. Markov, Nature 2014, 512, 147

    work page 2014

  5. [5]

    Mayer, H.-A

    R. Mayer, H.-A. Jacobsen, ACM Comput. Surv. 2020, 53, 3:1

    work page 2020

  6. [6]

    S. Zhu, T. Yu, T. Xu, H. Chen, S. Dustdar, S. Gigan, D. Gunduz, E. Hossain, Y . Jin, F. Lin, B. Liu, Z. Wan, J. Zhang, Z. Zhao, W. Zhu, Z. Chen, T. S. Durrani, H. Wang, J. Wu, T. Zhang, Y . Pan, Intelligent Computing 2023, 2, 0006

    work page 2023

  7. [7]

    Z. Liu, A. Ali, P. Kenesei, A. Miceli, H. Sharma, N. Schwarz, D. Trujillo, H. Yoo, R. Coffee, N. Layad, J. Thayer, R. Herbst, C. Yoon, I. Foster, in 2021 3rd Annual Workshop on Extreme- Scale Experiment-in-the-Loop Computing (XLOOP), 2021, pp. 15–23

    work page 2021

  8. [8]

    Woods, C

    W. Woods, C. Teuscher, in 2017 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2017, pp. 103–108

    work page 2017

  9. [9]

    Urata, H

    R. Urata, H. Liu, K. Yasumura, E. Mao, J. Berger, X. Zhou, C. Lam, R. Bannon, D. Hutchinson, D. Nelson, L. Poutievski, A. Singh, J. Ong, A. Vahdat, 2022, DOI 10.48550/arXiv.2208.10041

    work page doi:10.48550/arxiv.2208.10041 2022

  10. [10]

    H. Zhou, J. Dong, J. Cheng, W. Dong, C. Huang, Y . Shen, Q. Zhang, M. Gu, C. Qian, H. Chen, Z. Ruan, X. Zhang, Light Sci Appl 2022, 11, 30

    work page 2022

  11. [11]

    Amirsoleimani, F

    A. Amirsoleimani, F. Alibart, V . Yon, J. Xu, M. R. Pazhouhandeh, S. Ecoffey, Y . Beilliard, R. Genov, D. Drouin, Advanced Intelligent Systems 2020, 2, 2000115

    work page 2020

  12. [12]

    Maslej, L

    N. Maslej, L. Fattorini, E. Brynjolfsson, J. Etchemendy, K. Ligett, T. Lyons, J. Manyika, H. Ngo, J. C. Niebles, V . Parli, Y . Shoham, R. Wald, J. Clark, R. Perrault, 2023, DOI 10.48550/arXiv.2310.03715

    work page doi:10.48550/arxiv.2310.03715 2023

  13. [13]

    Dutta, P

    J. Dutta, P. Deshpande, B. Rai, SN Appl. Sci. 2021, 3, 657

    work page 2021

  14. [14]

    Dutta, M

    J. Dutta, M. Patwardhan, P. Deshpande, S. Karande, B. Rai, Sci Rep 2023, 13, 7347

    work page 2023

  15. [15]

    Harini, P

    S. Harini, P. Deshpande, J. Dutta, B. Rai, in Proceedings of the 1st International Conference on Water Energy Food and Sustainability (ICoWEFS 2021) (Eds.: J. R. da Costa Sanches Galvão, P. S. Duque de Brito, F. dos Santos Neves, F. G. da Silva Craveiro, H. de Amorim Almeida, J. O. Correia Vasco, L. M. Pires Neves, R. de Jesus Gomes, S. de Jesus Martins M...

    work page 2021

  16. [16]

    Dutta, M

    J. Dutta, M. Chennamkulam Ajith, S. Dutta, U. R. Kadhane, J. Kochupurackal B, B. Rai, Sci Rep 2020, 10, 15241

    work page 2020

  17. [17]

    Dutta, M

    J. Dutta, M. Patwardhan, P. Deshpande, B. Rai, n.d

    work page

  18. [18]

    Dutta, P

    J. Dutta, P. DESHPANDE, B. Rai, System and Method for Managing Ripening Conditions of Climacteric Fruits, 2020, US20200281220A1

    work page 2020

  19. [19]

    B. Rai, J. Dutta, P. DESHPANDE, S. B. KAUSLEY , S. S. Karande, M. S. PATWARDHAN, S. M. DESHMUKH, System and Method for Monitoring and Quality Evaluation of Perishable Food Items, 2022, US11488017B2

    work page 2022

  20. [20]

    Gholami, Z

    A. Gholami, Z. Yao, S. Kim, C. Hooper, M. W. Mahoney, K. Keutzer, IEEE Micro 2024, 44, 33

    work page 2024

  21. [21]

    S. Liu, R. M. Radway, X. Wang, J. Kwon, C. Trippel, P. Levis, S. Mitra, H.-S. P. Wong, in 2024 IEEE International Electron Devices Meeting (IEDM), IEEE, San Francisco, CA, USA, 2024, pp. 1–4

    work page 2024

  22. [22]

    Aleksic, in 2017 14th International Conference on Telecommunications (Con℡), 2017, pp

    S. Aleksic, in 2017 14th International Conference on Telecommunications (Con℡), 2017, pp. 41–46

    work page 2017

  23. [23]

    Haffner, W

    C. Haffner, W. Heni, Y . Fedoryshyn, J. Niegemann, A. Melikyan, D. L. Elder, B. Baeuerle, Y . Salamin, A. Josten, U. Koch, C. Hoessbacher, F. Ducry, L. Juchli, A. Emboras, D. Hillerkuss, M. Kohl, L. R. Dalton, C. Hafner, J. Leuthold, Nature Photon 2015, 9, 525

    work page 2015

  24. [24]

    Kachris, I

    C. Kachris, I. Tomkos, IEEE Communications Surveys & Tutorials 2012, 14, 1021

    work page 2012

  25. [25]

    Tsiokos, G

    D. Tsiokos, G. T. Kanellos, in Optical Interconnects for Data Centers (Eds.: T. Tekin, R. Pitwon, A. Håkansson, N. Pleros), Woodhead Publishing, 2017, pp. 43–73

    work page 2017

  26. [26]

    C. A. Thraskias, E. N. Lallas, N. Neumann, L. Schares, B. J. Offrein, R. Henker, D. Plettemeier, F. Ellinger, J. Leuthold, I. Tomkos, IEEE Communications Surveys & Tutorials 2018, 20, 2758

    work page 2018

  27. [27]

    S. S. Gill, H. Wu, P. Patros, C. Ottaviani, P. Arora, V . C. Pujol, D. Haunschild, A. K. Parlikad, O. Cetinkaya, H. Lutfiyya, V . Stankovski, R. Li, Y . Ding, J. Qadir, A. Abraham, S. K. Ghosh, H. H. Song, R. Sakellariou, O. Rana, J. J. P. C. Rodrigues, S. S. Kanhere, S. Dustdar, S. Uhlig, K. Ramamohanarao, R. Buyya, Telematics and Informatics Reports 202...

    work page 2024

  28. [28]

    Memory is all you need: An overview of compute- in-memory architectures for accelerating large language model inference.arXiv preprint arXiv:2406.08413,

    “Memory Is All You Need: An Overview of Compute -in-Memory Architectures for Accelerating Large Language Model Inference,” can be found under https://arxiv.org/html/2406.08413v1, n.d

    work page arXiv

  29. [29]

    Roadmap to neuromorphic computing with emerging technologies | APL Materials | AIP Publishing,

    “Roadmap to neuromorphic computing with emerging technologies | APL Materials | AIP Publishing,” can be found under https://pubs.aip.org/aip/apm/article/12/10/109201/3317314/Roadmap-to-neuromorphic- computing-with-emerging, n.d

    work page

  30. [30]

    Sebastian, M

    A. Sebastian, M. Le Gallo, R. Khaddam-Aljameh, E. Eleftheriou, Nat. Nanotechnol. 2020, 15, 529

    work page 2020

  31. [31]

    Y . Shen, N. C. Harris, S. Skirlo, M. Prabhu, T. Baehr-Jones, M. Hochberg, X. Sun, S. Zhao, H. Larochelle, D. Englund, M. Soljačić, Nature Photon 2017, 11, 441

    work page 2017

  32. [32]

    Capmany, I

    J. Capmany, I. Gasulla, D. Pérez, Nature Photon 2016, 10, 6

    work page 2016

  33. [33]

    N. C. Harris, G. R. Steinbrecher, M. Prabhu, Y . Lahini, J. Mower, D. Bunandar, C. Chen, F. N. C. Wong, T. Baehr-Jones, M. Hochberg, S. Lloyd, D. Englund, Nature Photon 2017, 11, 447

    work page 2017

  34. [34]

    Integrated photonics on thin -film lithium niobate,

    “Integrated photonics on thin -film lithium niobate,” can be found under https://opg.optica.org/aop/fulltext.cfm?uri=aop-13-2-242&id=450625, n.d

    work page

  35. [35]

    Prabhathan, K

    P. Prabhathan, K. V . Sreekanth, J. Teng, J. H. Ko, Y . J. Yoo, H.-H. Jeong, Y . Lee, S. Zhang, T. Cao, C.-C. Popescu, B. Mills, T. Gu, Z. Fang, R. Chen, H. Tong, Y . Wang, Q. He, Y . Lu, Z. Liu, H. Yu, A. Mandal, Y . Cui, A. S. Ansari, V . Bhingardive, M. Kang, C. K. Lai, M. Merklein, M. J. Müller, Y . M. Song, Z. Tian, J. Hu, M. Losurdo, A. Majumdar, X....

    work page 2023

  36. [36]

    Moody, V

    G. Moody, V . J. Sorger, D. J. Blumenthal, P. W. Juodawlkis, W. Loh, C. Sorace-Agaskar, A. E. Jones, K. C. Balram, J. C. F. Matthews, A. Laing, M. Davanco, L. Chang, J. E. Bowers, N. Quack, C. Galland, I. Aharonovich, M. A. Wolff, C. Schuck, N. Sinclair, M. Lončar, T. Komljenovic, D. Weld, S. Mookherjea, S. Buckley, M. Radulaski, S. Reitzenstein, B. Pinga...

    work page 2022

  37. [37]

    Bogaerts, D

    W. Bogaerts, D. Pérez, J. Capmany, D. A. B. Miller, J. Poon, D. Englund, F. Morichetti, A. Melloni, Nature 2020, 586, 207

    work page 2020

  38. [38]

    Haselman, S

    M. Haselman, S. Hauck, Proceedings of the IEEE 2010, 98, 11

    work page 2010

  39. [39]

    S. A. Schulz, Rupert. F. Oulton, M. Kenney, A. Alù, I. Staude, A. Bashiri, Z. Fedorova, R. Kolkowski, A. F. Koenderink, X. Xiao, J. Yang, W. J. Peveler, A. W. Clark, G. Perrakis, A. C. Tasolamprou, M. Kafesaki, A. Zaleska, W. Dickson, D. Richards, A. Zaya ts, H. Ren, Y . Kivshar, S. Maier, X. Chen, M. A. Ansari, Y . Gan, A. Alexeev, T. F. Krauss, A. Di Fa...

    work page 2024

  40. [40]

    Geler-Kremer, F

    J. Geler-Kremer, F. Eltes, P. Stark, D. Stark, D. Caimi, H. Siegwart, B. Jan Offrein, J. Fompeyrine, S. Abel, Nat. Photon. 2022, 16, 491

    work page 2022

  41. [41]

    K. Gao, K. Du, S. Tian, H. Wang, L. Zhang, Y . Guo, B. Luo, W. Zhang, T. Mei, Advanced Functional Materials 2021, 31, 2103327

    work page 2021

  42. [42]

    Moitra, Y

    P. Moitra, Y . Wang, X. Liang, L. Lu, A. Poh, T. W. W. Mass, R. E. Simpson, A. I. Kuznetsov, R. Paniagua-Dominguez, Advanced Materials 2023, 35, 2205367

    work page 2023

  43. [43]

    X. Li, N. Youngblood, C. Ríos, Z. Cheng, C. D. Wright, W. H. Pernice, H. Bhaskaran, Optica, OPTICA 2019, 6, 1

    work page 2019

  44. [44]

    E. Goi, Q. Zhang, X. Chen, H. Luan, M. Gu, PhotoniX 2020, 1, 3

    work page 2020

  45. [45]

    Tsakyridis, M

    A. Tsakyridis, M. Moralis-Pegios, G. Giamougiannis, M. Kirtas, N. Passalis, A. Tefas, N. Pleros, APL Photonics 2024, 9, 011102

    work page 2024

  46. [46]

    R. Chen, A. Tang, J. Dutta, V . Tara, J. Ye, Z. Fang, A. Majumdar, 2025, DOI 10.48550/arXiv.2506.18592

    work page doi:10.48550/arxiv.2506.18592 2025

  47. [47]

    R. Chen, V . Tara, J. Dutta, Z. Fang, J. Zheng, A. Majumdar, JOM 2024, 4, 031202

    work page 2024

  48. [48]

    Dutta, R

    J. Dutta, R. Chen, V . Tara, A. Majumdar, 2025

    work page 2025

  49. [49]

    Dutta, A

    J. Dutta, A. Ferraro, A. Manna, R. Chen, A. Pane, G. E. Lio, R. Caputo, A. Majumdar, ACS Photonics 2025, DOI 10.1021/acsphotonics.5c00715

    work page doi:10.1021/acsphotonics.5c00715 2025

  50. [50]

    Chakraborty, G

    I. Chakraborty, G. Saha, K. Roy, Phys. Rev. Appl. 2019, 11, 014063

    work page 2019

  51. [51]

    C. Lian, C. Vagionas, T. Alexoudi, N. Pleros, N. Youngblood, C. Ríos, Nanophotonics 2022, 11, 3823

    work page 2022

  52. [52]

    Z. Zhu, G. Di Guglielmo, Q. Cheng, M. Glick, J. Kwon, H. Guan, L. P. Carloni, K. Bergman, Journal of Lightwave Technology 2020, 38, 2815

    work page 2020

  53. [53]

    Abdollahramezani, O

    S. Abdollahramezani, O. Hemmatyar, M. Taghinejad, H. Taghinejad, A. Krasnok, A. A. Eftekhar, C. Teichrib, S. Deshmukh, M. A. El -Sayed, E. Pop, M. Wuttig, A. Alù, W. Cai, A. Adibi, Nat Commun 2022, 13, 1696

    work page 2022

  54. [54]

    Matos, N

    R. Matos, N. Pala, Micromachines (Basel) 2023, 14, 1259

    work page 2023

  55. [55]

    E.-S. Lee, J. E. Yoo, D. S. Yoon, S. D. Kim, Y . Kim, S. Hwang, D. Kim, H.-C. Jeong, W. T. Kim, H. J. Chang, H. Suh, D.-H. Ko, C. Cho, Y . Choi, D. H. Kim, M.-H. Cho, Sci Rep 2020, 10, 13673

    work page 2020

  56. [56]

    R. Xu, S. Taheriniya, A. P. Ovvyan, J. R. Bankwitz, L. McRae, E. Jung, F. Brückerhoff - Plückelmann, I. Bente, F. Lenzini, H. Bhaskaran, W. H. P. Pernice, Opt. Mater. Express, OME 2023, 13, 3553

    work page 2023

  57. [57]

    Z. Fang, R. Chen, J. Zheng, A. Majumdar, IEEE J. Select. Topics Quantum Electron. 2022, 28, 1

    work page 2022

  58. [58]

    Feldmann, M

    J. Feldmann, M. Stegmaier, N. Gruhler, C. Ríos, H. Bhaskaran, C. D. Wright, W. H. P. Pernice, Nat Commun 2017, 8, 1256

    work page 2017

  59. [60]

    De Carlo, F

    M. De Carlo, F. De Leonardis, R. Soref, V . M. N. Passaro, Journal of Lightwave Technology 2025, 43, 3429

    work page 2025

  60. [61]

    Pérez, I

    D. Pérez, I. Gasulla, L. Crudgington, D. J. Thomson, A. Z. Khokhar, K. Li, W. Cao, G. Z. Mashanovich, J. Capmany, Nat Commun 2017, 8, 636

    work page 2017

  61. [62]

    Zhang, J

    W. Zhang, J. Yao, Nat Commun 2020, 11, 406

    work page 2020

  62. [63]

    G. T. Reed, G. Mashanovich, F. Y . Gardes, D. J. Thomson, Nature Photon 2010, 4, 518

    work page 2010

  63. [64]

    C. Wang, M. Zhang, X. Chen, M. Bertrand, A. Shams-Ansari, S. Chandrasekhar, P. Winzer, M. Lončar, Nature 2018, 562, 101

    work page 2018

  64. [65]

    Melikyan, L

    A. Melikyan, L. Alloatti, A. Muslija, D. Hillerkuss, P. C. Schindler, J. Li, R. Palmer, D. Korn, S. Muehlbrandt, D. Van Thourhout, B. Chen, R. Dinu, M. Sommer, C. Koos, M. Kohl, W. Freude, J. Leuthold, Nature Photon 2014, 8, 229

    work page 2014

  65. [66]

    Prencipe, K

    A. Prencipe, K. Gallo, IEEE Journal of Quantum Electronics 2023, 59, 1

    work page 2023

  66. [67]

    R. Chen, Z. Fang, F. Miller, H. Rarick, J. E. Fröch, A. Majumdar, ACS Photonics 2022, 9, 3181

    work page 2022

  67. [68]

    Aryana, C

    K. Aryana, C. C. Popescu, H. Sun, K. Aryana, H. J. Kim, M. Julian, M. R. Islam, C. A. Ríos Ocampo, T. Gu, J. Hu, P. E. Hopkins, Advanced Materials 2025, 37, 2414031

    work page 2025

  68. [69]

    Blundell, T

    S. Blundell, T. W. Radford, I. A. Ajia, D. Lawson, X. Yan, M. Banakar, D. J. Thomson, I. Zeimpekis, O. L. Muskens, ACS Photonics 2025, 12, 1382

    work page 2025

  69. [70]

    F. M. Schenk, T. Zellweger, D. Kumaar, D. Bošković, S. Wintersteller, P. Solokha, S. De Negri, A. Emboras, V . Wood, M. Yarema, ACS Nano 2023, 18, 1063

    work page 2023

  70. [71]

    J. Meng, Y . Gui, B. M. Nouri, X. Ma, Y . Zhang, C.-C. Popescu, M. Kang, M. Miscuglio, N. Peserico, K. Richardson, J. Hu, H. Dalir, V . J. Sorger, Light Sci Appl 2023, 12, 189

    work page 2023

  71. [72]

    R. Chen, Z. Fang, C. Perez, F. Miller, K. Kumari, A. Saxena, J. Zheng, S. J. Geiger, K. E. Goodson, A. Majumdar, Nat Commun 2023, 14, 3465

    work page 2023

  72. [73]

    Z. Fang, R. Chen, J. Zheng, A. I. Khan, K. M. Neilson, S. J. Geiger, D. M. Callahan, M. G. Moebius, A. Saxena, M. E. Chen, C. Rios, J. Hu, E. Pop, A. Majumdar, Nat. Nanotechnol. 2022, 17, 842

    work page 2022

  73. [74]

    M. Wei, K. Xu, B. Tang, J. Li, Y . Yun, P. Zhang, Y . Wu, K. Bao, K. Lei, Z. Chen, H. Ma, C. Sun, R. Liu, M. Li, L. Li, H. Lin, Nat Commun 2024, 15, 2786

    work page 2024

  74. [76]

    (PDF) A New Family of Ultralow Loss Reversible Phase‐Change Materials for Photonic Integrated Circuits: Sb 2 S 3 and Sb 2 Se 3,

    “(PDF) A New Family of Ultralow Loss Reversible Phase‐Change Materials for Photonic Integrated Circuits: Sb 2 S 3 and Sb 2 Se 3,” can be found under https://www.researchgate.net/publication/342814269_A_New_Family_of_Ultralow_Loss_R eversible_Phase- Change_Materials_for_Photonic_Integrated_Circuits_Sb_2_S_3_and_Sb_2_Se_3, n.d

    work page arXiv

  75. [77]

    R. Chen, V . Tara, M. Choi, J. Dutta, J. Sim, J. Ye, Z. Fang, J. Zheng, A. Majumdar, npj Nanophoton. 2024, 1, 1

    work page 2024

  76. [78]

    X. Yang, L. Lu, Y . Li, Y . Wu, Z. Li, J. Chen, L. Zhou, Advanced Functional Materials 2023, 33, 2304601

    work page 2023

  77. [79]

    Z. Fang, B. Mills, R. Chen, J. Zhang, P. Xu, J. Hu, A. Majumdar, Nano Lett. 2024, 24, 97

    work page 2024

  78. [80]

    P. Xu, J. Zheng, J. K. Doylend, A. Majumdar, ACS Photonics 2019, 6, 553

    work page 2019

  79. [81]

    Song, J.-H

    M.-K. Song, J.-H. Kang, X. Zhang, W. Ji, A. Ascoli, I. Messaris, A. S. Demirkol, B. Dong, S. Aggarwal, W. Wan, S.-M. Hong, S. G. Cardwell, I. Boybat, J. Seo, J.-S. Lee, M. Lanza, H. Yeon, M. Onen, J. Li, B. Yildiz, J. A. Del Alamo, S. Kim, S. Choi, G. Milano, C. Ricciardi, L. Alff, Y . Chai, Z. Wang, H. Bhaskaran, M. C. Hersam, D. Strukov, H.-S. P. Wong, ...

    work page 2023

  80. [82]

    C. Wu, H. Yu, H. Li, X. Zhang, I. Takeuchi, M. Li, ACS Photonics 2019, 6, 87

    work page 2019

Showing first 80 references.