Typed states for the displayed outbound observations.
Source: paper_references, paper_reference_links, observed 2026-05-12T01:59:33.335095Z
Paper Citation Record · LEDGER
As of 4 August 2026, this Paper Citation Record lists 9 of 9 outbound references and 0 inbound Pith citation observations for arXiv:2605.09108.
A citation records a reference. It does not transfer a finding from one paper to another.
Typed states for the displayed outbound observations.
Source: paper_references, paper_reference_links, observed 2026-05-12T01:59:33.335095Z
One-hop event checks from named stored sources.
Source: scholarly_work_events, retraction_status_cache, observed 2026-08-03T06:30:56.289259+00:00
Pith citing papers itemized under the disclosed page cap.
Source: paper_references, paper_reference_links
A source-named dated measurement, never combined with another source.
Source: cited_works
9 of 9 outbound references displayed
External citation measurements
No source-named external measurement is stored.
Observation 5886b1e0-be70-4f1a-a06b-7dc95602bbc2 · outbound
Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3 Prospectives for AlN electronics and optoelectronics and the important role of alternative synthesis
Reference 1
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-03T06:30:56.289259+00:00.
Observation b2634bcc-da9f-4a96-98ec-ac7d0671c0d1 · outbound
Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3 Characteristics of native oxides-interfaced GaAs/Ge np diodes
Reference 2
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-03T06:30:56.289259+00:00.
Observation 1bbb552f-a44b-4eb6-99cb-4be81db09499 · outbound
Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3 Lattice-mismatched semiconductor heterostructures
Reference 3
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-03T06:30:56.289259+00:00.
Observation b361ae8c-6291-4304-979b-1aa1bddaafc3 · outbound
Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3 Wafer-scale Semiconductor Grafting: Enabling High-Performance, Lattice-Mismatched Heterojunctions
Reference 4
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-03T06:30:56.289259+00:00.
Observation d15e7d03-a593-48b1-b97c-95eb4c992a74 · outbound
Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3 Optoelectronically Active GaAs/GeSn-MQW/Ge Heterojunctions Created via Semiconductor Grafting
Reference 5
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-03T06:30:56.289259+00:00.
Observation 295ea2e3-bdc0-4540-8ab2-af6b6dcad42f · outbound
Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3 Grafted GaAs/Si Heterojunction Tunnel Diodes with Improved Peak- to-valley Current Ratio (PVCR) of up to 36.38
Reference 6
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-03T06:30:56.289259+00:00.
Observation 15a9debe-2066-437d-ae48-8918a47a4d99 · outbound
Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3 Preliminary demonstration of diamond– GaN p–n diodes via grafting
Reference 7
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-03T06:30:56.289259+00:00.
Observation f9289af6-6ae5-4ed8-acee-3599ac053719 · outbound
Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3 Low -temperature processing to obtain cont act resistance of <0.03 Ohm mm to boron-doped diamond
Reference 8
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-03T06:30:56.289259+00:00.
Observation 3dd42e22-fa46-444b-b024-ba982ecf8376 · outbound
Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3 Investigation of ultrathin surface passivation layers for GaN: a comparative analysis of Al₂O₃, SiO₂, and SiNₓ in reducing surface recombination
Reference 9
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-03T06:30:56.289259+00:00.
No inbound Pith citation observations are available.