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Paper Citation Record · LEDGER

Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3

As of 4 August 2026, this Paper Citation Record lists 9 of 9 outbound references and 0 inbound Pith citation observations for arXiv:2605.09108.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2605.09108 v1

Coverage vector

measured 9 of 9 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-05-12T01:59:33.335095Z

measured 9 of 9 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-03T06:30:56.289259+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

9 of 9 outbound references displayed

  • verified exact4
  • verified fuzzy5
  • unresolved0
  • parse uncertain0
  • malformed identifier0
  • metadata mismatch0

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation 5886b1e0-be70-4f1a-a06b-7dc95602bbc2 · outbound

This paper cites Prospectives for AlN electronics and optoelectronics and the important role of alternative synthesis.

Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3 Prospectives for AlN electronics and optoelectronics and the important role of alternative synthesis

Reference 1

Resolution
verified fuzzy
raw_fallback, observed 2026-05-13T00:27:00.303098Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-03T06:30:56.289259+00:00.

source=pdf_text observed=2026-05-12T01:59:33.335095Z digest=sha256:16cdb4e76f90f20d07944dde5c907cd10ee77b5917093bfa1c9123789b6715fe

Observation b2634bcc-da9f-4a96-98ec-ac7d0671c0d1 · outbound

This paper cites Characteristics of native oxides-interfaced GaAs/Ge np diodes.

Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3 Characteristics of native oxides-interfaced GaAs/Ge np diodes

Reference 2

Resolution
verified fuzzy
raw_fallback, observed 2026-05-13T00:27:00.309451Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-03T06:30:56.289259+00:00.

source=pdf_text observed=2026-05-12T01:59:33.335095Z digest=sha256:6ccf57b7ef5df2d87e70b72be64f258334bcfe12b47b56070208ab9aa55d21b2

Observation 1bbb552f-a44b-4eb6-99cb-4be81db09499 · outbound

This paper cites Lattice-mismatched semiconductor heterostructures.

Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3 Lattice-mismatched semiconductor heterostructures

Reference 3

Resolution
verified exact
arxiv_id, observed 2026-07-04T23:17:48.560894Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-03T06:30:56.289259+00:00.

source=pdf_text observed=2026-05-12T01:59:33.335095Z digest=sha256:8c98fc8161d4a84861669f65365af85ce7713254cfe8c6d0235f0d5b86e6659d

Observation b361ae8c-6291-4304-979b-1aa1bddaafc3 · outbound

This paper cites Wafer-scale Semiconductor Grafting: Enabling High-Performance, Lattice-Mismatched Heterojunctions.

Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3 Wafer-scale Semiconductor Grafting: Enabling High-Performance, Lattice-Mismatched Heterojunctions

Reference 4

Resolution
verified exact
arxiv_id, observed 2026-05-12T02:01:15.130048Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-03T06:30:56.289259+00:00.

source=pdf_text observed=2026-05-12T01:59:33.335095Z digest=sha256:207a7e676a7dae52ea30c2d691d8c48b43fd92b80aff130d01c1d9d8482fe87a

Observation d15e7d03-a593-48b1-b97c-95eb4c992a74 · outbound

This paper cites Optoelectronically Active GaAs/GeSn-MQW/Ge Heterojunctions Created via Semiconductor Grafting.

Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3 Optoelectronically Active GaAs/GeSn-MQW/Ge Heterojunctions Created via Semiconductor Grafting

Reference 5

Resolution
verified exact
arxiv_id, observed 2026-05-12T02:01:15.133382Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-03T06:30:56.289259+00:00.

source=pdf_text observed=2026-05-12T01:59:33.335095Z digest=sha256:9c25022a9d06d12665a1b8e97a06ada5d3b38811c756b65512a8f7016bf1929d

Observation 295ea2e3-bdc0-4540-8ab2-af6b6dcad42f · outbound

This paper cites Grafted GaAs/Si Heterojunction Tunnel Diodes with Improved Peak- to-valley Current Ratio (PVCR) of up to 36.38.

Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3 Grafted GaAs/Si Heterojunction Tunnel Diodes with Improved Peak- to-valley Current Ratio (PVCR) of up to 36.38

Reference 6

Resolution
verified fuzzy
raw_fallback, observed 2026-05-13T00:27:00.299536Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-03T06:30:56.289259+00:00.

source=pdf_text observed=2026-05-12T01:59:33.335095Z digest=sha256:9c0e72652daffe68dbccce3deee74bbd143f67374bf50d576e812bcf0495b8fd

Observation 15a9debe-2066-437d-ae48-8918a47a4d99 · outbound

This paper cites Preliminary demonstration of diamond– GaN p–n diodes via grafting.

Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3 Preliminary demonstration of diamond– GaN p–n diodes via grafting

Reference 7

Resolution
verified exact
arxiv_id, observed 2026-05-12T02:01:15.137051Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-03T06:30:56.289259+00:00.

source=pdf_text observed=2026-05-12T01:59:33.335095Z digest=sha256:2d1f002d4891ebca0c25c94e550f501646e2a017caef1cffebcadc7276a0f3ee

Observation f9289af6-6ae5-4ed8-acee-3599ac053719 · outbound

This paper cites Low -temperature processing to obtain cont act resistance of <0.03 Ohm mm to boron-doped diamond.

Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3 Low -temperature processing to obtain cont act resistance of <0.03 Ohm mm to boron-doped diamond

Reference 8

Resolution
verified fuzzy
raw_fallback, observed 2026-05-13T00:27:00.289355Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-03T06:30:56.289259+00:00.

source=pdf_text observed=2026-05-12T01:59:33.335095Z digest=sha256:f1799165590d368c10e6bcb982660f933e67d3d4d22d11c42fe68df81a76c964

Observation 3dd42e22-fa46-444b-b024-ba982ecf8376 · outbound

This paper cites Investigation of ultrathin surface passivation layers for GaN: a comparative analysis of Al₂O₃, SiO₂, and SiNₓ in reducing surface recombination.

Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3 Investigation of ultrathin surface passivation layers for GaN: a comparative analysis of Al₂O₃, SiO₂, and SiNₓ in reducing surface recombination

Reference 9

Resolution
verified fuzzy
raw_fallback, observed 2026-05-13T00:27:00.295277Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-03T06:30:56.289259+00:00.

source=pdf_text observed=2026-05-12T01:59:33.335095Z digest=sha256:81017ef4e588ddf583f96438d1e6b0e1d8adac4a8e87f75773a9116976261a68

Pith citing papers

No inbound Pith citation observations are available.