Paper Citation Record · LEDGER

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN

As of 4 August 2026, this Paper Citation Record lists 31 of 31 outbound references and 0 inbound Pith citation observations for arXiv:2606.12568.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2606.12568 v1

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measured 31 of 31 reference resolution

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Source: paper_references, paper_reference_links, observed 2026-06-27T08:55:01.471880Z

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Source: scholarly_work_events, retraction_status_cache, observed 2026-08-04T06:34:03.388597+00:00

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Outbound references

Observation a65aa6cf-f7e9-47c0-90b5-ad570324cd81 · outbound

This paper cites Wave-number-dependent dielectric function of semiconductors.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Wave-number-dependent dielectric function of semiconductors

Reference 1

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Observation 32b32539-cf62-4c29-a6a8-d05d3aa9b6ff · outbound

This paper cites Two-dimensional devices and integration towards the silicon lines.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Two-dimensional devices and integration towards the silicon lines

Reference 2

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Observation b39d6c4d-7742-43a9-a089-1b5141ab7cbd · outbound

This paper cites Single-crystalline van der Waals layered dielectric with high dielectric constant.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Single-crystalline van der Waals layered dielectric with high dielectric constant

Reference 3

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Observation 8d9f8ec7-4e15-4c50-b4e2-85db28028e35 · outbound

This paper cites Semiconductors used in photovoltaic and photocatalytic devices: assessing fundamental properties from DFT.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Semiconductors used in photovoltaic and photocatalytic devices: assessing fundamental properties from DFT

Reference 4

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Observation 7fe2daeb-3495-4428-8fe3-1bb0857b6b84 · outbound

This paper cites Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation

Reference 5

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Observation 79382a04-ff40-42e5-b50d-47ed81142472 · outbound

This paper cites High-K materials and metal gates for CMOS applications.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN High-K materials and metal gates for CMOS applications

Reference 6

Resolution: unresolved; no resolver link, observed 2026-06-27T08:55:01.471880Z

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Observation 6a10e41b-7995-480c-a9c5-44cc79e79087 · outbound

This paper cites High-κ perovskite membranes as insulators for two-dimensional transistors.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN High-κ perovskite membranes as insulators for two-dimensional transistors

Reference 7

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Observation 28266cbb-d570-4975-be6e-83d46abdceaa · outbound

This paper cites High-κ monocrystalline dielectrics for low-power two-dimensional electronics.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN High-κ monocrystalline dielectrics for low-power two-dimensional electronics

Reference 8

Resolution: unresolved; no resolver link, observed 2026-06-27T08:55:01.471880Z

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Observation 9ae523df-e444-43b5-94e2-33e2ef93dc5c · outbound

This paper cites Crystal structure and band gap determination of HfO2 thin films.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Crystal structure and band gap determination of HfO2 thin films

Reference 9

Resolution: unresolved; no resolver link, observed 2026-06-27T08:55:01.471880Z

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Observation 92987f3f-44a9-4869-86f8-359ee85b6334 · outbound

This paper cites Electronic band structure of zirconia and hafnia polymorphs from the W perspective.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Electronic band structure of zirconia and hafnia polymorphs from the W perspective

Reference 10

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Observation 0db8eba1-ff4f-44a3-81dc-d8cc8c34cc95 · outbound

This paper cites Demonstration and STEM analysis of ferroelectric switching in MOCVD‐grown single crystalline Al0.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Demonstration and STEM analysis of ferroelectric switching in MOCVD‐grown single crystalline Al0

Reference 11

Resolution: unresolved; no resolver link, observed 2026-06-27T08:55:01.471880Z

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Observation 96779e79-c2c4-414c-b449-840faed2e964 · outbound

This paper cites Experimental determination of giant polarization in wurtzite III-nitride semiconductors.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Experimental determination of giant polarization in wurtzite III-nitride semiconductors

Reference 12

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Observation a1e1030a-0b30-4a65-8e8e-d15e34c2c421 · outbound

This paper cites Ferroelectric N-polar ScAlN/ aN heterostructures grown by molecular beam epitaxy.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Ferroelectric N-polar ScAlN/ aN heterostructures grown by molecular beam epitaxy

Reference 13

Resolution: unresolved; no resolver link, observed 2026-06-27T08:55:01.471880Z

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Observation c5eb6a62-3814-4a91-a441-9aa1e70a50da · outbound

This paper cites Polarity inversion of ferroelectric AlScN films by radio frequency power.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Polarity inversion of ferroelectric AlScN films by radio frequency power

Reference 14

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Observation de5721d5-9c1f-4933-b757-ead4b987b77f · outbound

This paper cites Effect of Sc content on the polarity of AlScN thin films deposited on indium tin oxide by radio frequency-magnetron sputtering.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Effect of Sc content on the polarity of AlScN thin films deposited on indium tin oxide by radio frequency-magnetron sputtering

Reference 15

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Observation 26c1c28b-72b2-410d-8d2c-32025382c2fc · outbound

This paper cites Anomalously abrupt switching of wurtzite -structured ferroelectrics: simultaneous non-linear nucleation and growth model.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Anomalously abrupt switching of wurtzite -structured ferroelectrics: simultaneous non-linear nucleation and growth model

Reference 16

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Observation 08c5480b-649e-40db-8f5f-2e1b56502dff · outbound

This paper cites Influence of Ion Energy on the Surface Polarity of AlScN Thin Films During Sputter Process.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Influence of Ion Energy on the Surface Polarity of AlScN Thin Films During Sputter Process

Reference 17

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Observation f5c798c1-53a6-4ce0-b909-7e79d1cbf0ce · outbound

This paper cites Van der Waals engineering of ferroelectric heterostructures for long-retention memory.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Van der Waals engineering of ferroelectric heterostructures for long-retention memory

Reference 18

Resolution: unresolved; no resolver link, observed 2026-06-27T08:55:01.471880Z

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Observation d3d2689e-4ed1-4501-a3e6-d4aecbff067b · outbound

This paper cites Ferroelectric Zr0.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Ferroelectric Zr0

Reference 19

Resolution: unresolved; no resolver link, observed 2026-06-27T08:55:01.471880Z

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Observation e6879a24-d445-4ddd-8e8f-001f9b975ebe · outbound

This paper cites A rhombohedral ferroelectric phase in epitaxially strained Hf0.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN A rhombohedral ferroelectric phase in epitaxially strained Hf0

Reference 20

Resolution: unresolved; no resolver link, observed 2026-06-27T08:55:01.471880Z

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Observation 4556739a-c759-4521-9268-c4a5e543292e · outbound

This paper cites Enhanced ferroelectricity in ultrathin films grown directly on silicon.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Enhanced ferroelectricity in ultrathin films grown directly on silicon

Reference 21

Resolution: unresolved; no resolver link, observed 2026-06-27T08:55:01.471880Z

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Observation 7843980d-67d7-4757-8ecf-2bc21146f72a · outbound

This paper cites Scaling of structure and electrical properties in ultrathin epitaxial ferroelectric heterostructures.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Scaling of structure and electrical properties in ultrathin epitaxial ferroelectric heterostructures

Reference 22

Resolution: unresolved; no resolver link, observed 2026-06-27T08:55:01.471880Z

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Observation bd06ef81-9bab-4b36-9f33-01c2a8cd5f0f · outbound

This paper cites Critical thickness of ultrathin ferroelectric BaTiO3 films.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Critical thickness of ultrathin ferroelectric BaTiO3 films

Reference 23

Resolution: unresolved; no resolver link, observed 2026-06-27T08:55:01.471880Z

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Observation 8f9b80c1-12ed-4318-a73a-d7dcff8382ae · outbound

This paper cites Ultrathin oriented BiFeO3 films from deposition of atomic layers with greatly improved leakage and ferroelectric properties.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Ultrathin oriented BiFeO3 films from deposition of atomic layers with greatly improved leakage and ferroelectric properties

Reference 24

Resolution: unresolved; no resolver link, observed 2026-06-27T08:55:01.471880Z

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Observation 5f87c270-b9be-4fba-9285-ec58f7590dcf · outbound

This paper cites Ferroelectricity in atomic-scale titanium dioxide dielectric films.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Ferroelectricity in atomic-scale titanium dioxide dielectric films

Reference 25

Resolution: unresolved; no resolver link, observed 2026-06-27T08:55:01.471880Z

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Observation ebe10abf-80cf-4a6a-a262-b75823410929 · outbound

This paper cites Room temperature in- plane ferroelectricity in van der Waals In2Se3.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Room temperature in- plane ferroelectricity in van der Waals In2Se3

Reference 26

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Observation 1d734e02-52b0-4d4e-a262-d77b77ebb255 · outbound

This paper cites Effects of scaling the film thickness on the ferroelectric properties of SrBi 2 Ta 2 O 9 ultra thin films.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Effects of scaling the film thickness on the ferroelectric properties of SrBi 2 Ta 2 O 9 ultra thin films

Reference 27

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Observation d44053ee-e996-4338-a1bc-9cbe78e25dac · outbound

This paper cites Fabrication of Ultrathin Ferroelectric Al0.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Fabrication of Ultrathin Ferroelectric Al0

Reference 28

Resolution: unresolved; no resolver link, observed 2026-06-27T08:55:01.471880Z

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Observation 0f678e7a-d193-4520-9d0a-7808c5191547 · outbound

This paper cites In‐ grain ferroelectric switching in sub‐5 nm thin Al0.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN In‐ grain ferroelectric switching in sub‐5 nm thin Al0

Reference 29

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Observation 89121bb4-dbe7-4b64-81b0-68b2a4e3257b · outbound

This paper cites Optical processes in semiconductors.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Optical processes in semiconductors

Reference 30

Resolution: unresolved; no resolver link, observed 2026-06-27T08:55:01.471880Z

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Observation a545f911-e472-4bdc-8015-572a736e2ce7 · outbound

This paper cites Optical constants and band gap of wurtzite Al1− xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x= 0.41.

Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN Optical constants and band gap of wurtzite Al1− xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x= 0.41

Reference 31

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