Paper Citation Record · LEDGER

High-Mobility Ge-Doped $\beta$-Ga$_2$O$_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

As of 13 August 2026, this Paper Citation Record lists 7 of 7 outbound references and 1 inbound Pith citation observation for arXiv:2607.10908.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2607.10908 v1

Coverage vector

measured 7 of 7 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-07-14T08:23:12.201530Z

measured 8 of 8 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-13T06:32:02.005865+00:00

measured 1 of 1 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links, observed 2026-08-11T04:17:51.817717Z

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: pith, observed 2026-08-11T04:17:51.938097Z

Reference resolution

7 of 7 outbound references displayed

verified exact2
verified fuzzy0
unresolved5
parse uncertain0
malformed identifier0
metadata mismatch0

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation a15af330-7350-4938-bfca-78449844a1cf · outbound

This paper cites an unresolved cited work.

High-Mobility Ge-Doped $\beta$-Ga$_2$O$_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition Unresolved cited work

Reference 1

Resolution: unresolved; no resolver link, observed 2026-07-14T08:23:12.201530Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation fb044e9d-90e5-475e-ba14-03cbdff3beaa · outbound

This paper cites VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) \beta-Ga2O3 HJDs with PFOM >2.3 GW/cm2.

High-Mobility Ge-Doped $\beta$-Ga$_2$O$_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) \beta-Ga2O3 HJDs with PFOM >2.3 GW/cm2

Reference 2

Resolution: unresolved; no resolver link, observed 2026-07-14T08:23:12.201530Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 9885d737-6687-41a9-8fce-02a24ec82fcd · outbound

This paper cites R.; Das, N.; Saha, C.

High-Mobility Ge-Doped $\beta$-Ga$_2$O$_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition R.; Das, N.; Saha, C

Reference 3

Resolution: verified exact; doi, observed 2026-07-14T08:30:25.217402Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 2ecc2910-c109-4998-8f34-54aae6ececf0 · outbound

This paper cites N.; Vaidya, A.; Nipu, N.

High-Mobility Ge-Doped $\beta$-Ga$_2$O$_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition N.; Vaidya, A.; Nipu, N

Reference 4

Resolution: unresolved; no resolver link, observed 2026-07-14T08:23:12.201530Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 9df85fb2-d827-4187-a319-80df17bbd2ec · outbound

This paper cites G.; Shimamura, K.; Yoshikawa, Y .; Ujiie, T.; Aoki, K.

High-Mobility Ge-Doped $\beta$-Ga$_2$O$_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition G.; Shimamura, K.; Yoshikawa, Y .; Ujiie, T.; Aoki, K

Reference 5

Resolution: unresolved; no resolver link, observed 2026-07-14T08:23:12.201530Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 8a9587ca-c680-4217-890e-b745f4d6bcf7 · outbound

This paper cites A.; Pandey, R.; Amzallag, E.; Baraille, I.; Rérat, M.

High-Mobility Ge-Doped $\beta$-Ga$_2$O$_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition A.; Pandey, R.; Amzallag, E.; Baraille, I.; Rérat, M

Reference 6

Resolution: verified exact; doi, observed 2026-07-14T08:30:25.210742Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation f88174cf-73c7-4704-a0c0-741499a3c026 · outbound

This paper cites an unresolved cited work.

High-Mobility Ge-Doped $\beta$-Ga$_2$O$_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition Unresolved cited work

Reference 7

Resolution: unresolved; no resolver link, observed 2026-07-14T08:23:12.201530Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Pith citing papers

Observation 75f55a87-14c5-45be-9e24-4f57398a43d6 · inbound

Sn-Doping in LPCVD-Grown (010) $\beta$-Ga$_2$O$_3$ Films cites this paper.

Sn-Doping in LPCVD-Grown (010) $\beta$-Ga$_2$O$_3$ Films High-Mobility Ge-Doped $\beta$-Ga$_2$O$_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

Reference 3

Resolution: metadata mismatch; local_arxiv, observed 2026-08-11T04:17:51.942930Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.