Paper Citation Record · LEDGER

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors

As of 16 August 2026, this Paper Citation Record lists 26 of 26 outbound references and 0 inbound Pith citation observations for arXiv:2607.13846.

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pith.paper-citation-record.v1
2607.13846 v1

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Outbound references

Observation ae3159ad-2b31-4f45-b88f-21b971f1d77c · outbound

This paper cites Alternative energy technologies.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors Alternative energy technologies

Reference 1

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Observation 8bf5f28c-af41-4149-9845-7a3ded179564 · outbound

This paper cites Thin film solar cells based on the ternary compound Cu2SnS3.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors Thin film solar cells based on the ternary compound Cu2SnS3

Reference 2

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Observation 82fdf18d-0c74-4a4f-b482-2e67d280363b · outbound

This paper cites First principles study of electronic and optical properties of Cu2ZnSnX4 (X= S, Se) solar absorbers by Tran –Blaha-modified Becke –Johnson potential approach.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors First principles study of electronic and optical properties of Cu2ZnSnX4 (X= S, Se) solar absorbers by Tran –Blaha-modified Becke –Johnson potential approach

Reference 3

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Observation 15f620fa-ea7e-44c9-b848-53dd97cc7973 · outbound

This paper cites Enhanced design of kesterite solar cells through high -throughput screening and machine learning approaches.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors Enhanced design of kesterite solar cells through high -throughput screening and machine learning approaches

Reference 4

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Observation 238fac56-11ae-4a44-847d-9f6492a12296 · outbound

This paper cites Fabrication of Cu2ZnSn(S,Se)4 thin film solar cell devices based on printable nano-ink.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors Fabrication of Cu2ZnSn(S,Se)4 thin film solar cell devices based on printable nano-ink

Reference 5

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Observation 9db6c1a3-1966-4183-bf2f-9acd99302828 · outbound

This paper cites Device postannealing enabling over 12% efficient solution‐processed Cu2ZnSnS4 solar cells with Cd2+ substitution.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors Device postannealing enabling over 12% efficient solution‐processed Cu2ZnSnS4 solar cells with Cd2+ substitution

Reference 6

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Observation ce63713e-6f38-4717-9f44-c043f6f77578 · outbound

This paper cites Ni substitution in Cu2ZnSnS4 thin films: solubility limit, secondary phases, and their correlation with structural and optical properties.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors Ni substitution in Cu2ZnSnS4 thin films: solubility limit, secondary phases, and their correlation with structural and optical properties

Reference 7

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Observation f138c1a1-6f8a-4eab-a36b-a48bf1f197e6 · outbound

This paper cites Ab initio study on electronic and optical properties of Cu2NiGeS4 for photovoltaic applications.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors Ab initio study on electronic and optical properties of Cu2NiGeS4 for photovoltaic applications

Reference 8

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Observation 7f90bc56-2ba2-4abd-9fcf-53400239cbd9 · outbound

This paper cites Analysis of the optical properties and electronic structure of semiconductors of the Cu2NiXS4 (X= Si, Ge, Sn) family as new promising materials for optoelectronic devices.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors Analysis of the optical properties and electronic structure of semiconductors of the Cu2NiXS4 (X= Si, Ge, Sn) family as new promising materials for optoelectronic devices

Reference 9

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Observation 09486eb5-333b-4537-8ff0-13a80b4bce58 · outbound

This paper cites Bandgap tuning and analysis of the electronic structure of the Cu2NiXS4 (X= Sn, Ge, Si) system: mBJ accuracy with DFT expense.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors Bandgap tuning and analysis of the electronic structure of the Cu2NiXS4 (X= Sn, Ge, Si) system: mBJ accuracy with DFT expense

Reference 10

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Observation 298969c9-3003-4f2a-9082-6ab77ccc4545 · outbound

This paper cites Band gap engineering and electronic structure of Cu2Ni(Sn,Ge,Si)Se4 kesterites: A DFT perspective on new earth-abundant semiconductors for high -performance photovoltaics.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors Band gap engineering and electronic structure of Cu2Ni(Sn,Ge,Si)Se4 kesterites: A DFT perspective on new earth-abundant semiconductors for high -performance photovoltaics

Reference 11

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Observation 821726d9-bb10-4e52-ac00-92ea6fd0cfb9 · outbound

This paper cites Study of structural stability, mechanical and optoelectronic properties of new earth -abundant Cu2Ni(Sn,Ge,Si)Se4 kesterites for photovoltaic applications.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors Study of structural stability, mechanical and optoelectronic properties of new earth -abundant Cu2Ni(Sn,Ge,Si)Se4 kesterites for photovoltaic applications

Reference 12

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Observation c2d5b2c8-74aa-4aad-9908-eefc6729a2bf · outbound

This paper cites The effect of phase changes on optoelectronic properties of lead-free CsSnI3 perovskites.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors The effect of phase changes on optoelectronic properties of lead-free CsSnI3 perovskites

Reference 13

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Observation 72c8a4d9-c687-4bcb-ba1b-40cb1807842c · outbound

This paper cites Molecular and dissociative adsorption of H₂O on ZrO2/YSZ surfaces.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors Molecular and dissociative adsorption of H₂O on ZrO2/YSZ surfaces

Reference 14

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Observation 8e0d2945-b683-4171-ac5f-491fc2796a0e · outbound

This paper cites Efficient iterative schemes for ab initio total-energy calculations using a plane -wave basis set.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors Efficient iterative schemes for ab initio total-energy calculations using a plane -wave basis set

Reference 15

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This paper cites Strongly constrained and appropriately normed semilocal density functional.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors Strongly constrained and appropriately normed semilocal density functional

Reference 16

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Observation 7ba18509-4ca0-4298-a096-3c3bc841fc8d · outbound

This paper cites A DFT+U Study on the Stability of Small CuN Clusters (N= 3 –6 Atoms): Calculation of Phonon Frequencies.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors A DFT+U Study on the Stability of Small CuN Clusters (N= 3 –6 Atoms): Calculation of Phonon Frequencies

Reference 17

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Observation df22efd3-8761-4522-a39a-d69a912d6f32 · outbound

This paper cites First -principles calculations and electron density topological analysis of covellite (CuS).

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors First -principles calculations and electron density topological analysis of covellite (CuS)

Reference 18

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Observation 9a548e4f-de6d-47a6-8aad-efa14b975611 · outbound

This paper cites Confinement -driven transitions between topological and Mott phases in (LaNiO3)N/(LaAlO3)M(111) superlattices.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors Confinement -driven transitions between topological and Mott phases in (LaNiO3)N/(LaAlO3)M(111) superlattices

Reference 19

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Observation 086bd0f2-cec3-4ef7-a467-bdfaf9eedd8d · outbound

This paper cites Flat bands promoted by Hund's rule coupling in the candidate double -layer high -temperature superconductor La3Ni2O7 under high pressure.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors Flat bands promoted by Hund's rule coupling in the candidate double -layer high -temperature superconductor La3Ni2O7 under high pressure

Reference 20

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Observation 3f865a0d-6726-46f1-8ed7-0ce2a85ebb38 · outbound

This paper cites Electronic structure of superconducting nickelates probed by resonant photoemission spectroscopy.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors Electronic structure of superconducting nickelates probed by resonant photoemission spectroscopy

Reference 21

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This paper cites VESTA 3 for three -dimensional visualization of crystal, volumetric and morphology data.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors VESTA 3 for three -dimensional visualization of crystal, volumetric and morphology data

Reference 22

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Observation 50e3d013-b9d1-48f7-8bde-2aa68beb6e38 · outbound

This paper cites Electrodeposition of Cu2NiSnS4 absorber layer on Mn-Doped Cu₂NiXY₄ Chalcogenides Functional Thin Films and Energy Materials, 2026, Vol.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors Electrodeposition of Cu2NiSnS4 absorber layer on Mn-Doped Cu₂NiXY₄ Chalcogenides Functional Thin Films and Energy Materials, 2026, Vol

Reference 23

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Observation 6851958c-0d76-40f4-a0b2-2b4b24ea5cf3 · outbound

This paper cites Structural, electronic, and optical properties of Cu2NiSnS4: a combined experimental and theoretical study toward photovoltaic applications.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors Structural, electronic, and optical properties of Cu2NiSnS4: a combined experimental and theoretical study toward photovoltaic applications

Reference 24

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Observation 1e71fb0a-1658-4b44-bf54-da588b605bc9 · outbound

This paper cites Experimental and theoretical study of new kesterite Cu2NiGeS4 thin film synthesized via spray ultrasonic technic.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors Experimental and theoretical study of new kesterite Cu2NiGeS4 thin film synthesized via spray ultrasonic technic

Reference 25

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Observation b58eb438-a888-497e-b461-ee51967756d4 · outbound

This paper cites Development of Cu2NiSnSe4 Nanocrystals: Effects of Annealing on Structural and Electrical Properties.

First-principles Study of Structural and Electronic Properties of Mn-doped Cu2NiXY4 (X=Sn, Ge, Si; Y=S, Se) Chalcogenide Semiconductors Development of Cu2NiSnSe4 Nanocrystals: Effects of Annealing on Structural and Electrical Properties

Reference 26

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