Paper Citation Record · LEDGER

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data

As of 16 August 2026, this Paper Citation Record lists 37 of 37 outbound references and 0 inbound Pith citation observations for arXiv:2608.12692.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2608.12692 v1

Coverage vector

measured 37 of 37 reference resolution

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Source: paper_references, paper_reference_links, observed 2026-08-16T04:34:08.340412Z

measured 37 of 37 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-16T06:30:59.297886+00:00

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Pith citing papers itemized under the disclosed page cap.

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Reference resolution

37 of 37 outbound references displayed

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verified fuzzy15
unresolved11
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External citation measurements

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Outbound references

Observation f3e71caf-a15e-4ad8-ab22-5b6a97baa50d · outbound

This paper cites Cryo -CMOS Circuits and Systems for Quantum Computing Applications,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Cryo -CMOS Circuits and Systems for Quantum Computing Applications,

Reference 1

Resolution: unresolved; no resolver link, observed 2026-08-16T04:34:08.232098Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 6f996528-8df4-4d92-b7e4-43b5ce65caae · outbound

This paper cites Self-blinking Dyes unlock High-order and Multi-plane Super-resolution Optical Fluctuation Imaging.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Self-blinking Dyes unlock High-order and Multi-plane Super-resolution Optical Fluctuation Imaging

Reference 2

Resolution: metadata mismatch; local_arxiv, observed 2026-08-16T04:34:09.248612Z

Source-reported events for the cited work

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Observation 88441f71-288b-4da3-a3f5-4a47adbc0439 · outbound

This paper cites Cryogenic computer architecture modeling with memory -side case studies,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Cryogenic computer architecture modeling with memory -side case studies,

Reference 3

Resolution: unresolved; no resolver link, observed 2026-08-16T04:34:08.239326Z

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Observation 96b4cf4a-6510-4391-abf8-a99d01f3b8c8 · outbound

This paper cites Cryogenic MOS Transistor Model,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Cryogenic MOS Transistor Model,

Reference 4

Resolution: unresolved; no resolver link, observed 2026-08-16T04:34:08.242437Z

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Observation 286232a3-4b9c-45d0-8350-5a40309dc3dd · outbound

This paper cites Deep -Cryogenic Voltage References in 40 -nm CMOS,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Deep -Cryogenic Voltage References in 40 -nm CMOS,

Reference 5

Resolution: unresolved; no resolver link, observed 2026-08-16T04:34:08.245349Z

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Observation 28ed8bd1-ea39-4d75-a748-b0f4ff59919a · outbound

This paper cites TCAD as an Integral Part of the Semiconductor Manufacturing Environment,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data TCAD as an Integral Part of the Semiconductor Manufacturing Environment,

Reference 6

Resolution: metadata mismatch; raw_fallback, observed 2026-08-16T04:34:09.056991Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation ddabaaf5-1424-413d-aa84-f932db9a5833 · outbound

This paper cites MOS device modeling at 77 K,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data MOS device modeling at 77 K,

Reference 7

Resolution: verified exact; doi, observed 2026-08-16T04:34:08.405564Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation fd75bc48-725f-4b13-b35d-23bfe627f8f8 · outbound

This paper cites Simulation of Silicon Nanodevices at Cryogenic Temperatures for Quantum Computing,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Simulation of Silicon Nanodevices at Cryogenic Temperatures for Quantum Computing,

Reference 8

Resolution: verified fuzzy; raw_fallback, observed 2026-08-16T04:34:09.469987Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 3e4be5f7-1592-4f9e-99a8-83e5cef38682 · outbound

This paper cites Calibrated Si Mobility and Incomplete Ionizatio n Models with Field Dependent Ionization Energy for Cryogenic Simulations,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Calibrated Si Mobility and Incomplete Ionizatio n Models with Field Dependent Ionization Energy for Cryogenic Simulations,

Reference 9

Resolution: unresolved; no resolver link, observed 2026-08-16T04:34:08.257245Z

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Observation 1dae68d1-70d1-4bbc-aa24-928a50de4689 · outbound

This paper cites Cryogenic Electron Mobility and Sub-threshold Slope of Oxygen- Inserted (OI) Si Channel nMOSFETs,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Cryogenic Electron Mobility and Sub-threshold Slope of Oxygen- Inserted (OI) Si Channel nMOSFETs,

Reference 10

Resolution: verified exact; raw_fallback, observed 2026-08-16T04:34:08.934582Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 6ac55c65-1ec3-4dce-b010-0d94bec61edd · outbound

This paper cites Electron and Hole Surface Roughness Scattering - Limited Mobilities in Oxygen-Inserted (OI) Si Channel,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Electron and Hole Surface Roughness Scattering - Limited Mobilities in Oxygen-Inserted (OI) Si Channel,

Reference 11

Resolution: verified exact; doi, observed 2026-08-16T04:34:08.395119Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation f18ce11a-fde3-4ef2-8063-b03ad6f1567a · outbound

This paper cites A Wide Temperature Range Unified Undoped Bulk Silicon Electron and Hole Mobility Model,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data A Wide Temperature Range Unified Undoped Bulk Silicon Electron and Hole Mobility Model,

Reference 12

Resolution: unresolved; no resolver link, observed 2026-08-16T04:34:08.266489Z

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Observation 1e07dbd5-a469-4c37-8c46-dc9f7be3bc0d · outbound

This paper cites Physics, Compact Modeling and TCAD of SiGe HBT for Wide Temperature Range Operation,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Physics, Compact Modeling and TCAD of SiGe HBT for Wide Temperature Range Operation,

Reference 13

Resolution: verified fuzzy; raw_fallback, observed 2026-08-16T04:34:09.461225Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation e3565afb-b308-4fff-8f47-4a8bbaa9a1c0 · outbound

This paper cites Revised theoretical limit of subthreshold swing in field-effect transistors.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Revised theoretical limit of subthreshold swing in field-effect transistors

Reference 14

Resolution: unresolved; no resolver link, observed 2026-08-16T04:34:08.271975Z

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Observation 463ed6f0-32c5-47b0-b760-02c1037a7b63 · outbound

This paper cites Theoretical Limit of Low Temperature Sub-threshold Swing in Field -Effect Transistors,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Theoretical Limit of Low Temperature Sub-threshold Swing in Field -Effect Transistors,

Reference 15

Resolution: unresolved; no resolver link, observed 2026-08-16T04:34:08.275257Z

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Observation 58db76d3-c97d-4ba5-a655-be4422302b68 · outbound

This paper cites Study of Cryogenic MOSFET Sub -Threshold Swing Using Ab Initio Calculation,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Study of Cryogenic MOSFET Sub -Threshold Swing Using Ab Initio Calculation,

Reference 16

Resolution: unresolved; no resolver link, observed 2026-08-16T04:34:08.277987Z

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Observation 52085ece-4311-4745-93db-2346d40eb2fc · outbound

This paper cites Characterization and modeling of 28- nm bulk cmos technology down to 4.2 k,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Characterization and modeling of 28- nm bulk cmos technology down to 4.2 k,

Reference 17

Resolution: verified fuzzy; raw_fallback, observed 2026-08-16T04:34:09.452987Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 0bb648f9-12fc-4f92-a9d5-b0278e39d363 · outbound

This paper cites TCAD Modeling of Cryogenic nMOSFET ON- State Current and Sub-threshold Slope,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data TCAD Modeling of Cryogenic nMOSFET ON- State Current and Sub-threshold Slope,

Reference 18

Resolution: verified exact; raw_fallback, observed 2026-08-16T04:34:08.680447Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation adef774c-6d10-4ed7-896d-ddfbf33aee61 · outbound

This paper cites Ro bust Cryogenic Ab- initio Quantum Transport Simulation for LG=10nm Nanowire,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Ro bust Cryogenic Ab- initio Quantum Transport Simulation for LG=10nm Nanowire,

Reference 19

Resolution: unresolved; no resolver link, observed 2026-08-16T04:34:08.286110Z

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Observation 5c67c42f-77db-454d-961f-ff6078ce8315 · outbound

This paper cites Cryogenic Behaviors of 65nm Transistor: On- State IV and Parameters,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Cryogenic Behaviors of 65nm Transistor: On- State IV and Parameters,

Reference 20

Resolution: verified exact; raw_fallback, observed 2026-08-16T04:34:08.563095Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation fb4e20f6-8451-476e-bde4-c4d16b9a7f35 · outbound

This paper cites an unresolved cited work.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Unresolved cited work

Reference 21

Resolution: unresolved; raw_fallback, observed 2026-08-16T04:34:09.444996Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation a288c9fb-4f5c-4b21-ab63-f8a4313efd84 · outbound

This paper cites Statistical comparisons of data on bandgap narrowing in heavily doped silicon: Electrical and optical measurements,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Statistical comparisons of data on bandgap narrowing in heavily doped silicon: Electrical and optical measurements,

Reference 22

Resolution: verified fuzzy; raw_fallback, observed 2026-08-16T04:34:09.436760Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 015de05c-15e2-4e45-921d-d8216cee9288 · outbound

This paper cites Statistical Cryogenic Characterization of Commercial 14nm FinFETs for Analog Applications,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Statistical Cryogenic Characterization of Commercial 14nm FinFETs for Analog Applications,

Reference 23

Resolution: verified fuzzy; raw_fallback, observed 2026-08-16T04:34:09.428732Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 8211fcbe-59ed-4589-ba00-c825e9977e6e · outbound

This paper cites Thomas -Fermi Approach to Impure Semiconductor Band Structure,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Thomas -Fermi Approach to Impure Semiconductor Band Structure,

Reference 24

Resolution: verified fuzzy; raw_fallback, observed 2026-08-16T04:34:09.419636Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation fb889549-6123-4aea-a347-6143f6985a8b · outbound

This paper cites Macroscopic physics of the silicon inversion layer,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Macroscopic physics of the silicon inversion layer,

Reference 25

Resolution: verified fuzzy; raw_fallback, observed 2026-08-16T04:34:09.410084Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation c9383cdf-c1f8-413f-8a0d-eb3acb48104d · outbound

This paper cites Quantum correction to the equation of state of an electron gas in a semiconductor,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Quantum correction to the equation of state of an electron gas in a semiconductor,

Reference 26

Resolution: verified fuzzy; raw_fallback, observed 2026-08-16T04:34:09.400547Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 033cc261-b99b-426a-9734-f27b86d447de · outbound

This paper cites An Improved Electron and Hole Mobility Model for General Purpose Device Simulation,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data An Improved Electron and Hole Mobility Model for General Purpose Device Simulation,

Reference 27

Resolution: verified fuzzy; raw_fallback, observed 2026-08-16T04:34:09.391097Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation afbb74dc-b9ff-49ca-9383-f3acf2474e97 · outbound

This paper cites A Unified Mobility Model for Device Simulation — I. Model Equations and Concentration Dependence,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data A Unified Mobility Model for Device Simulation — I. Model Equations and Concentration Dependence,

Reference 28

Resolution: verified fuzzy; raw_fallback, observed 2026-08-16T04:34:09.380111Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 390f4835-3135-4b0a-8ed4-8c5d94b80e87 · outbound

This paper cites A Physically Based Mobility Model for Numerical Simulation of Nonplanar Devices,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data A Physically Based Mobility Model for Numerical Simulation of Nonplanar Devices,

Reference 29

Resolution: verified fuzzy; raw_fallback, observed 2026-08-16T04:34:09.368556Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation e71211be-ef63-459f-9277-3dd229b94ad2 · outbound

This paper cites The hot-electron problem in small semiconductor devices,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data The hot-electron problem in small semiconductor devices,

Reference 30

Resolution: verified fuzzy; raw_fallback, observed 2026-08-16T04:34:09.356973Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation dd38cb5a-1a9b-4323-94fc-f953e0aa3669 · outbound

This paper cites TCAD Simulation Models, Parameters, and Methodologies for beta -Ga2O3 Power Devices,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data TCAD Simulation Models, Parameters, and Methodologies for beta -Ga2O3 Power Devices,

Reference 31

Resolution: malformed identifier; doi_truncated, observed 2026-08-16T04:34:08.383984Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation b61c4ba7-9492-4450-9372-24d14aa3af7f · outbound

This paper cites Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon,

Reference 32

Resolution: verified exact; raw_fallback, observed 2026-08-16T04:34:08.487884Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 438852c1-b649-4329-b40f-ec89bac3efd5 · outbound

This paper cites Electron and Hole Drift Velocity Measurements in Silicon and Their Empirical Relation to Electric Field and Temperature,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Electron and Hole Drift Velocity Measurements in Silicon and Their Empirical Relation to Electric Field and Temperature,

Reference 33

Resolution: verified fuzzy; raw_fallback, observed 2026-08-16T04:34:09.346252Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 70b62363-ef17-4f75-a0b6-2832bbb767c0 · outbound

This paper cites Scattering mechanism and low temperature mobility of MOS inversion layers,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Scattering mechanism and low temperature mobility of MOS inversion layers,

Reference 34

Resolution: verified fuzzy; raw_fallback, observed 2026-08-16T04:34:09.335304Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation bf68187c-91e7-4d79-a9a0-2494952e2b60 · outbound

This paper cites On the university of inversion-layer mobility in Si MOSFET’s —Part I: Effects of substrate impurity concentration,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data On the university of inversion-layer mobility in Si MOSFET’s —Part I: Effects of substrate impurity concentration,

Reference 35

Resolution: verified fuzzy; raw_fallback, observed 2026-08-16T04:34:09.323729Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation f1adbbc3-bd01-4f28-95b8-0fa7ac360425 · outbound

This paper cites A review of some charge transport properties of silicon,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data A review of some charge transport properties of silicon,

Reference 36

Resolution: malformed identifier; no resolver link, observed 2026-08-16T04:34:08.337255Z

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Unavailable: canonical work link unavailable.

Observation 751d7dec-f984-4e0d-9933-97f3c6f09e88 · outbound

This paper cites Lattice scattering mobility of n - inversion layers in si(100) at low temperatures,.

TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data Lattice scattering mobility of n - inversion layers in si(100) at low temperatures,

Reference 37

Resolution: malformed identifier; no resolver link, observed 2026-08-16T04:34:08.340412Z

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Unavailable: canonical work link unavailable.

Pith citing papers

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