Paper Citation Record · LEDGER

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O

As of 17 August 2026, this Paper Citation Record lists 19 of 19 outbound references and 0 inbound Pith citation observations for arXiv:2607.08667.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2607.08667 v1

Coverage vector

measured 19 of 19 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-07-10T03:37:06.018002Z

measured 19 of 19 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-17T06:30:58.91139+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

19 of 19 outbound references displayed

verified exact0
verified fuzzy16
unresolved3
parse uncertain0
malformed identifier0
metadata mismatch0

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation 66f45175-63a3-4a76-8dbb-b6c5c9793422 · outbound

This paper cites Room- temperature fabrication of transparent ﬂexible thin-ﬁlm transist ors using amorphous oxide semiconductors.

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O Room- temperature fabrication of transparent ﬂexible thin-ﬁlm transist ors using amorphous oxide semiconductors

Reference 1

Resolution: verified fuzzy; raw_fallback, observed 2026-07-10T04:06:45.536329Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 98e85edf-c69f-440a-a8e1-bc2a6e57d0f2 · outbound

This paper cites H.; Chasin, A.; Fantini, A.; Dekkers, H.; Mao, M.; Nag, M .; Mertens, S.; Rao, S.; Jossart, N.; Crotti, D.; Kar, G.

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O H.; Chasin, A.; Fantini, A.; Dekkers, H.; Mao, M.; Nag, M .; Mertens, S.; Rao, S.; Jossart, N.; Crotti, D.; Kar, G

Reference 2

Resolution: verified fuzzy; raw_fallback, observed 2026-07-10T04:06:45.538137Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation bd8c9535-a8b1-4289-9e45-628c361db6a1 · outbound

This paper cites J.; Kljucar, L .; Mao, M.; Puliyalil, H.; Pak, M.; Teugels, L.; Tsvetanova, D.; Banerjee, K.; Souria u, L.; Tokei, Z.; Goux, L.; Kar, G.

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O J.; Kljucar, L .; Mao, M.; Puliyalil, H.; Pak, M.; Teugels, L.; Tsvetanova, D.; Banerjee, K.; Souria u, L.; Tokei, Z.; Goux, L.; Kar, G

Reference 3

Resolution: verified fuzzy; raw_fallback, observed 2026-07-10T04:06:45.533597Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation ec6ef79c-37ea-42ac-b9db-fbdd6a66fd2c · outbound

This paper cites V.; v an Setten, M.

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O V.; v an Setten, M

Reference 4

Resolution: verified fuzzy; raw_fallback, observed 2026-07-10T04:06:45.528458Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation f0c8cf3b-1e1e-4662-b6bb-3bd4b9bfc539 · outbound

This paper cites Memory Char- acteristics of Thin Film Transistor with Catalytic Metal Layer Induce d Crystallized Indium-Gallium-Zinc-Oxide (IGZO) Channel.

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O Memory Char- acteristics of Thin Film Transistor with Catalytic Metal Layer Induce d Crystallized Indium-Gallium-Zinc-Oxide (IGZO) Channel

Reference 5

Resolution: verified fuzzy; raw_fallback, observed 2026-07-10T04:06:45.526844Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation ba6dcc18-7036-4187-bf9a-3a644ab0f1a7 · outbound

This paper cites TFT- Based Near-Sensor In-Memory Computing: Circuits and Architect ure Perspectives of Large-Area eDRAM and ROM CiM Chips.

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O TFT- Based Near-Sensor In-Memory Computing: Circuits and Architect ure Perspectives of Large-Area eDRAM and ROM CiM Chips

Reference 6

Resolution: verified fuzzy; raw_fallback, observed 2026-07-10T04:06:45.530179Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 9d3a7014-f4c1-4239-9b36-1088fa651cf4 · outbound

This paper cites T.; Malmberg, C.

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O T.; Malmberg, C

Reference 7

Resolution: verified fuzzy; raw_fallback, observed 2026-07-10T04:06:45.531846Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 8be0d41e-1db5-4c9d-be05-982dff39745e · outbound

This paper cites Characterizing and Modelling of the BTI Reliability in IGZO-TFT u sing Light-assisted I-V Spectroscopy.

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O Characterizing and Modelling of the BTI Reliability in IGZO-TFT u sing Light-assisted I-V Spectroscopy

Reference 8

Resolution: verified fuzzy; raw_fallback, observed 2026-07-10T04:06:45.521675Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation c7059f4c-e964-4656-bb79-cdc8178d870a · outbound

This paper cites an unresolved cited work.

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O Unresolved cited work

Reference 9

Resolution: unresolved; raw_fallback, observed 2026-07-10T04:06:45.524995Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 64c13954-3578-4eaa-93ac-68b9351170e9 · outbound

This paper cites D.; Putri, M.; Heo, Y.-W.; Lee, H.

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O D.; Putri, M.; Heo, Y.-W.; Lee, H

Reference 10

Resolution: verified fuzzy; raw_fallback, observed 2026-07-10T04:06:45.535337Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 69746cd9-b33f-42c6-85c4-fa43932fd3ab · outbound

This paper cites Enhance- ment on carrier mobility in amorphous indium tin oxynitride (ITON) thin ﬁ lms.

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O Enhance- ment on carrier mobility in amorphous indium tin oxynitride (ITON) thin ﬁ lms

Reference 11

Resolution: verified fuzzy; raw_fallback, observed 2026-07-10T04:06:45.519874Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 529d133d-937d-49f9-a69e-7da9bc8ad97b · outbound

This paper cites J.; Dekkers, H.

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O J.; Dekkers, H

Reference 12

Resolution: verified fuzzy; raw_fallback, observed 2026-07-10T04:06:45.540033Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 7f1b036c-ebd2-4eaa-9515-c417d181fcd1 · outbound

This paper cites T.; H¨ agglund, C.; Bent, S.

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O T.; H¨ agglund, C.; Bent, S

Reference 13

Resolution: verified fuzzy; raw_fallback, observed 2026-07-10T04:16:49.304442Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 12bdcd24-6ab0-4fdc-bd95-f00974615b7e · outbound

This paper cites P.; Burke, K.; Ernzerhof, M.

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O P.; Burke, K.; Ernzerhof, M

Reference 14

Resolution: verified fuzzy; raw_fallback, observed 2026-07-10T04:16:49.299432Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 51433321-378f-4496-882c-f05268c3dbdc · outbound

This paper cites an unresolved cited work.

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O Unresolved cited work

Reference 15

Resolution: unresolved; raw_fallback, observed 2026-07-10T04:06:45.518202Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 7e752e46-329f-419b-9302-bace7cbab41b · outbound

This paper cites an unresolved cited work.

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O Unresolved cited work

Reference 16

Resolution: unresolved; raw_fallback, observed 2026-07-10T04:06:45.513104Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 20ff9bba-a5d3-4494-a7b4-fd452120659d · outbound

This paper cites F.; Els¨ asser, C.

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O F.; Els¨ asser, C

Reference 17

Resolution: verified fuzzy; raw_fallback, observed 2026-07-10T04:06:45.523254Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 5e2b8aa2-cd98-4bcb-8ffd-9d0607b50fc2 · outbound

This paper cites N.; H¨ agglund, C.; Tanskanen, J.

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O N.; H¨ agglund, C.; Tanskanen, J

Reference 18

Resolution: verified fuzzy; raw_fallback, observed 2026-07-10T04:06:45.516343Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation d9e06b0f-f0d2-4e25-bed3-4c4429a29380 · outbound

This paper cites J.; Dekkers, H.

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O J.; Dekkers, H

Reference 19

Resolution: verified fuzzy; raw_fallback, observed 2026-07-10T04:06:45.514775Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Pith citing papers

No inbound Pith citation observations are available.