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Microscopic simulation of xenon-based optical TPCs in the presence of molecular additives

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arxiv 1705.09481 v2 pith:42OWPVLO submitted 2017-05-26 physics.ins-det

C.D.R. Azevedo , D. Gonzalez-Diaz , S. F. Biagi , C.A.B. Oliveira , C.A.O. Henriques , J. Escada , F. Monrabal , J.J. Gómez-Cadenas
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V. Álvarez J. M. Benlloch-Rodríguez F.I.G.M. Borges A. Botas S. Cárcel J. V. Carrión S. Cebrián C.A.N. Conde J. Díaz M. Diesburg R. Esteve R. Felkai L.M.P. Fernandes P. Ferrario A.L. Ferreira E.D.C. Freitas A. Goldschmidt R.M. Gutiérrez J. Hauptman A. I. Hernandez J.A. Hernando Morata V. Herrero B.J.P. Jones L. Labarga A. Laing P. Lebrun I. Liubarsky N. Lopez-March M. Losada J. Martín-Albo A. Martínez A. D. McDonald C.M.B. Monteiro F.J. Mora L.M. Moutinho J. Muñoz Vidal M. Musti M. Nebot-Guinot P. Novella D. Nygren B. Palmeiro A. Para J. Pérez M. Querol J. Renner L. Ripoll J. Rodríguez L. Rogers F.P. Santos J.M.F. dos Santos L. Serra D. Shuman A. Simón C. Sofka M. Sorel T. Stiegler J.F. Toledo J. Torrent Z. Tsamalaidze J.F.C.A. Veloso R. Webb J.T. White N. Yahlali
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keywords simulationadditiveselementaryopticalpresencexenonxenon-basedassociated
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abstract

We introduce a simulation framework for the transport of high and low energy electrons in xenon-based gaseous optical time projection chambers (OTPCs). The simulation relies on elementary cross sections (electron-atom and electron-molecule) and incorporates, in order to compute the gas scintillation, the reaction/quenching rates (atom-atom and atom-molecule) of the first 41 excited states of xenon and the relevant associated excimers, together with their radiative cascade. The results compare positively with observations made in pure xenon and its mixtures with CO$_2$ and CF$_4$ in a range of pressures from 0.1 to 10~bar. This work sheds some light on the elementary processes responsible for the primary and secondary xenon-scintillation mechanisms in the presence of additives, that are of interest to the OTPC technology.

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