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Effects of shallow carbon and deep N++ layer on the radiation hardness of IHEP-IME LGAD sensors

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arxiv 2110.12632 v1 pith:4B5N2LIX submitted 2021-10-25 physics.ins-det hep-ex

Mengzhao Li , Yunyun Fan , Xuewei Jia , Han Cui , Zhijun Liang , Mei Zhao , Tao Yang , Kewei Wu
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Shuqi Li Chengjun Yu Bo Liu Wei Wang Xuan Yang Yuhang Tan Xin Shi J. G. da Costa Yuekun Heng Gaobo Xu Qionghua Zhai Gangping Yan Mingzheng Ding Jun Luo Huaxiang Yin Junfeng Li Alissa Howard Gregor Kramberger
This is my paper · ORCID
classification physics.ins-dethep-ex
keywords carbonihep-imelayerlgadsensorsshallowapplieddeep
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Low Gain Avalanche Diode (LGAD) is applied for the High-Granularity Timing Detector (HGTD), and it will be used to upgrade the ATLAS experiment. The first batch IHEP-IME LGAD sensors were designed by the Institute of High Energy Physics (IHEP) and fabricated by the Institute of Microelectronics (IME). Three IHEP-IME sensors (W1, W7 and W8) were irradiated by the neutrons up to the fluence of 2.5 x 10^15 n_eq/cm^2 to study the effect of the shallow carbon and deep N++ layer on the irradiation hardness. Taking W7 as a reference, W1 has an extra shallow carbon applied, and W8 has a deeper N++ layer.

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