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Paper Citation Record · LEDGER

Transport characterization and quantum dot coupling in commercial 22FDX

As of 19 August 2026, this Paper Citation Record lists 31 of 31 outbound references and 2 inbound Pith citation observations for arXiv:2501.10146.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2501.10146 v1

Coverage vector

measured 31 of 31 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-10T19:28:04.567829Z

measured 33 of 33 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-18T06:34:40.430872+00:00

measured 2 of 2 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links, observed 2026-08-15T19:35:00.832801Z

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: pith, observed 2026-08-06T18:18:49.622515Z

Reference resolution

31 of 31 outbound references displayed

  • verified exact14
  • verified fuzzy0
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  • parse uncertain0
  • malformed identifier0
  • metadata mismatch6

External citation measurements

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Outbound references

Observation 6fd138c1-630a-4ea5-b92e-1caa7269b1cb · outbound

This paper cites IBM releases first-ever 1,000-qubit quantum chip.

Transport characterization and quantum dot coupling in commercial 22FDX IBM releases first-ever 1,000-qubit quantum chip

Reference 1

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Observation 0b3a6fd4-4911-4ee2-9df4-d2792c22a633 · outbound

This paper cites A single-atom electron spin qubit in silicon.

Transport characterization and quantum dot coupling in commercial 22FDX A single-atom electron spin qubit in silicon

Reference 2

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source=pdf_text observed=2026-08-10T19:28:04.430184Z digest=sha256:1d134869b94a8ac1bdd3872cc8c8e966437799092fdd330fa88399cc8f6f8bc8

Observation 1861f437-72fe-4763-a4db-11a86fa9cfd0 · outbound

This paper cites Gate-based high fidelity spin readout in a CMOS device.

Transport characterization and quantum dot coupling in commercial 22FDX Gate-based high fidelity spin readout in a CMOS device

Reference 3

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doi, observed 2026-08-10T19:28:04.884562Z

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Observation 4b93507f-f44b-431d-a81d-33d09605d17e · outbound

This paper cites Probing Low-Frequency Charge Noise in Few-Electron CMOS Quantum Dots.

Transport characterization and quantum dot coupling in commercial 22FDX Probing Low-Frequency Charge Noise in Few-Electron CMOS Quantum Dots

Reference 4

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source=pdf_text observed=2026-08-10T19:28:04.441419Z digest=sha256:d746a5e5512a1a3d49c96368737c10fff3b3d78577b509b279543bfca53d90b1

Observation 4433dd8c-0fe4-4326-8bd9-9be8b1b72c91 · outbound

This paper cites Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K using 3D quantum TCAD simulation.

Transport characterization and quantum dot coupling in commercial 22FDX Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K using 3D quantum TCAD simulation

Reference 5

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Observation ee32edb8-a841-41ac-9a94-5a201abc977a · outbound

This paper cites Rapid cryogenic characterization of 1,024 integrated silicon quantum dot devices.

Transport characterization and quantum dot coupling in commercial 22FDX Rapid cryogenic characterization of 1,024 integrated silicon quantum dot devices

Reference 6

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Observation fe935587-d26c-4ab9-b566-8b7bbcca3321 · outbound

This paper cites Commercial CMOS Process for Quantum Computing: Quantum Dots and Charge Sensing in a 22 nm Fully Depleted Silicon-on-Insulator Process.

Transport characterization and quantum dot coupling in commercial 22FDX Commercial CMOS Process for Quantum Computing: Quantum Dots and Charge Sensing in a 22 nm Fully Depleted Silicon-on-Insulator Process

Reference 7

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local_arxiv, observed 2026-08-10T19:28:04.837064Z

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source=pdf_text observed=2026-08-10T19:28:04.459014Z digest=sha256:8cd2d7ecde1485afff8d5571e820a27a6c89912179e04242044f85b8ec9247cb

Observation 47f42a02-7414-4517-8cd2-a71d2e0aa43f · outbound

This paper cites Investigation of p- and n-Type Quantum Dot Arrays Manufactured in 22-nm FDSOI CMOS at 2–4 K and 300 K.

Transport characterization and quantum dot coupling in commercial 22FDX Investigation of p- and n-Type Quantum Dot Arrays Manufactured in 22-nm FDSOI CMOS at 2–4 K and 300 K

Reference 8

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source=pdf_text observed=2026-08-10T19:28:04.464430Z digest=sha256:168b2b4acfcf49a4685e8876a8327d7132c08eef30733d33c8d7b3587bc73a8d

Observation 4212c6a3-d422-4b8d-9643-5870f5f5f5a7 · outbound

This paper cites Carrier transport in HfO2 metal gate MOSFETs: physical insight into critical parameters.

Transport characterization and quantum dot coupling in commercial 22FDX Carrier transport in HfO2 metal gate MOSFETs: physical insight into critical parameters

Reference 9

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source=pdf_text observed=2026-08-10T19:28:04.468858Z digest=sha256:f5717e34341b22e2f10c53ee7a95582cad14d0144bbbfa3d7aaa55e0a7fc349d

Observation 0f2a5808-5cf7-46fc-a3e4-1e83fd61feb6 · outbound

This paper cites A CMOS silicon spin qubit.

Transport characterization and quantum dot coupling in commercial 22FDX A CMOS silicon spin qubit

Reference 10

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source=pdf_text observed=2026-08-10T19:28:04.473092Z digest=sha256:05e2e1e5a9bc5bb42f8aefe9da3450529f1136aae1a17ec0659394585321b741

Observation 42b0f1ee-53b1-479c-aa34-f098daf98cc2 · outbound

This paper cites Parity and Singlet-Triplet High-Fidelity Readout in a Silicon Double Quantum Dot at 0.5 K.

Transport characterization and quantum dot coupling in commercial 22FDX Parity and Singlet-Triplet High-Fidelity Readout in a Silicon Double Quantum Dot at 0.5 K

Reference 11

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source=pdf_text observed=2026-08-10T19:28:04.477439Z digest=sha256:0a381e9a20ed1c16c015a9877a6eb3205768f89e54e01fcf6d52a3e3c7f8da8d

Observation 17510cd1-fd76-4365-8b7b-3fc397dcb90f · outbound

This paper cites Density Gradient calibration for 2D quantum confinement: Tri- Gate SOI transistor application.

Transport characterization and quantum dot coupling in commercial 22FDX Density Gradient calibration for 2D quantum confinement: Tri- Gate SOI transistor application

Reference 12

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source=pdf_text observed=2026-08-10T19:28:04.482250Z digest=sha256:78b8b48c4d3a098c974ea8f34db013a776dad0640c80e5d367e617655c7ece1a

Observation fcbede09-17d1-4795-a264-27ad255cfa95 · outbound

This paper cites Gate stack technology for nanoscale devices.

Transport characterization and quantum dot coupling in commercial 22FDX Gate stack technology for nanoscale devices

Reference 13

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Observation 48f551c7-55d6-4468-bf1b-462523339f2b · outbound

This paper cites Transport characterization of CMOS-based devices fabricated with isotopically-enriched 28Si for spin qubit applications.

Transport characterization and quantum dot coupling in commercial 22FDX Transport characterization of CMOS-based devices fabricated with isotopically-enriched 28Si for spin qubit applications

Reference 14

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Observation 2f8ecb0f-c726-4d37-967b-4cd780560559 · outbound

This paper cites Effective field and universal mobility in high-k metal gate UTBB- FDSOI devices.

Transport characterization and quantum dot coupling in commercial 22FDX Effective field and universal mobility in high-k metal gate UTBB- FDSOI devices

Reference 15

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source=pdf_text observed=2026-08-10T19:28:04.496007Z digest=sha256:1a9f13871bce5d79925430fdf02250371c6a9905be7dfb2bc08c44c9337e5abc

Observation bbe799d3-ed66-4aa0-9b88-71e9d92aef6b · outbound

This paper cites Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance.

Transport characterization and quantum dot coupling in commercial 22FDX Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance

Reference 16

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source=pdf_text observed=2026-08-10T19:28:04.500420Z digest=sha256:648f24d20f1f2d719f6a1a4b740d4ba02adc6bbff865c200fef5fdd445fc6feb

Observation b4a190e2-3b34-4ee7-be1a-12226066a347 · outbound

This paper cites Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K.

Transport characterization and quantum dot coupling in commercial 22FDX Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

Reference 17

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Observation 01653182-29af-416c-9f71-58503c88de24 · outbound

This paper cites Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature.

Transport characterization and quantum dot coupling in commercial 22FDX Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature

Reference 18

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Observation 819f7c42-2569-41ce-881b-bf74ab547e75 · outbound

This paper cites On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration.

Transport characterization and quantum dot coupling in commercial 22FDX On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

Reference 19

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source=pdf_text observed=2026-08-10T19:28:04.513214Z digest=sha256:00553ea085de974ff6cc7719fb05588b02b8b769bb041a3a5abefc2fe27fc846

Observation 3c5d3c02-e91e-45a2-8686-79ca85f23623 · outbound

This paper cites Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors.

Transport characterization and quantum dot coupling in commercial 22FDX Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

Reference 20

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Observation 3424af7d-1ad5-4894-9e16-e1b28b5f0cfb · outbound

This paper cites Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films.

Transport characterization and quantum dot coupling in commercial 22FDX Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films

Reference 21

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Observation 77f7f1d5-c301-4241-a931-376058cec6ed · outbound

This paper cites Electrical manipulation of a single electron spin in CMOS using a micromagnet and spin-valley coupling.

Transport characterization and quantum dot coupling in commercial 22FDX Electrical manipulation of a single electron spin in CMOS using a micromagnet and spin-valley coupling

Reference 22

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source=pdf_text observed=2026-08-10T19:28:04.526071Z digest=sha256:53db98543f1d3c1e5c7706c35126a69092ffa65e1650b931aa8cb8d738677ae7

Observation 7bb283b1-66eb-49c4-8747-fa653b35e175 · outbound

This paper cites Probing single electrons across 300 mm spin qubit wafers.

Transport characterization and quantum dot coupling in commercial 22FDX Probing single electrons across 300 mm spin qubit wafers

Reference 23

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source=pdf_text observed=2026-08-10T19:28:04.530272Z digest=sha256:5d4b5eebffd09eb3c7e276d654d1b9f50590cd60b4513efe84bf030f0b5dfdab

Observation 99cbe9b8-18cb-4828-9365-da41c2ed3b78 · outbound

This paper cites Quantum-wire effects in trigate SOI MOSFETs.

Transport characterization and quantum dot coupling in commercial 22FDX Quantum-wire effects in trigate SOI MOSFETs

Reference 24

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Observation 9a26ed79-e8d1-4465-aa8b-cd1431b60724 · outbound

This paper cites Quantum dots.

Transport characterization and quantum dot coupling in commercial 22FDX Quantum dots

Reference 25

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No event found in the named queried sources as of 2026-08-18T06:34:40.430872+00:00.

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Observation fc7f64f0-bedd-4780-a667-ad6026d69682 · outbound

This paper cites Single Charge Tunneling: Coulomb Blockade Phenomena in Nanostructures.

Transport characterization and quantum dot coupling in commercial 22FDX Single Charge Tunneling: Coulomb Blockade Phenomena in Nanostructures

Reference 26

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source=pdf_text observed=2026-08-10T19:28:04.544565Z digest=sha256:96e5fe74ae36dff4367c99d55f1f961153201787908ca0185020591400dc5b58

Observation 90e0d9a0-471f-4b4b-8093-66eeb3487eb9 · outbound

This paper cites Electron Transport in Quantum Dots.

Transport characterization and quantum dot coupling in commercial 22FDX Electron Transport in Quantum Dots

Reference 27

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source=pdf_text observed=2026-08-10T19:28:04.549023Z digest=sha256:cbfa6ba45c9abc6e246da0dea7987ce759a528b61fc59665b5043120456a244d

Observation c1327b3b-0b5f-4ad4-a62f-58c73ed4da88 · outbound

This paper cites Transport properties of quantum dots with steep walls.

Transport characterization and quantum dot coupling in commercial 22FDX Transport properties of quantum dots with steep walls

Reference 28

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No event found in the named queried sources as of 2026-08-18T06:34:40.430872+00:00.

source=pdf_text observed=2026-08-10T19:28:04.553537Z digest=sha256:76c7d4ead523d321781a42f544afe954b0a53ac9e217bcbfd28fb1b64f5341c5

Observation c2f80bdd-a31b-4d4d-b82c-e7b02702eed7 · outbound

This paper cites Electron transport through double quantum dots.

Transport characterization and quantum dot coupling in commercial 22FDX Electron transport through double quantum dots

Reference 29

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source=pdf_text observed=2026-08-10T19:28:04.558398Z digest=sha256:89f6c6132116a06c9eaf1a7fdb6c2c864a0f87a770e3033804381b6009570a39

Observation 378cc80b-f5ee-488f-8ece-9fb81c8b32f3 · outbound

This paper cites Specificities of linear Si QD arrays integration and characterization.

Transport characterization and quantum dot coupling in commercial 22FDX Specificities of linear Si QD arrays integration and characterization

Reference 30

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source=pdf_text observed=2026-08-10T19:28:04.563092Z digest=sha256:fbddb429cd2ec9f6cabfb8ac100e1a03fdd153d4f191733986b884dca333b1c5

Observation 67e36591-c875-4bf9-a4ae-643c3d08e4f4 · outbound

This paper cites Effect of selective doping on the spatial dispersion of donor-induced quantum dots in Si nanoscale transistors.

Transport characterization and quantum dot coupling in commercial 22FDX Effect of selective doping on the spatial dispersion of donor-induced quantum dots in Si nanoscale transistors

Reference 31

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source=pdf_text observed=2026-08-10T19:28:04.567829Z digest=sha256:9bc93b891760e9a0f37b858128594996b2c415fb233a329cbad1b82694e12a83

Pith citing papers

Observation 7d5c910a-00b9-446f-b531-7cb6bd894eb2 · inbound

Scalable quantum current source on commercial CMOS process technology cites this paper.

Scalable quantum current source on commercial CMOS process technology Transport characterization and quantum dot coupling in commercial 22FDX

Reference 39

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source=pdf_text observed=2026-08-15T19:35:00.832801Z digest=sha256:cde7794c4ab8cb9d680b282a57408a02cc0da81b5fcb5a1ca84a53d653deb9f7

Observation 6a40403a-d68f-4aa0-adee-2d1bb157f435 · inbound

Simulated non-Markovian Noise Resilience of Silicon-Based Spin Qubits with Surface Code Error Correction cites this paper.

Simulated non-Markovian Noise Resilience of Silicon-Based Spin Qubits with Surface Code Error Correction Transport characterization and quantum dot coupling in commercial 22FDX

Reference 77

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local_arxiv, observed 2026-08-06T18:18:49.789039Z

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No event found in the named queried sources as of 2026-08-18T06:34:40.430872+00:00.

source=pdf_text observed=2026-08-06T18:18:49.440412Z digest=sha256:c58df9e44c2abe1bea4ed135894f696f80e24d8140f35133e0978d516d150c72