Typed states for the displayed outbound observations.
Source: paper_references, paper_reference_links, observed 2026-08-07T12:27:43.554552Z
Paper Citation Record · LEDGER
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations
As of 7 August 2026, this Paper Citation Record lists 56 of 56 outbound references and 0 inbound Pith citation observations for arXiv:2505.24468.
A citation records a reference. It does not transfer a finding from one paper to another.
Coverage vector
One-hop event checks from named stored sources.
Source: scholarly_work_events, retraction_status_cache, observed 2026-08-07T06:34:17.273281+00:00
Pith citing papers itemized under the disclosed page cap.
Source: paper_references, paper_reference_links
A source-named dated measurement, never combined with another source.
Source: cited_works
Reference resolution
56 of 56 outbound references displayed
- verified exact0
- verified fuzzy50
- unresolved6
- parse uncertain0
- malformed identifier0
- metadata mismatch0
External citation measurements
No source-named external measurement is stored.
Outbound references
Observation 6a2a777a-888c-49ed-a90e-4c8a5308638a · outbound
This paper cites Y.; Govoreanu, B.; Goux, L.; Degraeve, R.; Fantini, A.; Kar, G.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Y.; Govoreanu, B.; Goux, L.; Degraeve, R.; Fantini, A.; Kar, G
Reference 1
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:57.032226Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation e9e430b6-a0be-42a0-aa3d-8982f21043d1 · outbound
This paper cites B.; Lee, D.; Lee, S.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations B.; Lee, D.; Lee, S
Reference 2
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:56.888612Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation b4c6334f-fbd5-48e6-b64a-6f3e66c6f178 · outbound
This paper cites an unresolved cited work.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Unresolved cited work
Reference 3
- Resolution
- unresolved
- raw_fallback, observed 2026-08-07T12:27:56.678539Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 99a233d0-01f7-4faf-9b08-c9b6109cf375 · outbound
This paper cites Nanoionic memristive phenomena in metal oxides: the valence change mechanism.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Nanoionic memristive phenomena in metal oxides: the valence change mechanism
Reference 4
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:56.502638Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 8f4c3118-ba0e-40c9-a55d-036c50bccf21 · outbound
This paper cites M.; Li, D.; Cullen, D.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations M.; Li, D.; Cullen, D
Reference 5
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:56.289242Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation faff2811-dd7b-4af5-b9b8-9d567c49f1de · outbound
This paper cites Transport properties of oxygen vacancy filaments in metal/crystalline or amorphous HfO 2/metal structures.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Transport properties of oxygen vacancy filaments in metal/crystalline or amorphous HfO 2/metal structures
Reference 6
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:56.115622Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 5359678f-14b4-4382-a2a1-6a77297b12d1 · outbound
This paper cites M.; Th¨ oner, B.; Sch¨ onhals, A.; Menzel, S.; Wuttig, M.; Waser, R.; Sobolev, N.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations M.; Th¨ oner, B.; Sch¨ onhals, A.; Menzel, S.; Wuttig, M.; Waser, R.; Sobolev, N
Reference 7
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:55.933415Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 422e37e7-05fd-442c-a11a-fbbafe47f22a · outbound
This paper cites M.; Th¨ oner, B.; Sch¨ onhals, A.; Menzel, S.; Meledin, A.; Barradas, N.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations M.; Th¨ oner, B.; Sch¨ onhals, A.; Menzel, S.; Meledin, A.; Barradas, N
Reference 8
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:55.675777Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 41559705-0f3e-4964-a342-a9dea2703cd7 · outbound
This paper cites A.; Cullen, D.
Reference 9
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:55.496767Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 20b86142-3de7-4fbf-a263-590710e3f8c7 · outbound
This paper cites L.; Islam, M.
Reference 10
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:55.262195Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation eddbff37-a897-4908-bc87-3835500e4dd6 · outbound
This paper cites A.; Goodwill, J.
Reference 11
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:55.064646Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation c0a1a357-5b87-4c0a-be23-d5ab3775452f · outbound
This paper cites B.; Huang, X.; Zhang, W.; Zhang, Q.; Deng, N.; Shi, L.; Wong, H.-S.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations B.; Huang, X.; Zhang, W.; Zhang, Q.; Deng, N.; Shi, L.; Wong, H.-S
Reference 12
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:54.777887Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation c6332950-f80c-4d51-96d2-2d3573d60e7e · outbound
This paper cites Improved synaptic behavior under identical pulses using AlO x/HfO 2 bilayer RRAM array for neuromor- phic systems.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Improved synaptic behavior under identical pulses using AlO x/HfO 2 bilayer RRAM array for neuromor- phic systems
Reference 13
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:54.474978Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 309a2d00-c390-4d2d-b638-e2e97e6cc2bb · outbound
This paper cites Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior
Reference 14
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:54.096425Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation fbba2c75-642c-47f2-adea-78a7aafe2fc2 · outbound
This paper cites Advanced electronic ma- terials 2022, 8, 2200448.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Advanced electronic ma- terials 2022, 8, 2200448
Reference 15
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:53.690401Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation a5c362d7-72e1-4069-9ad8-312703229c90 · outbound
This paper cites J.; Carta, F.; Horst, F.; Falcone, D.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations J.; Carta, F.; Horst, F.; Falcone, D
Reference 16
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:53.358035Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 626699e2-4526-45c1-802f-f42816efd49f · outbound
This paper cites B.; Zhang, W.; Wu, D.; Deiss, S.; 31 Raina, P.; Qian, H.; Gao, B.; others A compute-in-memory chip based on resistive random-access memory.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations B.; Zhang, W.; Wu, D.; Deiss, S.; 31 Raina, P.; Qian, H.; Gao, B.; others A compute-in-memory chip based on resistive random-access memory
Reference 17
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:53.040081Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation a556c832-eedb-4ad0-a682-007223bcfb4a · outbound
This paper cites an unresolved cited work.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Unresolved cited work
Reference 18
- Resolution
- unresolved
- raw_fallback, observed 2026-08-07T12:27:52.755519Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation a9ad6f2e-7d50-42b1-aafe-0fe2f2aa9d35 · outbound
This paper cites F.; La Porta, A.; Jubin, D.; Offrein, B.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations F.; La Porta, A.; Jubin, D.; Offrein, B
Reference 19
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:52.489326Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 0dbb7b3c-58d4-48ef-8940-36116acdd756 · outbound
This paper cites Oscillatory neural networks for edge ai computing.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Oscillatory neural networks for edge ai computing
Reference 20
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:52.211846Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 25f6b130-0f9b-4a93-a8ce-0fe48256695a · outbound
This paper cites Computing with oscillators from theoretical underpinnings to applications and demonstrators.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Computing with oscillators from theoretical underpinnings to applications and demonstrators
Reference 21
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:51.914627Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 842e0d4f-5600-4e34-9d80-f68c671acfe0 · outbound
This paper cites All-in-One Analog AI Hardware: On-Chip Training and Inference with Conductive-Metal-Oxide/HfOx ReRAM Devices.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations All-in-One Analog AI Hardware: On-Chip Training and Inference with Conductive-Metal-Oxide/HfOx ReRAM Devices
Reference 22
- Resolution
- unresolved
- no resolver link, observed 2026-08-07T12:27:40.503413Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 402a4b9b-ced2-4528-8b5f-20bd88d225bd · outbound
This paper cites F.; Menzel, S.; La Porta, A.; Stecconi, T.; Choi, W.; Of- frein, B.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations F.; Menzel, S.; La Porta, A.; Stecconi, T.; Choi, W.; Of- frein, B
Reference 23
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:51.638376Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 2e0143b6-0160-49ac-b80b-b2304cc351b0 · outbound
This paper cites F.; Menzel, S.; Stecconi, T.; Galetta, M.; La Porta, A.; Offrein, B.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations F.; Menzel, S.; Stecconi, T.; Galetta, M.; La Porta, A.; Offrein, B
Reference 24
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:51.352971Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 169f50e6-a2bd-41c3-a425-4cb19575fc04 · outbound
This paper cites F.; Menzel, S.; Stecconi, T.; La Porta, A.; Carraria-Martinotti, L.; Of- frein, B.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations F.; Menzel, S.; Stecconi, T.; La Porta, A.; Carraria-Martinotti, L.; Of- frein, B
Reference 25
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:51.110945Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 720d617c-a38a-4aa5-9f5f-0c13f0ab8e3f · outbound
This paper cites P.; Vine, D.; Kilcoyne, A.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations P.; Vine, D.; Kilcoyne, A
Reference 26
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:50.819148Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation a88af979-5657-4eee-b01f-fc21ccf07f8d · outbound
This paper cites E.; Strachan, J.
Reference 27
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:50.517900Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 7ac70fb4-cddb-4824-a019-78f81b78d93a · outbound
This paper cites Redox-Based Resistive Switching Memories-Nanoionic Mechanisms, Prospects, and Challenges.Advanced Materials (Deer- field Beach, Fla.) 2009, 21, 2632–2663.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Redox-Based Resistive Switching Memories-Nanoionic Mechanisms, Prospects, and Challenges.Advanced Materials (Deer- field Beach, Fla.) 2009, 21, 2632–2663
Reference 28
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:50.175110Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 8d914b35-daeb-48a6-ab3b-19758ba663d8 · outbound
This paper cites Understanding the role of the Ti metal electrode on the forming of HfO2-based RRAMs.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Understanding the role of the Ti metal electrode on the forming of HfO2-based RRAMs
Reference 29
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:49.947457Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation a37220f6-d407-4fef-98a2-172733396653 · outbound
This paper cites S.; Schroeder, H.; Breuer, U.; Waser, R.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations S.; Schroeder, H.; Breuer, U.; Waser, R
Reference 30
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:49.782508Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 5b3c8777-107b-4b82-8375-7f2100d19611 · outbound
This paper cites M.; Ramer, G.; Li, D.; Hoskins, B.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations M.; Ramer, G.; Li, D.; Hoskins, B
Reference 31
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:49.624687Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation f164e349-cc58-4126-a525-6b904b401d7c · outbound
This paper cites an unresolved cited work.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Unresolved cited work
Reference 32
- Resolution
- unresolved
- raw_fallback, observed 2026-08-07T12:27:49.392593Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 6da940e0-83b3-487c-9eff-7ca503fd5ef5 · outbound
This paper cites Thermochemical resistive switching: materials, mechanisms, and scaling projections.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Thermochemical resistive switching: materials, mechanisms, and scaling projections
Reference 33
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:49.078956Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 09c65256-8c95-4d6e-b300-cee385af0b41 · outbound
This paper cites Direct observation of conducting filaments on resistive switching of NiO thin films.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Direct observation of conducting filaments on resistive switching of NiO thin films
Reference 34
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:48.797231Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 637ded5b-30a5-4ed5-9436-ee62ff29856f · outbound
This paper cites M.; Sharma, A.
Reference 35
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:48.555403Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 58566ac8-33fa-476e-be96-d26b0cd050bb · outbound
This paper cites A comparative study on the diffusion behaviors of metal and oxygen ions in metal-oxide-based resistance switches via ab initio molecular dynam- ics simulations.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations A comparative study on the diffusion behaviors of metal and oxygen ions in metal-oxide-based resistance switches via ab initio molecular dynam- ics simulations
Reference 36
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:48.258168Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 44fe456b-f521-4b2f-9552-c5f7f1bae6f6 · outbound
This paper cites Modified charge transfer–embedded atom method potential for metal/metal oxide systems.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Modified charge transfer–embedded atom method potential for metal/metal oxide systems
Reference 37
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:47.984790Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 1b2c4f9b-e4d2-4e6c-8ef2-596868d7d560 · outbound
This paper cites W.; Wadley, H.
Reference 38
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:47.664717Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 22417312-cf69-4cc8-89f9-d1265aebc494 · outbound
This paper cites Voltage equilibration for reactive atomistic simulations of electrochemical processes.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Voltage equilibration for reactive atomistic simulations of electrochemical processes
Reference 39
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:47.392863Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 0f065e23-55b3-4284-a7e8-acc29c2f4c1c · outbound
This paper cites Fast parallel algorithms for short-range molecular dynamics.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Fast parallel algorithms for short-range molecular dynamics
Reference 40
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:47.115010Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation c43cb5ce-4d4b-4795-83ae-f74f69089a7a · outbound
This paper cites J.; Bragaglia, V.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations J.; Bragaglia, V
Reference 41
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:46.870568Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 9103c4c9-9c5d-48f9-9538-2231b02b75c0 · outbound
This paper cites V.; Pedersen, C.
Reference 42
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:46.595726Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 5bf1af6c-f236-4d88-9193-4578f24dfac4 · outbound
This paper cites M.; Hoffmann-Eifert, S.; Waser, R.; Menzel, S.; Wouters, D.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations M.; Hoffmann-Eifert, S.; Waser, R.; Menzel, S.; Wouters, D
Reference 43
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:46.362288Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation e9e63201-c25f-48eb-83a1-423d366fc6a6 · outbound
This paper cites A unified formulation of the constant temperature molecular dynamics methods.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations A unified formulation of the constant temperature molecular dynamics methods
Reference 44
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:46.105869Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 330e8236-0522-46f5-8323-86145c823bfd · outbound
This paper cites an unresolved cited work.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Unresolved cited work
Reference 45
- Resolution
- unresolved
- raw_fallback, observed 2026-08-07T12:27:45.985768Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 8298e524-e0fd-4fc5-ad69-ce4153837ae0 · outbound
This paper cites Developing a variable charge potential for Hf/Nb/Ta/Ti/Zr/O system via machine learning global optimization.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Developing a variable charge potential for Hf/Nb/Ta/Ti/Zr/O system via machine learning global optimization
Reference 46
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:45.839727Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 0d61f013-bc4c-4424-83f0-bc0c29064b63 · outbound
This paper cites J.; Aziz, A.; Rose, G.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations J.; Aziz, A.; Rose, G
Reference 47
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:45.703223Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 35730ba0-b725-462b-90c0-ee2e6d940f66 · outbound
This paper cites K.; Yildiz, B.; Waser, R.; others Nanoscale cation motion in TaO x, HfO x and TiO x memristive systems.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations K.; Yildiz, B.; Waser, R.; others Nanoscale cation motion in TaO x, HfO x and TiO x memristive systems
Reference 48
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:45.567205Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 19092f9e-375c-4dce-ad88-36b925525fb2 · outbound
This paper cites W.; Cottom, J.; Larcher, L.; Shluger, A.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations W.; Cottom, J.; Larcher, L.; Shluger, A
Reference 49
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:45.439836Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation e6afe75c-1edc-4423-af84-7af8293cb01e · outbound
This paper cites K.; Goddard III, W.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations K.; Goddard III, W
Reference 50
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:45.270067Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 82a1c27a-8974-443d-aed3-a337dff2a6d9 · outbound
This paper cites A modified embedded-atom method in- teratomic potential for ionic systems: 2 nnmeam+ qeq.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations A modified embedded-atom method in- teratomic potential for ionic systems: 2 nnmeam+ qeq
Reference 51
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:45.123944Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 145c79fa-9656-4841-becb-4033242ed2f9 · outbound
This paper cites Electrostatic potentials for metal-oxide surfaces and interfaces.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Electrostatic potentials for metal-oxide surfaces and interfaces
Reference 52
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:44.906085Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 07d2d62b-5080-4906-9d32-e40f216a7e96 · outbound
This paper cites G.; Gray, S.
Reference 53
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:44.638832Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 0cd12b9a-debf-4633-b005-f910d0c6a8ff · outbound
This paper cites an unresolved cited work.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Unresolved cited work
Reference 54
- Resolution
- unresolved
- raw_fallback, observed 2026-08-07T12:27:44.415909Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation dece4664-33dd-43e1-8521-952f2b42e7c4 · outbound
This paper cites J.; Ghosh, S.
Reference 55
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:44.153848Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Observation 891097ef-0bfa-4cb0-b522-eb539809dc41 · outbound
This paper cites Atomic origin of ultrafast resistance switching in nanoscale electrometallization cells.
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations Atomic origin of ultrafast resistance switching in nanoscale electrometallization cells
Reference 56
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-07T12:27:43.850913Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.
Pith citing papers
No inbound Pith citation observations are available.