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Integrity report for Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance

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arXiv:2506.08556 · pith:2025:CYQYI6IZG6FQOH5R2AVRKQZL7P

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Paper page arXiv integrity.json bundle.json

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Signed record

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