Typed states for the displayed outbound observations.
Source: paper_references, paper_reference_links, observed 2026-08-12T12:54:43.201599Z
Paper Citation Record · LEDGER
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C
As of 12 August 2026, this Paper Citation Record lists 29 of 29 outbound references and 1 inbound Pith citation observation for arXiv:2411.16652.
A citation records a reference. It does not transfer a finding from one paper to another.
Coverage vector
One-hop event checks from named stored sources.
Source: scholarly_work_events, retraction_status_cache, observed 2026-08-12T06:34:41.77262+00:00
Pith citing papers itemized under the disclosed page cap.
Source: paper_references, paper_reference_links, observed 2026-08-10T21:20:33.360388Z
A source-named dated measurement, never combined with another source.
Source: pith, observed 2026-08-11T00:16:15.729268Z
Reference resolution
29 of 29 outbound references displayed
- verified exact0
- verified fuzzy29
- unresolved0
- parse uncertain0
- malformed identifier0
- metadata mismatch0
External citation measurements
No source-named external measurement is stored.
Outbound references
Observation b4866742-ca49-45d4-a17c-442c0de36613 · outbound
This paper cites Review on non-volatile memory with high-k dielectrics: Flash for generation beyond 32 nm.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Review on non-volatile memory with high-k dielectrics: Flash for generation beyond 32 nm
Reference 1
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.557553Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation e3c471b4-408f-4e21-85cd-543160f6bc5d · outbound
This paper cites Resistive random access memory: a review of device challenges.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Resistive random access memory: a review of device challenges
Reference 2
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.545712Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation b839b479-0e02-4e6f-ac5f-fe67d4f09137 · outbound
This paper cites Non-volatile magnetic random access memories (MRAM).
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Non-volatile magnetic random access memories (MRAM)
Reference 3
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.533520Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation dd5c7ffc-c78b-4242-b8cb-2e111a62bae8 · outbound
This paper cites A Comprehensive Review on Phase Change Materials and Applications in Buildings and Components.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C A Comprehensive Review on Phase Change Materials and Applications in Buildings and Components
Reference 4
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.521949Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 749b59e5-1e75-4c28-8cac-4bf939e89e95 · outbound
This paper cites Wurtzite and fluorite ferroelectric materials for electronic memory.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Wurtzite and fluorite ferroelectric materials for electronic memory
Reference 5
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.510519Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 50a559e1-e09e-4681-b077-0d57efcd33ed · outbound
This paper cites TTSemiconductor (accessed 30 September 2023).
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C TTSemiconductor (accessed 30 September 2023)
Reference 6
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.499229Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 829abefc-4a73-443e-a16f-665af59406d8 · outbound
This paper cites Insights Into Curie‐Temperature and Phase Formation of Ferroelectric Hf1− xZrxO2 with Oxygen Defects from a Leveled Energy Landscape.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Insights Into Curie‐Temperature and Phase Formation of Ferroelectric Hf1− xZrxO2 with Oxygen Defects from a Leveled Energy Landscape
Reference 7
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.488456Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation fbcc842d-68e8-4d02-b6ab-ebf2195e0d64 · outbound
This paper cites Ferroelectric switching in sub-20 nm aluminum scandium nitride thin films.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Ferroelectric switching in sub-20 nm aluminum scandium nitride thin films
Reference 8
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.477091Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation d9aba7b4-4371-46a6-9f63-7d5a52fc81e6 · outbound
This paper cites Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios
Reference 9
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.466074Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 9927855a-e9e9-404a-bfc6-cda56d973a02 · outbound
This paper cites Sub‐microsecond polarization switching in (Al, Sc) N ferroelectric capacitors grown on complementary metal–oxide–semiconductor‐compatible aluminum electrodes.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Sub‐microsecond polarization switching in (Al, Sc) N ferroelectric capacitors grown on complementary metal–oxide–semiconductor‐compatible aluminum electrodes
Reference 10
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.454630Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 12e56a9c-a922-47bb-a5f2-e978ec7995d2 · outbound
This paper cites Thermal stability of the ferroelectric properties in 100 nm-thick Al0. 72Sc0. 28N.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Thermal stability of the ferroelectric properties in 100 nm-thick Al0. 72Sc0. 28N
Reference 12
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.432155Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 99e82247-7b7e-4afa-ae25-38d4ca897f5d · outbound
This paper cites Reconfigurable compute-in-memory on field-programmable ferroelectric diodes.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Reconfigurable compute-in-memory on field-programmable ferroelectric diodes
Reference 13
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.420962Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation d5005570-a83d-418c-a711-da3e2e1ec426 · outbound
This paper cites Scalable CMOS back-end-of-line-compatible AlScN/two- dimensional channel ferroelectric field-effect transistors.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Scalable CMOS back-end-of-line-compatible AlScN/two- dimensional channel ferroelectric field-effect transistors
Reference 14
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.409591Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 076ca0ca-224c-4d13-9bf4-1343b0ac9d4f · outbound
This paper cites On the exceptional temperature stability of ferroelectric Al1- xScxN thin films.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C On the exceptional temperature stability of ferroelectric Al1- xScxN thin films
Reference 15
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.397814Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 34f8587b-82d4-4820-87b4-4027b88ab8e7 · outbound
This paper cites Demonstration of 4H-SiC digital integrated circuits above 800° C.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Demonstration of 4H-SiC digital integrated circuits above 800° C
Reference 17
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.374997Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 070ef112-5b3a-46bf-9a0d-c64efad0e13c · outbound
This paper cites Application of commercial off-the-shelf technologies to aerospace gas turbine engine control.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Application of commercial off-the-shelf technologies to aerospace gas turbine engine control
Reference 18
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.363527Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 35344441-b953-428a-a837-d8a29ae8c4d5 · outbound
This paper cites Extreme environment technologies for space and terrestrial applications.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Extreme environment technologies for space and terrestrial applications
Reference 19
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.350731Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 503e8642-49e1-4d98-a547-fb564d7ae747 · outbound
This paper cites Review on materials, microsensors, systems and devices for high-temperature and harsh-environment applications.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Review on materials, microsensors, systems and devices for high-temperature and harsh-environment applications
Reference 20
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.339026Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 7aafe60e-7c9b-450d-86ea-d37af7e3039c · outbound
This paper cites Materials for high-temperature digital electronics.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Materials for high-temperature digital electronics
Reference 21
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.327429Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 4b4744a6-2ef4-4db9-972e-757fba2629db · outbound
This paper cites Extreme temperature 6H‐SiC JFET integrated circuit technology.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Extreme temperature 6H‐SiC JFET integrated circuit technology
Reference 22
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.316197Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 57ac2944-9c8f-453b-90c0-93a0db0edee7 · outbound
This paper cites Experimental durability testing of 4H SiC JFET integrated circuit technology at 727 °C.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Experimental durability testing of 4H SiC JFET integrated circuit technology at 727 °C
Reference 23
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.305276Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation fcf9cd62-f48b-4087-a599-d98fab4dcc57 · outbound
This paper cites An overview of SiC high-voltage power devices and high-temperature ICs.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C An overview of SiC high-voltage power devices and high-temperature ICs
Reference 24
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.293616Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 4d4cbee8-a379-456f-a1c5-a63cbc42a354 · outbound
This paper cites A 4H-SiC JFET with a monolithically integrated temperature sensor.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C A 4H-SiC JFET with a monolithically integrated temperature sensor
Reference 25
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.281047Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 392a6316-28f6-4efc-b17e-42bed3b6df9f · outbound
This paper cites Upscaling of 500° C Durable SiC JFET-R Integrated Circuits.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Upscaling of 500° C Durable SiC JFET-R Integrated Circuits
Reference 26
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.269134Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 552f7278-6e10-4611-9d10-5bb4b261efb3 · outbound
This paper cites Metal-ferroelectric AlScN-semiconductor memory devices on SiC wafers.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Metal-ferroelectric AlScN-semiconductor memory devices on SiC wafers
Reference 27
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.257118Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 99b5740b-7de1-4e05-84b1-588822fa4c05 · outbound
This paper cites A scalable ferroelectric non-volatile memory operating at 600° C.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C A scalable ferroelectric non-volatile memory operating at 600° C
Reference 28
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.386301Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 74d20944-2a1f-4e91-b0a0-4641a5cf23c3 · outbound
This paper cites Ferroelectric behavior of sputter deposited Al0. 72Sc0. 28N approaching 5 nm thickness.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Ferroelectric behavior of sputter deposited Al0. 72Sc0. 28N approaching 5 nm thickness
Reference 29
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.443187Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 934f02ec-3654-4578-b0ca-0646748557d3 · outbound
This paper cites Exceptional high temperature retention in Al0. 93B0. 07N films.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Exceptional high temperature retention in Al0. 93B0. 07N films
Reference 30
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.245045Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Observation 4af12fc3-a328-43a6-8c91-c5643a3e6393 · outbound
This paper cites Metal-ferroelectric AlScN-semiconductor memory devices on SiC wafers.
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C Metal-ferroelectric AlScN-semiconductor memory devices on SiC wafers
Reference 31
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T12:54:43.232777Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.
Pith citing papers
Observation 996e5661-f2e1-4b06-9019-bee471de307c · inbound
A Thermodynamic Theory of Proximity Ferroelectricity cites this paper.
A Thermodynamic Theory of Proximity Ferroelectricity Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C
Reference 24
- Resolution
- verified exact
- local_arxiv, observed 2026-08-10T21:20:33.757269Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.