pith. the verified trust layer for science. sign in

arxiv: 0901.0899 · v2 · pith:F24HI2BDnew · submitted 2009-01-07 · ❄️ cond-mat.str-el · cond-mat.other

Phase-transition driven memristive system

classification ❄️ cond-mat.str-el cond-mat.other
keywords memristiveapplicationsdemonstratedrivenphasepotentialrealizationtransition
0
0 comments X p. Extension
Add this Pith Number to your LaTeX paper What is a Pith Number?
\usepackage{pith}
\pithnumber{F24HI2BD}

Prints a linked pith:F24HI2BD badge after your title and writes the identifier into PDF metadata. Compiles on arXiv with no extra files. Learn more

read the original abstract

Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response in a thin film of Vanadium Dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss several potential applications of our device, including high density information storage. Most importantly, our results demonstrate the potential for a new realization of memristive systems based on phase transition phenomena.

This paper has not been read by Pith yet.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.