Typed states for the displayed outbound observations.
Source: paper_references, paper_reference_links
Paper Citation Record · LEDGER
Designing high endurance Hf0.5Zr0.5O2 capacitors through engineered recovery from fatigue for non-volatile ferroelectric memory and neuromorphic hardware
As of 10 August 2026, this Paper Citation Record lists 0 of 0 outbound references and 3 inbound Pith citation observations for arXiv:2409.00635.
A citation records a reference. It does not transfer a finding from one paper to another.
Coverage vector
One-hop event checks from named stored sources.
Source: scholarly_work_events, retraction_status_cache, observed 2026-08-10T06:31:04.303077+00:00
Pith citing papers itemized under the disclosed page cap.
Source: paper_references, paper_reference_links, observed 2026-07-04T00:48:46.936506Z
A source-named dated measurement, never combined with another source.
Source: arxiv_reference, observed 2026-07-04T00:49:17.300943Z
Reference resolution
0 of 0 outbound references displayed
- verified exact0
- verified fuzzy0
- unresolved0
- parse uncertain0
- malformed identifier0
- metadata mismatch0
External citation measurements
No source-named external measurement is stored.
Outbound references
No outbound reference observations are available for this paper version.
Pith citing papers
Observation b904eb0b-f584-4096-b0fe-8a78be8d5a75 · inbound
FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors cites this paper.
FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors Designing high endurance Hf0.5Zr0.5O2 capacitors through engineered recovery from fatigue for non-volatile ferroelectric memory and neuromorphic hardware
Reference 11
- Resolution
- verified exact
- arxiv_id, observed 2026-06-29T09:53:17.529361Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation 2f43f94f-0acd-4419-aca2-250b07617ba6 · inbound
FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors cites this paper.
FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors Designing high endurance Hf0.5Zr0.5O2 capacitors through engineered recovery from fatigue for non-volatile ferroelectric memory and neuromorphic hardware
Reference 11
- Resolution
- verified exact
- arxiv_id, observed 2026-06-30T11:34:38.190446Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.
Observation 65f27ff3-50ce-4ae2-8823-d8694960314a · inbound
FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors cites this paper.
FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors Designing high endurance Hf0.5Zr0.5O2 capacitors through engineered recovery from fatigue for non-volatile ferroelectric memory and neuromorphic hardware
Reference 11
- Resolution
- verified exact
- arxiv_id, observed 2026-07-04T00:49:17.304271Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.