Paper Citation Record · LEDGER

Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab

As of 13 August 2026, this Paper Citation Record lists 8 of 8 outbound references and 0 inbound Pith citation observations for arXiv:2411.16299.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2411.16299 v1

Coverage vector

measured 8 of 8 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-12T13:20:21.926512Z

measured 8 of 8 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-13T06:32:02.005865+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

8 of 8 outbound references displayed

verified exact0
verified fuzzy6
unresolved1
parse uncertain0
malformed identifier0
metadata mismatch1

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation f4483cf3-8e5e-400a-82a5-35ae8bff0640 · outbound

This paper cites an unresolved cited work.

Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab Unresolved cited work

Reference 1

Resolution: unresolved; raw_fallback, observed 2026-08-12T13:20:22.206962Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 5679f322-e539-4a55-858c-1a12c940b4fe · outbound

This paper cites Challenge of crystalline IGZO ceramics to silicon LSI - Its application to AI and displays.

Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab Challenge of crystalline IGZO ceramics to silicon LSI - Its application to AI and displays

Reference 2

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:20:22.183403Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 5265828e-aeb9-4366-96e2-ea7182e7c8f6 · outbound

This paper cites Experimental Demonstration of Ferroelectric HfO2 FET with Ultrathin- body IGZO for High-Density and Low-Power Memory Application,.

Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab Experimental Demonstration of Ferroelectric HfO2 FET with Ultrathin- body IGZO for High-Density and Low-Power Memory Application,

Reference 3

Resolution: metadata mismatch; raw_fallback, observed 2026-08-12T13:20:22.059613Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation e8e11d2d-a1fd-4576-bc10-fccf3a0e4ff9 · outbound

This paper cites IGZO integration scheme for enabling IGZO nFETs.

Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab IGZO integration scheme for enabling IGZO nFETs

Reference 4

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:20:22.163627Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation ecd3a82e-4990-43ed-bd9e-23ddaa73e27e · outbound

This paper cites High-Mobility and H2-Anneal Tolerant InGaSiO/InGaZnO/InGaSiO Double Hetero Channel Thin Film Transistor for Si-LSI Compatible Process.

Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab High-Mobility and H2-Anneal Tolerant InGaSiO/InGaZnO/InGaSiO Double Hetero Channel Thin Film Transistor for Si-LSI Compatible Process

Reference 5

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:20:22.144184Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 0d18a285-c972-46d8-819a-f7dfaa68e27c · outbound

This paper cites TCAD Simulation of Hydrogen Diffusion Induced Bias Temperature Instability in a‐IGZO Thin‐Film Transistors.

Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab TCAD Simulation of Hydrogen Diffusion Induced Bias Temperature Instability in a‐IGZO Thin‐Film Transistors

Reference 6

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:20:22.122454Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation d30d970b-b329-4216-b350-4e038f658fb4 · outbound

This paper cites Physics and technology of crystalline oxide semiconductor CAAC-IGZO.

Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab Physics and technology of crystalline oxide semiconductor CAAC-IGZO

Reference 7

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:20:22.099304Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 01abd64e-6957-4c46-b8fc-66ed61bce59c · outbound

This paper cites Pourtois, Phys.

Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab Pourtois, Phys

Reference 8

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T13:20:22.079651Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Pith citing papers

No inbound Pith citation observations are available.