Typed states for the displayed outbound observations.
Source: paper_references, paper_reference_links
Paper Citation Record · LEDGER
Assessing carrier mobility, dopability, and defect tolerance in the chalcogenide perovskite BaZrS$_3$
As of 14 August 2026, this Paper Citation Record lists 0 of 0 outbound references and 2 inbound Pith citation observations for arXiv:2405.09793.
A citation records a reference. It does not transfer a finding from one paper to another.
Coverage vector
One-hop event checks from named stored sources.
Source: scholarly_work_events, retraction_status_cache, observed 2026-08-13T06:32:02.005865+00:00
Pith citing papers itemized under the disclosed page cap.
Source: paper_references, paper_reference_links, observed 2026-08-12T15:25:01.481114Z
A source-named dated measurement, never combined with another source.
Source: pith, observed 2026-08-11T05:19:56.541919Z
Reference resolution
0 of 0 outbound references displayed
- verified exact0
- verified fuzzy0
- unresolved0
- parse uncertain0
- malformed identifier0
- metadata mismatch0
External citation measurements
No source-named external measurement is stored.
Outbound references
No outbound reference observations are available for this paper version.
Pith citing papers
Observation 9f881c09-229f-4ea3-aeb4-727ad868c3c9 · inbound
Octahedral tilt-driven phase transitions in BaZrS$_3$ chalcogenide perovskite cites this paper.
Octahedral tilt-driven phase transitions in BaZrS$_3$ chalcogenide perovskite Assessing carrier mobility, dopability, and defect tolerance in the chalcogenide perovskite BaZrS$_3$
Reference 9
- Resolution
- unresolved
- no resolver link, observed 2026-08-12T15:25:01.481114Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation e8b251a0-0e97-41f8-96f8-7f545b6679be · inbound
Ab initio theory of the non-resonant Raman effect in crystals at finite temperature in comparison to experiment: The examples of GaN and BaZrS3 cites this paper.
Ab initio theory of the non-resonant Raman effect in crystals at finite temperature in comparison to experiment: The examples of GaN and BaZrS3 Assessing carrier mobility, dopability, and defect tolerance in the chalcogenide perovskite BaZrS$_3$
Reference 44
- Resolution
- verified exact
- local_arxiv, observed 2026-08-11T05:19:56.549966Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.