Paper Citation Record · LEDGER

Josephson Field Effect Transistors with InAs on Insulator and High Permittivity Gate Dielectrics

As of 12 August 2026, this Paper Citation Record lists 3 of 3 outbound references and 0 inbound Pith citation observations for arXiv:2412.16221.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2412.16221 v2

Coverage vector

measured 3 of 3 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-11T12:51:03.175844Z

measured 3 of 3 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-12T06:34:41.77262+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

3 of 3 outbound references displayed

verified exact1
verified fuzzy0
unresolved2
parse uncertain0
malformed identifier0
metadata mismatch0

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation 2b5f742b-aa77-41c5-927b-efc8aa9c694a · outbound

This paper cites De; Braggio, A.; Paghi, A.; Sorba, L.; Giazotto, F.

Josephson Field Effect Transistors with InAs on Insulator and High Permittivity Gate Dielectrics De; Braggio, A.; Paghi, A.; Sorba, L.; Giazotto, F

Reference 1

Resolution: verified exact; doi, observed 2026-08-11T12:51:03.204935Z

Source-reported events for the cited work

correction dated 2025-02-04. Source: crossref record 10.1063/5.0255876->10.1063/5.0225361:correction, observed 2026-07-11T03:04:20.854527+00:00. This notice travels one citation hop only.

Observation 1be43704-e38d-4b5e-9a7b-f4cf981ddf8e · outbound

This paper cites Cryogenic Behavior of High-Permittivity Gate Dielectrics: The Impact of the Atomic Layer Deposition Temperature and the Lithographic Patterning Method.

Josephson Field Effect Transistors with InAs on Insulator and High Permittivity Gate Dielectrics Cryogenic Behavior of High-Permittivity Gate Dielectrics: The Impact of the Atomic Layer Deposition Temperature and the Lithographic Patterning Method

Reference 592

Resolution: unresolved; no resolver link, observed 2026-08-11T12:51:03.173131Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation ff3f3d9a-578e-47d9-9952-72e41a16d351 · outbound

This paper cites W.; Yacoby, A.

Josephson Field Effect Transistors with InAs on Insulator and High Permittivity Gate Dielectrics W.; Yacoby, A

Reference 2024

Resolution: unresolved; no resolver link, observed 2026-08-11T12:51:03.175844Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Pith citing papers

No inbound Pith citation observations are available.