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Ferroelectric Tunneling Junctions for Edge Computing

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arxiv 2107.01853 v1 pith:KWFYLXEJ submitted 2021-07-05 cs.ET physics.app-ph

Erika Covi , Quang T. Duong , Suzanne Lancaster , Viktor Havel , Jean Coignus , Justine Barbot , Ole Richter , Philip Klein
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Elisabetta Chicca Laurent Grenouillet Athanasios Dimoulas Thomas Mikolajick Stefan Slesazeck
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classification cs.ETphysics.app-ph
keywords ferroelectriccircuitscomputingedgejunctionstunnelingapplicationsconsidered
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Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.

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