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Radiation hardness of GaAs: Cr and Si sensors irradiated by electron beam

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arxiv 2006.01254 v1 pith:NARRGSNF submitted 2020-06-01 physics.ins-det hep-ex

U. Kruchonak , S. Abou El-Azm , K. Afanaciev , G. Chelkov , M. Demichev , M. Gostkin , A. Guskov , E. Firu
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V. Kobets A. Leyva d A. Nozdrin S. Porokhovoy A. Sheremetyeva P. Smolyanskiy A. Torres A. Tyazhev O. Tolbanov N. Zamyatin A. Zarubin A. Zhemchugov
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classification physics.ins-dethep-ex
keywords gaassensorshighirradiatedradiationwerehardnessmeasured
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The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical materials. High radiation hardness at room temperature stands out and needs to be systematically investigated. In this paper an experimental study of the effect of 20.9 MeV electrons generated by the LINAC-200 accelerator on some properties of GaAs:Cr based sensors is presented. In parallel, Si sensors were irradiated at the same conditions, measured and analyzed in order to perform a comparative study. The target sensors were irradiated with the dose up to 1.5 MGy. The current-voltage characteristics, resistivity, charge collection efficiency and their dependences on the bias voltage and temperature were measured at different absorbed doses. An analysis of the possible microscopic mechanisms leading to the observed effects in GaAs:Cr sensors is presented in the article.

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  1. Novel Silicon and GaAs Sensors for Compact Sampling Calorimeters

    physics.ins-det 2025-01 conditional novelty 6.0 of 10

    A test-beam study shows silicon and GaAs pad sensors with edge readout meet signal-to-noise requirements for a compact calorimeter, with GaAs showing a notable signal drop between pads.

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