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arxiv: 1907.09017 · v2 · pith:NWYE2RZR · submitted 2019-07-21 · cond-mat.str-el

Pressure-Driven Valence Increase and Metallization in Kondo Insulator Ce₃Bi₄Pt₃

Daniel J. Campbell , Zachary E. Brubaker , Connor Roncaioli , Prathum Saraf , Yuming Xiao , Paul Chow , Curtis Kenney-Benson , Dmitry Popov
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Rena J. Zieve Jason R. Jeffries Johnpierre Paglione
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classification cond-mat.str-el
keywords pressureinsulatorkondoresultsstatevalencex-rayabsorption
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We report the results of high pressure x-ray diffraction, x-ray absorption, and electrical transport measurements of Kondo insulator Ce$_3$Bi$_4$Pt$_3$ up to 42 GPa, the highest pressure reached in the study of any Ce-based KI. We observe a smooth decrease in volume and movement toward intermediate Ce valence with pressure, both of which point to increased electron correlations. Despite this, temperature-dependent resistance data show the suppression of the interaction-driven ambient pressure insulating ground state. We also discuss potential ramifications of these results for the predicted topological KI state.

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