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A new Low Gain Avalanche Diode concept: the double-LGAD

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arxiv 2307.14320 v1 pith:ONGUEJGY submitted 2023-07-26 physics.ins-det

F. Carnesecchi , S. Strazzi , A. Alici , R.Arcidiacono , N. Cartiglia , D. Cavazza , S. Durando , M.Ferrero
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A. Margotti L. Menzio R. Nania B.Sabiu G. Scioli F. Siviero V. Sola G. Vignola
This is my paper · ORCID
classification physics.ins-det
keywords singletextmubeenconceptdouble-lgadelectronicslgadadding
verification ladder T0 review T1 audit T2 compute T3 formal
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This paper describes the new concept of the double-LGAD. The goal is to increase the charge at the input of the electronics, keeping a time resolution equal or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end electronics. The study here reported has been done starting from single LGAD with a thickness of 25 \textmu{m}, 35 \textmu{m} and 50 \textmu{m}.

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