Integrity report for AlN Gate Interlayer for UWBG AlGaN Transistors with Breakdown Field >6.9 MV/cm and PFOM >1.8 GW/cm2

A machine-verified record of the checks Pith has run against this paper: detector runs, findings, signed bundle events, and canonical identifiers.

arXiv:2606.02954 · pith:2026:OSHQNN2A6IFBDTZDAOPEGBQVU4

0Critical

0Advisory

3Detectors run

2026-06-05Last checked

Paper page arXiv integrity.json bundle.json

Detector runs

claim_evidence completed v1.0.0 · findings 0 · 2026-06-05 06:49:17.697826+00:00

cited_work_retraction completed v1.0.0 · findings 0 · 2026-06-03 18:57:07.715923+00:00

ai_meta_artifact skipped v1.0.0 · findings 0 · 2026-06-03 03:35:24.456811+00:00

Findings

No public integrity findings for this paper.

Signed record

The machine-readable record for this paper lives at /pith/OSHQNN2A6IFBDTZDAOPEGBQVU4/integrity.json. Pith Number bundles also include signed pith.integrity.v1 events where a Pith Number exists.