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Integrity report for High Permittivity Dielectric Field-Plated Vertical (001) β-Ga₂O₃ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of > 1 GW/cm²

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arXiv:2105.04413 · pith:2021:PEW3DODVYHI6TDDQAKR4MV5AUX

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Paper page arXiv integrity.json bundle.json

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Signed record

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