Paper Citation Record · LEDGER

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3

As of 19 August 2026, this Paper Citation Record lists 28 of 28 outbound references and 0 inbound Pith citation observations for arXiv:1908.01101.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
1908.01101 v1

Coverage vector

measured 28 of 28 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-14T15:28:13.486820Z

measured 28 of 28 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-19T06:32:44.657259+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

28 of 28 outbound references displayed

verified exact0
verified fuzzy27
unresolved1
parse uncertain0
malformed identifier0
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External citation measurements

No source-named external measurement is stored.

Outbound references

Observation ee54b88d-f05c-4b46-b014-e4b8e90867ae · outbound

This paper cites and Wang, H., Applied Physics Letters, 112(3), p.032101.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Wang, H., Applied Physics Letters, 112(3), p.032101

Reference 1

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:14.051180Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation c38775c3-4e68-4832-85f2-930bd6b1d58e · outbound

This paper cites and Romanov, A.E., Rev.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Romanov, A.E., Rev

Reference 2

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:14.035736Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation 88e65b84-ce5a-4c12-b59d-98fd97360a29 · outbound

This paper cites and Yamakoshi, S., physica status solidi (a) , 211(1), pp.21-26.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Yamakoshi, S., physica status solidi (a) , 211(1), pp.21-26

Reference 3

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:14.021196Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation 33e3c702-444f-4400-9d0c-5326660d30f0 · outbound

This paper cites and Chua, C.L., Advanced Electronic Materials, 4(1), p.1600501.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Chua, C.L., Advanced Electronic Materials, 4(1), p.1600501

Reference 4

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:14.005730Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation d91c0911-5a77-4a2a-8b8d-17f41306971b · outbound

This paper cites and Hao, Y., IEEE Electron Device Letters, 39(10), pp.1564-1567.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Hao, Y., IEEE Electron Device Letters, 39(10), pp.1564-1567

Reference 5

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.878533Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation ddfc9fe0-1f29-40eb-8dcf-c6a35d9d376d · outbound

This paper cites and Xing, H.G., 2018.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Xing, H.G., 2018

Reference 6

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.862479Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation 6d5f7871-6a7c-4085-a64c-ebb76cb5f273 · outbound

This paper cites and Leedy, K., IEEE Electron Device Letters, 38(6), pp.790-793.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Leedy, K., IEEE Electron Device Letters, 38(6), pp.790-793

Reference 7

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.847837Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation 6f10ec7d-3c9f-4f1a-8c39-36535defd6a5 · outbound

This paper cites and Rajan, S., IEEE Electron Device Letters, 39(4), pp.568-571.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Rajan, S., IEEE Electron Device Letters, 39(4), pp.568-571

Reference 8

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.832573Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation d2c3bd71-88bd-415b-848a-496a3d4ae080 · outbound

This paper cites and Yamakoshi, S., Applied Physics Letters, 103(12), p.123511.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Yamakoshi, S., Applied Physics Letters, 103(12), p.123511

Reference 9

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.817653Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation 3d4f6e1e-ece5-4fe2-a1f6-dcbf421f2592 · outbound

This paper cites and Isai, M., Journal of the American Ceramic Society , 90(9), pp.2879-.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Isai, M., Journal of the American Ceramic Society , 90(9), pp.2879-

Reference 10

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.802244Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation 9a8c83c7-da58-4005-873a-b64b15d53c2a · outbound

This paper cites and Mastro, M.A., Applied Physics Reviews, 5(1), p.011301.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Mastro, M.A., Applied Physics Reviews, 5(1), p.011301

Reference 11

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.787317Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation 9b564194-afce-4054-8b4e-a03ea17518c4 · outbound

This paper cites and Speck, J.S., Applied Physics Express , 7(9), p.095501.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Speck, J.S., Applied Physics Express , 7(9), p.095501

Reference 12

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.772429Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation 53958f2a-927f-4fa2-b8e1-859654e72d36 · outbound

This paper cites and Speck, J.S., Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 28(2), pp.354-359.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Speck, J.S., Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 28(2), pp.354-359

Reference 13

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.756344Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation 64f8f431-c6ee-474b-b9aa-76218e7ff241 · outbound

This paper cites and Yamakoshi, S., Applied Physics Express, 8(1), p.015503.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Yamakoshi, S., Applied Physics Express, 8(1), p.015503

Reference 15

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.741185Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation 0a832513-c117-43e5-8faf-0a21f4219f9b · outbound

This paper cites and Zhao, H., Applied Physics Letters , 112(5), p.052104.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Zhao, H., Applied Physics Letters , 112(5), p.052104

Reference 16

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.726155Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation 4b9b5760-d674-4d99-95ef-7fe520dcb7ef · outbound

This paper cites and Speck, J.S., Semiconductor Science and Technology , 33(4), p.045001.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Speck, J.S., Semiconductor Science and Technology , 33(4), p.045001

Reference 17

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.709754Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation e0a6e85c-7377-4395-9cfe-60cb15d47748 · outbound

This paper cites and Chabak, K.D., Applied Physics Letters, 113(6), p.062101.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Chabak, K.D., Applied Physics Letters, 113(6), p.062101

Reference 18

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.693992Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation e9727943-8b32-485e-899d-346ed0d6b3b1 · outbound

This paper cites and Jena, D., Applied Physics Letters, 101(3), p.032109.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Jena, D., Applied Physics Letters, 101(3), p.032109

Reference 19

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.677946Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation 0a8e95a6-c6c2-4f7b-9caf-19b0485143ec · outbound

This paper cites and Merlin, R., Journal of applied physics , 72(7), pp.3129-3135.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Merlin, R., Journal of applied physics , 72(7), pp.3129-3135

Reference 20

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.663067Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation 5ae56738-91d9-4c62-9191-ce189620dd2e · outbound

This paper cites and Fitch, R.C., IEEE Electron Device Letters, 39(1), pp.67-70.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Fitch, R.C., IEEE Electron Device Letters, 39(1), pp.67-70

Reference 21

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.647611Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation 44407ca3-7fb4-41b0-8529-a29f4fa1eb1a · outbound

This paper cites and Jessen, G., Applied Physics Letters, 112(17), p.173502.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Jessen, G., Applied Physics Letters, 112(17), p.173502

Reference 22

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.632140Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation 8865f892-2601-4dda-a8c0-71fc4a1bf47e · outbound

This paper cites and Rajan, S., Applied Physics Letters , 112(23), p.233503.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Rajan, S., Applied Physics Letters , 112(23), p.233503

Reference 23

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.617129Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation 06a91019-9af5-4d9e-9d8f-63fc45b37921 · outbound

This paper cites Journal of Chemical Education 28.8: 428.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 Journal of Chemical Education 28.8: 428

Reference 24

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.601585Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation 253ad3c3-1558-4fd9-9bef-7b15931832fe · outbound

This paper cites Molecular Beam Epitaxy.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 Molecular Beam Epitaxy

Reference 25

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.584872Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation daef3114-f330-4b54-846e-9553c16dbcaa · outbound

This paper cites Journal of physical and chemical reference data 15.3: 967-983.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 Journal of physical and chemical reference data 15.3: 967-983

Reference 26

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.570072Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation 5f6963a2-a248-49ec-a8f1-2a47d1bac5ab · outbound

This paper cites and Gustafsson, T., Surface Review and Letters, 6(01), pp.45-52.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Gustafsson, T., Surface Review and Letters, 6(01), pp.45-52

Reference 28

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.553410Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation 096c4298-fd9a-410b-9ff1-10aa2d072f55 · outbound

This paper cites an unresolved cited work.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 Unresolved cited work

Reference 29

Resolution: unresolved; raw_fallback, observed 2026-08-14T15:28:13.538235Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Observation e1602a96-5f28-4397-9ebc-ad9a39e22f01 · outbound

This paper cites and Engel, T., 1987.

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3 and Engel, T., 1987

Reference 30

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T15:28:13.523251Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-19T06:32:44.657259+00:00.

Pith citing papers

No inbound Pith citation observations are available.