Typed states for the displayed outbound observations.
Source: paper_references, paper_reference_links, observed 2026-08-15T16:19:18.358267Z
Paper Citation Record · LEDGER
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity
As of 22 August 2026, this Paper Citation Record lists 52 of 52 outbound references and 1 inbound Pith citation observation for arXiv:2509.07045.
A citation records a reference. It does not transfer a finding from one paper to another.
Coverage vector
One-hop event checks from named stored sources.
Source: scholarly_work_events, retraction_status_cache, observed 2026-08-22T06:32:14.747728+00:00
Pith citing papers itemized under the disclosed page cap.
Source: paper_references, paper_reference_links, observed 2026-05-09T18:45:07.928250Z
A source-named dated measurement, never combined with another source.
Source: arxiv_reference, observed 2026-05-11T16:06:16.432289Z
Reference resolution
52 of 52 outbound references displayed
- verified exact0
- verified fuzzy51
- unresolved1
- parse uncertain0
- malformed identifier0
- metadata mismatch0
External citation measurements
No source-named external measurement is stored.
Outbound references
Observation 2591cc88-b2db-4788-b2fa-1474a2bd1c58 · outbound
This paper cites Nonvolatile Memory Materials for Neuromorphic Intelligent Machines,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Nonvolatile Memory Materials for Neuromorphic Intelligent Machines,
Reference 1
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:19.090388Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 1a29d49b-ee88-4fe5-9283-721bb5086132 · outbound
This paper cites Pathways to efficient neuromorphic computing with non-volatile memory technologies,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Pathways to efficient neuromorphic computing with non-volatile memory technologies,
Reference 2
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:19.075587Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 3495ca8f-5e44-4811-a1b8-49efea091cd9 · outbound
This paper cites Flexible Neuromorphic Electronics for Computing, Soft Robotics, and Neuroprosthetics,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Flexible Neuromorphic Electronics for Computing, Soft Robotics, and Neuroprosthetics,
Reference 3
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:19.060742Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation c32608e5-7e5d-4d98-8f0a-7fa4ef438393 · outbound
This paper cites Compact artificial neuron based on anti-ferroelectric transistor,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Compact artificial neuron based on anti-ferroelectric transistor,
Reference 4
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:19.048020Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation e6e3eb6a-bd34-4e4c-877b-fb55e6470738 · outbound
This paper cites Back -End CMOS Compatible and Flexible Ferroelectric Memories for Neuromorphic Computing and Adaptive Sensing,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Back -End CMOS Compatible and Flexible Ferroelectric Memories for Neuromorphic Computing and Adaptive Sensing,
Reference 5
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:19.034388Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 4bd07d71-afc0-43a9-8124-3b520b588869 · outbound
This paper cites Harnessing ferroic ordering in thin film devices for analog memory and neuromorphic computing applications down to deep cryogenic temperatures,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Harnessing ferroic ordering in thin film devices for analog memory and neuromorphic computing applications down to deep cryogenic temperatures,
Reference 6
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:19.020009Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 4d9eeaec-1491-4fa0-ac0e-04ef75e58025 · outbound
This paper cites Physical Mechanisms behind the Field- Cycling Behavior of HfO2 -Based Ferroelectric Capacitors,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Physical Mechanisms behind the Field- Cycling Behavior of HfO2 -Based Ferroelectric Capacitors,
Reference 7
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:19.007040Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 109bec4f-f66f-4b3f-bd05-0fb4ada35d8d · outbound
This paper cites Ferroelectric FET analog synapse for acceleration of deep neural network training.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Ferroelectric FET analog synapse for acceleration of deep neural network training
Reference 8
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.993671Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 05fcb991-df45-4c53-b3f7-339d6621b284 · outbound
This paper cites Toprasertpong, K.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Toprasertpong, K
Reference 9
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.979701Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 0788a704-cba6-41b0-b1ab-0f2672e208d2 · outbound
This paper cites Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-Based 1T1C FeRAM.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-Based 1T1C FeRAM
Reference 10
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.966125Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation a50a4eb1-cf1d-46f1-b685-c2f7a662bf99 · outbound
This paper cites an unresolved cited work.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Unresolved cited work
Reference 11
- Resolution
- unresolved
- raw_fallback, observed 2026-08-15T16:19:18.952640Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 2943c132-1141-4406-abdc-7b8badb01ea4 · outbound
This paper cites Ferroelectricity in Simple Binary ZrO2 and HfO2,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Ferroelectricity in Simple Binary ZrO2 and HfO2,
Reference 12
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.937673Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 75555b94-a576-4b24-a541-877488cc919c · outbound
This paper cites Cryogenic Endurance of Anti-ferroelectric and Ferroelectric Hf1−xZrxO2 for Quantum Computing Applications.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Cryogenic Endurance of Anti-ferroelectric and Ferroelectric Hf1−xZrxO2 for Quantum Computing Applications
Reference 13
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.922987Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 17b79e1e-4761-4f5b-be52-628e83b2d1db · outbound
This paper cites Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature,
Reference 14
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.910305Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 768d2371-42b4-4e98-8401-ad141bdfdc9c · outbound
This paper cites Effect of Process Temperature on Density and Electrical Characteristics of Hf0.5Zr0.5O2 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Effect of Process Temperature on Density and Electrical Characteristics of Hf0.5Zr0.5O2 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition,
Reference 15
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.890073Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 7d3d69ad-d252-476e-98b4-d999246990a3 · outbound
This paper cites Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering,
Reference 16
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.876400Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 17d5a65d-6592-4cca-8822-e2d0846bbd46 · outbound
This paper cites A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High-Temperature Annealing,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High-Temperature Annealing,
Reference 17
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.862951Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 767a76d9-6b83-484f-b876-86fd689d1bd6 · outbound
This paper cites Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy,
Reference 18
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.849460Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 2735a2a1-2daf-4180-b3ad-80c01f635490 · outbound
This paper cites Ferroelectric [HfO2 /ZrO2 ] Superlattices with Enhanced Polarization, Tailored Coercive Field, and Improved High Temperature Reliability,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Ferroelectric [HfO2 /ZrO2 ] Superlattices with Enhanced Polarization, Tailored Coercive Field, and Improved High Temperature Reliability,
Reference 19
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.834881Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 0e921fa2-7749-4661-b0ea-baa9e92f6550 · outbound
This paper cites Low Voltage High Polarization by Optimizing Scavenged WNx Interfacial Capping Layer at the Ru/HfxZr1-xO2 Interface and Evidence of Fatigue Mechanism,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Low Voltage High Polarization by Optimizing Scavenged WNx Interfacial Capping Layer at the Ru/HfxZr1-xO2 Interface and Evidence of Fatigue Mechanism,
Reference 20
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.820448Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation ef87754d-a320-46e5-9d3b-1518c9b05d32 · outbound
This paper cites Ferroelectric Hf0.5Zr0.5O2 for Analog Memory and In-Memory Computing Applications Down to Deep Cryogenic Temperatures,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Ferroelectric Hf0.5Zr0.5O2 for Analog Memory and In-Memory Computing Applications Down to Deep Cryogenic Temperatures,
Reference 21
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.799017Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation dbc1e706-8291-46a8-895e-f6d86096a699 · outbound
This paper cites Understanding fatigue and recovery mechanisms in Hf0.5Zr0.5O2 capacitors for designing high endurance ferroelectric memory and neuromorphic hardware,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Understanding fatigue and recovery mechanisms in Hf0.5Zr0.5O2 capacitors for designing high endurance ferroelectric memory and neuromorphic hardware,
Reference 22
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.783804Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation d3a386f4-6546-4ce2-9dce-247c0194785b · outbound
This paper cites ZrO2-HfO2 superlattice ferroelectric capacitors with optimized annealing to achieve extremely high polarization stability.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity ZrO2-HfO2 superlattice ferroelectric capacitors with optimized annealing to achieve extremely high polarization stability
Reference 23
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.768491Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation ed2570a7-540f-447e-a46e-636899f2f0a3 · outbound
This paper cites Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVM.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVM
Reference 24
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.753092Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation c0d29807-2871-4a21-9db3-099376a23ec3 · outbound
This paper cites Enhancing ferroelectric stability: wide-range of adaptive control in epitaxial HfO2/ZrO2 superlattices,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Enhancing ferroelectric stability: wide-range of adaptive control in epitaxial HfO2/ZrO2 superlattices,
Reference 25
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.735864Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 34ebcad8-ab5c-4fec-b073-aedc85722ce5 · outbound
This paper cites Wake-up effects in Si-doped hafnium oxide ferroelectric thin films,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Wake-up effects in Si-doped hafnium oxide ferroelectric thin films,
Reference 26
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.720897Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 212759d4-7127-4438-840c-d28a3d3be01b · outbound
This paper cites Back -End-of-Line Compatible Low- Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Back -End-of-Line Compatible Low- Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation,
Reference 27
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.705208Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 22d211e5-e961-478b-9dd1-a76767bc2d2b · outbound
This paper cites HfO2-ZrO2 Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity HfO2-ZrO2 Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed,
Reference 28
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.690020Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation ec68f8e8-4e33-486c-a380-4ebfb9034089 · outbound
This paper cites Back-End-of-Line Compatible HfO2/ZrO2 Superlattice Ferroelectric Capacitor With TiO2 Seed Layer for Enhanced Ferroelectricity.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Back-End-of-Line Compatible HfO2/ZrO2 Superlattice Ferroelectric Capacitor With TiO2 Seed Layer for Enhanced Ferroelectricity
Reference 29
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.673765Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 3cfbc9f2-1575-48a2-8dfd-e50a3d55b737 · outbound
This paper cites Antiferroelectricity in thin-film ZrO2 from first principles,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Antiferroelectricity in thin-film ZrO2 from first principles,
Reference 30
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.662128Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 1d9d4b99-eb62-439c-b2e5-f9427cf8be84 · outbound
This paper cites Structural Changes Underlying Field - Cycling Phenomena in Ferroelectric HfO2 Thin Films,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Structural Changes Underlying Field - Cycling Phenomena in Ferroelectric HfO2 Thin Films,
Reference 31
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.649915Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 2b588ba7-1bc4-47ac-86c2-40a791e0455f · outbound
This paper cites Improved ferroelectric properties of CMOS back-end- of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Improved ferroelectric properties of CMOS back-end- of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers,
Reference 32
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.636040Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 703d6cef-6607-4412-8d7e-6c8d71d48aa1 · outbound
This paper cites Large remnant polarization and great reliability characteristics in W/HZO/W ferroelectric capacitors,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Large remnant polarization and great reliability characteristics in W/HZO/W ferroelectric capacitors,
Reference 33
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.622881Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 6c9ecd5f-5812-48dc-9992-4c9697da8cf2 · outbound
This paper cites Investigating charge trapping in ferroelectric thin films through transient measurements,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Investigating charge trapping in ferroelectric thin films through transient measurements,
Reference 34
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.611296Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 686150da-90b6-4548-8c19-ed64db922562 · outbound
This paper cites Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget,
Reference 35
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.599899Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 0bf3563e-21c6-4eae-9499-0d8adbab27a9 · outbound
This paper cites Review on the Microstructure of Ferroelectric Hafnium Oxides,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Review on the Microstructure of Ferroelectric Hafnium Oxides,
Reference 36
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.587989Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 939eec3b-8a76-46c1-a736-0d51ef89d601 · outbound
This paper cites Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film,
Reference 37
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.575271Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 729eeef1-5172-4217-9886-19573f81d820 · outbound
This paper cites Ferroelectric Hf1-xZrxO 2 memories: device reliability and depolarization fields.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Ferroelectric Hf1-xZrxO 2 memories: device reliability and depolarization fields
Reference 38
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.561379Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 045e3e8a-46a6-4efc-bf2e-8f9e4349d888 · outbound
This paper cites Interface-induced phenomena in polarization response of ferroelectric thin films,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Interface-induced phenomena in polarization response of ferroelectric thin films,
Reference 39
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.549063Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 77bdbf98-31fc-44cd-a8cb-57d01ecdc35c · outbound
This paper cites Strategies for Reducing Operating Voltage of Ferroelectric Hafnia by Decreasing Coercive Field and Film Thickness,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Strategies for Reducing Operating Voltage of Ferroelectric Hafnia by Decreasing Coercive Field and Film Thickness,
Reference 40
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.537634Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 37060e22-37a8-4a88-8316-64cccb4be44b · outbound
This paper cites Reduced coercive field and enhanced ferroelectric polarization of Hf0. 5Zr0. 5O2 film through electric-field-assisted rapid annealing.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Reduced coercive field and enhanced ferroelectric polarization of Hf0. 5Zr0. 5O2 film through electric-field-assisted rapid annealing
Reference 41
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.526838Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 12589d28-0044-47bc-afdd-34bd5ac301f0 · outbound
This paper cites Engineering Hf 0.5 Zr 0.5 O 2 ferroelectric tunnel junctions with amorphous WO x bottom electrodes achieving high remanent polarization and record low- operating voltage.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Engineering Hf 0.5 Zr 0.5 O 2 ferroelectric tunnel junctions with amorphous WO x bottom electrodes achieving high remanent polarization and record low- operating voltage
Reference 42
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.516415Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 41a549fd-dd01-4a98-b7c2-328ddf3d31c7 · outbound
This paper cites Effect of Thermal Engineering on the Reliability of Analog States in Ferroelectric Hf0.5Zr0.5O2 Memory.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Effect of Thermal Engineering on the Reliability of Analog States in Ferroelectric Hf0.5Zr0.5O2 Memory
Reference 43
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.504516Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 61fa5141-e451-47b2-9e06-8d87da1dd7b7 · outbound
This paper cites Electric -Field-Induced Ferroelectricity in 5%Y-doped Hf0.5Zr0.5O2 : Transformation from the Paraelectric Tetragonal Phase to the Ferroelectric Orthorhombic Phase,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Electric -Field-Induced Ferroelectricity in 5%Y-doped Hf0.5Zr0.5O2 : Transformation from the Paraelectric Tetragonal Phase to the Ferroelectric Orthorhombic Phase,
Reference 44
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.492978Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation dfd613ca-f62e-4f32-ae10-f28acdd20d11 · outbound
This paper cites Comprehensive Study on the Kinetic Formation of the Orthorhombic Ferroelectric Phase in Epitaxial Y-Doped Ferroelectric HfO2 Thin Films,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Comprehensive Study on the Kinetic Formation of the Orthorhombic Ferroelectric Phase in Epitaxial Y-Doped Ferroelectric HfO2 Thin Films,
Reference 45
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.480861Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation d9846f22-be6a-42d8-bd8c-e922f532ffb3 · outbound
This paper cites Observation and characterization of recoverable fatigue process under low-electric field (< 1.8 MV/cm) in HfZrO ferroelectric film.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Observation and characterization of recoverable fatigue process under low-electric field (< 1.8 MV/cm) in HfZrO ferroelectric film
Reference 46
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.467100Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation c7763611-a44c-428d-b2f6-6f5bab32f336 · outbound
This paper cites Enhanced performance of hafnia self-rectifying ferroelectric tunnel junctions at cryogenic temperatures,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Enhanced performance of hafnia self-rectifying ferroelectric tunnel junctions at cryogenic temperatures,
Reference 47
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.454057Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation a82dd196-1b25-41f0-a052-ca7542889140 · outbound
This paper cites Temperature-dependent defect behaviors in ferroelectric Hf0.5Zr0.5O2 thin film: Re-wakeup phenomenon and underlying mechanisms.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Temperature-dependent defect behaviors in ferroelectric Hf0.5Zr0.5O2 thin film: Re-wakeup phenomenon and underlying mechanisms
Reference 48
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.439605Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation ca613c4a-90f9-4b44-8d6e-c60a2e53189e · outbound
This paper cites Involvement of Unsaturated Switching in the Endurance Cycling of Si-doped HfO2 Ferroelectric Thin Films,.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Involvement of Unsaturated Switching in the Endurance Cycling of Si-doped HfO2 Ferroelectric Thin Films,
Reference 49
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.427001Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 7d6958ab-b50e-4f08-a419-7018252078e1 · outbound
This paper cites Resistive switching in all‐ oxide ferroelectric tunnel junctions with ionic interfaces.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Resistive switching in all‐ oxide ferroelectric tunnel junctions with ionic interfaces
Reference 50
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.414853Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation ca3fb706-5bee-429e-b694-c730b717c0d9 · outbound
This paper cites Mimicking Neurotransmitter Release and Long‐ Term Plasticity by Oxygen Vacancy Migration in a Tunnel Junction Memristor.
Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity Mimicking Neurotransmitter Release and Long‐ Term Plasticity by Oxygen Vacancy Migration in a Tunnel Junction Memristor
Reference 51
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.402936Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Observation 3c77e2b2-17f4-447f-938d-7f9e0cf2fa71 · outbound
This paper cites Majumdar, H.
Reference 52
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-15T16:19:18.390116Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.
Pith citing papers
Observation 37ab2a4d-4f00-4262-9ae7-44e58398b9c3 · inbound
An Unsupervised Machine Learning-based Framework for Wafer Scale Variability Analysis and Performance Prediction of Ferroelectric Hf0.5Zr0.5O2 Thin Film Capacitors cites this paper.
An Unsupervised Machine Learning-based Framework for Wafer Scale Variability Analysis and Performance Prediction of Ferroelectric Hf0.5Zr0.5O2 Thin Film Capacitors Record High Polarization at 2V and Imprint-free operation in Superlattice HfO2-ZrO2 by Proper Tuning of Ferro and Antiferroelectricity
Reference 26
- Resolution
- verified exact
- arxiv_id, observed 2026-05-11T16:06:16.479874Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-22T06:32:14.747728+00:00.