Pith. sign in

REVIEW 4 major objections 6 minor 63 references

High temperature surface state in Kondo insulator U$_3$Bi$_4$Ni$_3$

T0 review · 4 major / 6 minor · reviewed 2026-08-09 · deepseek-v4-flash

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗ Review JSON

Pith's one-line read A Kondo insulator shows a metallic surface state that dominates transport below 150 K.

desk verdict A plausible high-temperature surface transport signature in a new Kondo insulator, but the quantitative decomposition and 'inherently protected' claim are model-dependent and underdetermined. read the letter →

arxiv 2502.03448 v2 pith:UBXWYIK6 submitted 2025-02-05 cond-mat.str-el

Christopher Broyles , Xiaohan Wan , Wenting Cheng , Dingsong Wu , Hengxin Tan , Qiaozhi Xu , Shannon L. Gould , Hasan Siddiquee
show 11 more authors
Leyan Xiao Ryan Chen Wanyue Lin Yuchen Wu Prakash Regmi Yun Suk Eo Jieyi Liu Yulin Chen Binghai Yan Kai Sun Sheng Ran
This is my paper · ORCID
classification cond-mat.str-el
keywords KondoinsulatorsurfacestateU3Bi4Ni3uraniumintermetallicCorbino-disktransportfiniteelementanalysisstronglycorrelatedelectronstopological
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper reports that the Kondo insulator U3Bi4Ni3 conducts electricity through a metallic surface state at temperatures far above any previously studied Kondo insulator. The authors show that a surface conduction channel emerges below 250 K and takes over transport below 150 K, whereas in SmB6 and YbB12 the surface dominates only below a few kelvin. At low temperature the surface conductivity is roughly an order of magnitude higher than the bulk. If the claim holds, U3Bi4Ni3 becomes the first Kondo insulator in which robust surface conduction is accessible at practical temperatures, opening a new material platform for studying topological surface states in strongly correlated systems and for devices based on them.

What carries the argument

The argument rests on the inverted-resistance measurement in a Corbino-disk geometry, in which electrode 2 acts as a two-dimensional Faraday cage and two four-terminal resistances, R12;12 and R12;34, are measured. In the surface-dominated regime R12;12 is proportional to the surface resistivity, while R12;34 follows R12;34 = C t (rho_s)^2 / rho_b, an inverse-gap scaling that makes bulk and surface contributions distinguishable. Finite-element simulations of the exact electrode geometry use the bulk resistivity rho_b and surface conductivity sigma_s as fitting parameters to reproduce both measured resistances at each temperature, yielding separate temperature dependences for the two channels. Thickness-dependent resistivity provides an independent qualitative check: above 200 K the resistivity is thickness independent, indicating bulk transport, whereas at low temperature it falls as the sample is thinned, indicating surface transport.

What would settle it

A temperature-dependent ARPES or STM study between 100 and 250 K: if no metallic surface band appears above the Kondo temperature while the transport plateau persists, the surface-state onset claim fails; alternatively, a thickness series extending to micron-scale samples that deviates from the 1/t scaling predicted by the two-channel model would indicate a finite-depth conducting layer.

Watch

Extended reading notes

Core claim

The central discovery is that U3Bi4Ni3, a uranium-based Kondo insulator with reported spin and charge gaps near 19 meV and 72-95 meV, possesses a robust two-dimensional metallic surface state. Transport on successively polished crystals shows the resistivity becoming thickness-dependent below about 200 K, and Corbino-disk inverted-resistance measurements combined with finite-element analysis separate bulk and surface channels: the surface conductivity rises from about 250 K and becomes nearly temperature independent below 150 K, while the bulk remains activated. At base temperature the surface conductivity exceeds the bulk by roughly an order of magnitude, depending on sample. Because the surface state appears above the Kondo temperature TK approximately 100 K and survives air exposure, polishing, and sample-to-sample variation, the authors conclude it is inherently protected; they argue the most plausible origin is topological band inversion, with Kondo hybridization renormalizing the gap downward without closing it, so the topology is preserved throughout.

Load-bearing premise

The bulk-vs-surface decomposition assumes the surface is an infinitely thin two-dimensional conductor in parallel with a uniform three-dimensional bulk, and the finite-element fit uses that two-channel model to extract sigma_s and rho_b from two measured resistances; if the conductive layer has finite thickness, or is an impurity band or damage layer, the extracted values, the 250 K onset, and the protection conclusion would all need revision.

Editorial extensions

If this is right

  • U3Bi4Ni3 becomes a third Kondo insulator platform, alongside SmB6 and YbB12, in which surface-state and quantum-oscillation questions can be studied at much higher temperatures.
  • Surface-dominated conduction below 150 K means bulk and surface transport can be separated over a wide temperature window without dilution-refrigerator temperatures.
  • The measured sheet conductivity at 5 K, 0.1-0.5 1/ohm, is an order of magnitude larger than in SmB6 and FeSi and comparable to Bi2Se3, suggesting high mobility in a strongly correlated two-dimensional system.
  • Because the gap renormalizes without closing through the Kondo temperature, a topological surface state would retain its topological character across the Kondo crossover.
  • The robust, air-stable surface conduction is a candidate building block for heterostructures aimed at quantum Hall states or proximity-induced Majorana physics.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • The onset of the surface state above TK suggests the metallic surface band may exist before Kondo coherence develops; temperature-dependent ARPES or STM between 100 and 250 K, which the paper does not report, would directly test this.
  • If the high-conductivity channel is a finite-thickness subsurface layer rather than an infinitely thin two-dimensional sheet, the extracted sigma_s and the 'inherently protected' interpretation would need revision; polishing samples to micrometer scale or using local probes would distinguish the pictures.
  • The very high sheet conductivity in a strongly correlated insulator raises the possibility of unconventional quantum oscillations in U3Bi4Ni3 at temperatures far more accessible than in SmB6.
  • The paper's DFT+U results fail to capture the Kondo physics, so a dynamical mean-field calculation is the natural next step; a computed topological invariant would turn the 'inherently protected' claim into a concrete, checkable prediction.
Share X Bluesky LinkedIn Reddit HN

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

4 major / 6 minor

Summary. This manuscript reports transport, magnetization, Hall effect, ARPES, and DFT+U results on the Kondo insulator U3Bi4Ni3. The authors infer a near-surface high-conductivity channel from thickness-dependent longitudinal resistivity and from Corbino-disk inverted-resistance measurements, and they use finite element analysis (FEA) to decompose the measured resistances into a bulk resistivity ρb(T) and a surface conductivity σs(T). They claim that a surface state emerges below 250 K and dominates transport below 150 K, with surface conductivity about one order of magnitude higher than bulk at low temperature, and they argue that the robustness of this channel indicates inherent (topological) protection. Bulk characterization, including Curie-Weiss susceptibility, activation gaps of 95 meV and 1.5 meV, anomalous Hall behavior, and resonant ARPES, is presented to establish the Kondo insulating ground state.

Significance. If the central claim were established, U3Bi4Ni3 would be qualitatively distinct from SmB6 and YbB12, with surface-dominated transport at temperatures far above the few-Kelvin scale of those materials; the large sheet conductivity and unusually high operating temperature would make the system attractive for devices and for studying surface-bulk competition in correlated insulators. The thickness-dependent resistivity and the inverted Corbino resistance behavior provide credible qualitative evidence for a near-surface conducting channel, and the paper usefully documents sample-to-sample variability. However, the quantitative surface/bulk decomposition is exactly determined rather than overdetermined, and the microscopic origin and protection claims are not supported by the data presented; these are load-bearing issues that need revision.

major comments (4)
  1. [Methods, Finite Element Analysis; Fig. 3] The FEA decomposition uses two measured four-terminal resistances, R12;12 and R12;34, and exactly two fitting parameters, ρb and σs, at each temperature, under the assumption of an infinitely thin 2D surface shell in parallel with the 3D bulk. The decomposition is therefore exactly determined, and the extracted σs(T) and its onset near 250 K are properties imposed by the assumed geometry rather than independently measured. If the high-conductivity path were instead a finite-thickness subsurface layer, a band-bending accumulation layer, or a damage layer, the same raw resistances would yield different σs(T) and a different onset. I request a sensitivity analysis that includes a finite-thickness surface/sub-surface layer, or an additional measurement geometry that overdetermines σs(T), before the quantitative surface-state claim is accepted.
  2. [Abstract; Fig. 3i] The abstract's statement that the surface state 'dominates transport properties below 150 K' is not representative of sample S2, for which the FEA ratio σb*t/σs reaches unity only near 50 K (Fig. 3i). This is not a cosmetic issue: the crossover temperature is a headline quantitative result and varies by more than a factor of three between the two samples. The claims should be stated per sample, or a well-defined aggregation with error estimates should be provided.
  3. [Section III, Discussions; SI Section III; Fig. 2] The paper overinterprets robustness as inherent topological protection. Surface-dominated transport across polished, air-exposed surfaces and two Corbino samples is also consistent with non-topological mechanisms such as surface accumulation, polishing damage, or an impurity band. The manuscript itself states that DFT+U does not capture the Kondo gap (SI Section III), and the ARPES data in Fig. 2 show only bulk EDCs with no surface-state dispersion. The abstract's 'inherently protected' therefore overstates the evidence; this wording should be removed or explicitly qualified unless direct evidence, such as surface-state ARPES dispersion, quasiparticle interference, or a symmetry/topology calculation, is added.
  4. [Section II; Fig. 3f and 3i] The claim that surface conductivity is 'about one order of magnitude higher' than bulk is sample-dependent: at base temperature the FEA gives σs roughly 5 times the bulk value for S1 (Fig. 3f) and roughly 10 times for S2 (Fig. 3i). The text acknowledges this variation, but the abstract and later discussion present a single order-of-magnitude statement. The quantitative claim should be qualified per sample or accompanied by an uncertainty estimate that reflects the spread.
minor comments (6)
  1. [Fig. 2 caption vs. Methods, ARPES] The main text and Fig. 2 caption state the ARPES measurement temperature as T = 20 K, while the Methods section states the sample temperature was 6 K; please reconcile these values.
  2. [Fig. 1d inset] The inset equation appears as 'ρ(400 K)/ρ = (2σs/σ400 K) t−1 + σb/σ400 K' and is missing a subscript on the denominator of the left-hand side; please define all symbols and verify the dimensional consistency of the displayed formula.
  3. [Section II, Corbino-disk measurements] The text says the R12;12 configuration 'has similar behavior to ρxx(T)', but R12;12 is a resistance while ρxx is a resistivity; please specify whether the comparison is made to the resistance of a standard bar or to the resistivity, and explain how the different geometries are normalized.
  4. [Section II] The phrase 'insulator-metal crossover' in connection with R12;34 is ambiguous because the bulk remains insulating throughout the measured range; please specify that 'metal' refers to the surface-dominated transport channel.
  5. [Methods, Finite Element Analysis] The FEA fitting procedure is described as first fitting the ratio R12;12/R12;34 and then using R12;12 (or R12;34) individually; please clarify whether both experimental resistances are fit simultaneously, and describe how uncertainties in the measured resistances propagate into the extracted ρb(T) and σs(T).
  6. [SI, Magneto-transport fittings] SI Figure 2 shows a carrier-type crossover near 150-200 K that is said to align with the surface-state onset; since the Hall measurement is primarily a bulk probe, please clarify whether this crossover is expected to be affected by surface conduction and why the two-band bulk fit remains valid in the surface-dominated regime.

Circularity Check

0 steps flagged · score 0.0 of 10

No significant circularity: the surface-state claim is supported by independent thickness-dependent transport, and the FEA extraction is a transparent two-parameter decomposition rather than a renamed prediction.

full rationale

The central surface-state claim is not equivalent to its inputs by construction. The thickness-dependence experiment provides raw, model-independent evidence: above 200 K the resistivity is essentially independent of thickness, while at low temperatures the resistivity decreases as the crystal is thinned from 290 to 120 um (Fig. 1d), which cannot arise from a purely bulk conductor. The Corbino inverted-resistance data independently show R12;34 developing the inverse-gap relation R12;34 = C t rho_s^2 / rho_b (Section II), the signature of a high-conductivity channel parallel to the bulk. The FEA in Methods is a fit: the authors state they use rho_b and sigma_s as fitting parameters and 'extract the fitted values' at each temperature, so the numerical sigma_s(T), the 250 K onset, and the 'one order of magnitude' statement are model-dependent outputs rather than parameter-free predictions. But that is a transparency/model-identification issue, not circularity: the paper does not rename a fitted parameter as a predicted quantity, and it does not use the fit to 'predict' the same resistances it was fit to. The inverted-resistance method (Ref. 54) is a published, externally validated technique previously applied to SmB6 and FeSi (Refs. 15 and 55); although Kai Sun is a coauthor of Ref. 54, this is independent evidence under the stated rules rather than an unverified self-citation. The DFT+U section explicitly admits the calculation predicts a metallic state and 'contradict[s] the experimental results,' so no first-principles result is being presented as the source of the surface state. The 'inherently protected' remark is explicitly a qualitative inference from robustness across samples, not a derived uniqueness theorem. Therefore no circular step can be exhibited, and the appropriate finding is no significant circularity.

Assumptions & free parameters 3 free parameters · 4 assumptions · 0 invented entities

The central claim leans on a standard two-channel transport model and on the Kondo-insulator identity borrowed from prior work; the only parameters fit to the reported data are the bulk and surface conductivities (and supporting activation gaps). No new entities are invented.

free parameters (3)
  • Bulk resistivity ρb(T) from FEA = not tabulated
    In Methods, ρb and σs are fitting parameters used to reproduce measured R12;12 and R12;34; the extracted ρb(T) shows an activation gap of about 3.2-4.2 meV below the Kondo temperature.
  • Surface conductivity σs(T) from FEA = not tabulated
    The central quantitative claim that the surface channel dominates relies on this fitted quantity; at base temperature σs is roughly 5-10 times the bulk conductance, but no error bars are given.
  • Activation gaps from Arrhenius fits = 95 meV, 1.5 meV, Δ1low=17.7-39.3 meV, Δ2low=2.4-3.1 meV
    Used to characterize the Kondo gap and the surface-state transport; supporting, not load-bearing, but fit to the same data used for the central claim.
assumptions (4)
  • domain assumption Independent bulk and surface conduction channels
    FEA simulation and inverted-resistance analysis assume charge transport decomposes into a 3D bulk path and a 2D surface path; see Methods and Section II.
  • domain assumption Inverted-resistance scaling R12;34 = C t ρs^2/ρb from Eo et al.
    Borrowed from Ref. 54; used to interpret the Corbino-disk data in the surface-dominated regime. The constant C and geometry are not independently verified for U3Bi4Ni3.
  • domain assumption U3Bi4Ni3 is a Kondo insulator below about 100 K
    Established by Refs. 41 and 42 and supported here by susceptibility, Hall, and ARPES; the surface-state interpretation presupposes this ground state.
  • ad hoc to paper Robustness across samples implies inherent (topological) protection
    Section III: 'The robustness of the surface state indicates that it is inherently protected.' No microscopic derivation or direct probe of topology is provided; robustness could also arise from doping or a passive surface layer.

how reviews work

0 comments
Cite this review

Pith. "Pith review of High temperature surface state in Kondo insulator U$_3$Bi$_4$Ni$_3$." pith.science (2026). https://pith.science/paper/UBXWYIK6

@misc{pith2026250203448,
  author       = {Pith},
  title        = {Pith review of: High temperature surface state in Kondo insulator U$_3$Bi$_4$Ni$_3$},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/UBXWYIK6}},
  note         = {Machine review of arXiv:2502.03448}
}
abstract

The resurgence of interest in Kondo insulators has been driven by two major mysteries: the presence of metallic surface states and the observation of quantum oscillations. To further explore these mysteries, it is crucial to investigate another similar system beyond the two existing ones, SmB$_6$ and YbB$_{12}$. Here, we address this by reporting on a Kondo insulator, U$_3$Bi$_4$Ni$_3$. Our transport measurements reveal that a surface state emerges below 250 K and dominates transport properties below 150 K, which is well above the temperature scale of SmB$_6$ and YbB$_{12}$. At low temperatures, the surface conductivity is about one order of magnitude higher than the bulk. The robustness of the surface state indicates that it is inherently protected. The similarities and differences between U$_3$Bi$_4$Ni$_3$ and the other two Kondo insulators will provide valuable insights into the nature of metallic surface states in Kondo insulators and their interplay with strong electron correlations.

Discussion (0). Continue with ORCID to comment.

Reference graph

Works this paper leans on

63 extracted references · 63 canonical work pages

  1. [1]

    Tsunetsugu, M

    H. Tsunetsugu, M. Sigrist, and K. Ueda, The ground-state phase diagram of the one-dimensional kondo283 lattice model, Rev. Mod. Phys. 69, 809 (1997).284

    work page 1997

  2. [2]

    Jullien, J

    R. Jullien, J. N. Fields, and S. Doniach, Zero-temperature real-space renormalization-group method for a285 kondo-lattice model hamiltonian, Phys. Rev. B 16, 4889 (1977).286

    work page 1977

  3. [3]

    Lacroix and M

    C. Lacroix and M. Cyrot, Phase diagram of the kondo lattice, Phys. Rev. B 20, 1969 (1979).287

    work page 1979

  4. [4]

    N. Read, D. M. Newns, and S. Doniach, Stability of the kondo lattice in the large-n limit, Phys. Rev. B 30,288 3841 (1984).289

    work page 1984

  5. [5]

    H. Kaga, H. Kubo, and T . Fujiwara, Coherent kondo-lattice state and the crossover transitions in the290 anderson-lattice model, Phys. Rev. B 37, 341 (1988).291 10

    work page 1988

  6. [6]

    Kumar and N

    P . Kumar and N. S. Vidhyadhiraja, From mixed valence to the kondo lattice regime, Journal of Physics:292 Condensed Matter 23, 485601 (2011).293

    work page 2011

  7. [7]

    Fu and C

    L. Fu and C. L. Kane, Topological insulators with inversion symmetry , Phys. Rev. B76, 045302 (2007).294

    work page 2007

  8. [8]

    Alexandrov, M

    V . Alexandrov, M. Dzero, and P . Coleman, Cubic topological kondo insulators, Physical review letters111,295 226403 (2013).296

    work page 2013

Show all 63 references
  1. [9]

    Takimoto, SmB6: A promising candidate for a topological insulator, Journal of the Physical Society of297 Japan 80, 123710 (2011).298

    T . Takimoto, SmB6: A promising candidate for a topological insulator, Journal of the Physical Society of297 Japan 80, 123710 (2011).298

    2011

  2. [10]

    F . Lu, J. Zhao, H. Weng, Z. Fang, and X. Dai, Correlated topological insulators with mixed valence, Phys.299 Rev. Lett. 110, 096401 (2013).300

    2013

  3. [11]

    J. Kim, K. Kim, C.-J. Kang, S. Kim, H. C. Choi, J.-S. Kang, J. D. Denlinger, and B. I. Min, Termination-301 dependent surface in-gap states in a potential mixed-valent topological insulator: SmB6, Phys. Rev. B 90,302 075131 (2014).303

    2014

  4. [12]

    Thunström and K

    P . Thunström and K. Held, Topology ofSmB6 determined by dynamical mean field theory, Phys. Rev. B304 104, 075131 (2021).305

    2021

  5. [13]

    Fu, Topological crystalline insulators, Phys

    L. Fu, Topological crystalline insulators, Phys. Rev. Lett.106, 106802 (2011).306

    2011

  6. [14]

    H. Weng, J. Zhao, Z. Wang, Z. Fang, and X. Dai, Topological crystalline Kondo insulator in mixed valence307 ytterbium borides, Phys. Rev. Lett. 112, 016403 (2014).308

    2014

  7. [15]

    Y. S. Eo, A. Rakoski, J. Lucien, D. Mihaliov, Ç. Kurdak, P . F . Rosa, and Z. Fisk, Transport gap in SmB6309 protected against disorder, Proceedings of the National Academy of Sciences 116, 12638 (2019).310

    2019

  8. [16]

    Tan, Y .-T

    B. Tan, Y .-T . Hsu, B. Zeng, M. C. Hatnean, N. Harrison, Z. Zhu, M. Hartstein, M. Kiourlappou, A. Srivastava,311 M. Johannes, et al., Unconventional fermi surface in an insulating state, Science 349, 287 (2015).312

    2015

  9. [17]

    Hartstein, W

    M. Hartstein, W . Toews, Y.-T . Hsu, B. Zeng, X. Chen, M. C. Hatnean, Q. Zhang, S. Nakamura, A. Padgett,313 G. Rodway-Gant, et al., Fermi surface in the absence of a fermi liquid in the Kondo insulator SmB6, Nature314 Physics 14, 166 (2018).315

    2018

  10. [18]

    Xiang, Y

    Z. Xiang, Y. Kasahara, T . Asaba, B. Lawson, C. Tinsman, L. Chen, K. Sugimoto, S. Kawaguchi, Y. Sato,316 G. Li, et al., Quantum oscillations of electrical resistivity in an insulator, Science 362, 65 (2018).317

    2018

  11. [19]

    Y. Sato, Z. Xiang, Y. Kasahara, T . Taniguchi, S. Kasahara, L. Chen, T . Asaba, C. Tinsman, H. Murayama,318 O. Tanaka, et al., Unconventional thermal metallic state of charge-neutral fermions in an insulator, Nature319 Physics 15, 954 (2019).320

    2019

  12. [20]

    Chowdhury , I

    D. Chowdhury , I. Sodemann, and T . Senthil, Mixed-valence insulators with neutral fermi surfaces, Nature321 11 communications 9, 1766 (2018).322

    2018

  13. [21]

    Baskaran, Majorana fermi sea in insulating SmB6: A proposal and a theory of quantum oscillations in323 Kondo insulators, arXiv 1507, 03477 (2015).324

    G. Baskaran, Majorana fermi sea in insulating SmB6: A proposal and a theory of quantum oscillations in323 Kondo insulators, arXiv 1507, 03477 (2015).324

    2015

  14. [22]

    Erten, P .-Y

    O. Erten, P .-Y. Chang, P . Coleman, and A. M. Tsvelik, Skyrme insulators: Insulators at the brink of325 superconductivity , Phys. Rev. Lett.119, 057603 (2017).326

    2017

  15. [23]

    Coleman, E

    P . Coleman, E. Miranda, and A. Tsvelik, Are Kondo insulators gapless?, Physica B: Condensed Matter327 186-188, 362 (1993).328

    1993

  16. [24]

    Coleman, E

    P . Coleman, E. Miranda, and A. Tsvelik, Odd-frequency pairing in the Kondo lattice, Phys. Rev. B49, 8955329 (1994).330

    1994

  17. [25]

    Coleman, L

    P . Coleman, L. B. Ioffe, and A. M. Tsvelik, Simple formulation of the two-channel Kondo model, Phys. Rev.331 B 52, 6611 (1995).332

    1995

  18. [26]

    Senthil, S

    T . Senthil, S. Sachdev, and M. Vojta, Fractionalized fermi liquids, Phys. Rev. Lett.90, 216403 (2003).333

    2003

  19. [27]

    Yoshida, R

    T . Yoshida, R. Peters, and N. Kawakami, Non-hermitian perspective of the band structure in heavy-fermion334 systems, Phys. Rev. B 98, 035141 (2018).335

    2018

  20. [28]

    Nagai, Y

    Y. Nagai, Y. Qi, H. Isobe, V . Kozii, and L. Fu, DMFT reveals the non-hermitian topology and fermi arcs in336 heavy-fermion systems, Phys. Rev. Lett. 125, 227204 (2020).337

    2020

  21. [29]

    W . A. Phelan, S. M. Koohpayeh, P . Cottingham, J. W . Freeland, J. C. Leiner, C. L. Broholm, and T . M.338 McQueen, Correlation between bulk thermodynamic measurements and the low-temperature-resistance339 plateau in SmB6, Phys. Rev. X 4, 031012 (2014).340

    2014

  22. [30]

    Y. Sato, Z. Xiang, Y. Kasahara, S. Kasahara, L. Chen, C. Tinsman, F . Iga, J. Singleton, N. L. Nair, N. Mak-341 simovic, et al., Topological surface conduction in Kondo insulator YbB12, Journal of Physics D: Applied342 Physics 54, 404002 (2021).343

    2021

  23. [31]

    Gorshunov, N

    B. Gorshunov, N. Sluchanko, A. Volkov, M. Dressel, G. Knebel, A. Loidl, and S. Kunii, Low-energy electro-344 dynamics of SmB6, Phys. Rev. B 59, 1808 (1999).345

    1999

  24. [32]

    Yamaguchi, A

    J. Yamaguchi, A. Sekiyama, M. Kimura, H. Sugiyama, Y. Tomida, G. Funabashi, S. Komori, T . Balashov,346 W . Wulfhekel, T . Ito,et al., Different evolution of the intrinsic gap in strongly correlated SmB6 in contrast347 to YbB12, New Journal of Physics 15, 043042 (2013).348

    2013

  25. [33]

    Zhang, N

    X. Zhang, N. P . Butch, P . Syers, S. Ziemak, R. L. Greene, and J. Paglione, Hybridization, inter-ion correlation,349 and surface states in the Kondo insulator SmB6, Phys. Rev. X 3, 011011 (2013).350

    2013

  26. [34]

    W . Ruan, C. Ye, M. Guo, F . Chen, X. Chen, G.-M. Zhang, and Y . Wang, Emergence of a coherent in-gap state351 12 in the SmB6 Kondo insulator revealed by scanning tunneling spectroscopy , Phys. Rev. Lett.112, 136401352 (2014).353

    2014

  27. [35]

    Takeda, M

    Y. Takeda, M. Arita, M. Higashiguchi, K. Shimada, H. Namatame, M. Taniguchi, F . Iga, and T . Takabatake,354 High-resolution photoemission study of the temperature-dependent c− f hybridization gap in the Kondo355 semiconductor YbB12, Phys. Rev. B 73, 033202 (2006).356

    2006

  28. [36]

    M.-H. Wu, H. Rossignol, and M. Gradhand, Spin-dependent transport in uranium, Physical Review B 101,357 224411 (2020).358

    2020

  29. [37]

    X. Yuan, P . S. Riseborough, E. Calegari, and S. Magalhaes, Enhanced spin–orbit coupling in the under-359 screened anderson lattice model for itinerant 5f metals, Electronic Structure 3, 024009 (2021).360

    2021

  30. [38]

    Smith and E

    J. Smith and E. Kmetko, Magnetism or bonding: A nearly periodic table of transition elements, Journal of361 the Less Common Metals 90, 83 (1983).362

    1983

  31. [39]

    Endstra, G

    T . Endstra, G. J. Nieuwenhuys, and J. A. Mydosh, Hybridization model for the magnetic-ordering behavior363 of uranium- and cerium-based 1:2:2 intermetallic compounds, Phys. Rev. B 48, 9595 (1993).364

    1993

  32. [40]

    Q. G. Sheng, B. R. Cooper, and S. P . Lim, First-principle study of hybridization effects and magnetic365 ordering in correlated-electron uranium systems, Phys. Rev. B 50, 9215 (1994).366

    1994

  33. [41]

    Klimczuk, H.-o

    T . Klimczuk, H.-o. Lee, F . Ronning, T . Durakiewicz, N. Kurita, H. Volz, E. D. Bauer, T . McQueen,367 R. Movshovich, R. J. Cava, and J. D. Thompson, Physical properties of the uranium ternary compounds368 U3Bi4M3 (M = Ni, Rh), Phys. Rev. B 77, 245111 (2008).369

    2008

  34. [42]

    S.-H. Baek, N. J. Curro, T . Klimczuk, H. Sakai, E. D. Bauer, F . Ronning, and J. D. Thompson, Hybridization-370 driven gap in U3Bi4Ni3: A 209Bi NMR/NQR study , Phys. Rev. B79, 195120 (2009).371

    2009

  35. [43]

    Nagaosa, J

    N. Nagaosa, J. Sinova, S. Onoda, A. H. MacDonald, and N. P . Ong, Anomalous Hall effect, Rev. Mod. Phys.372 82, 1539 (2010).373

    2010

  36. [44]

    N. W . Ashcroft and N. D. Mermin,Solid state physics (Cengage Learning, 2022).374

    2022

  37. [45]

    P . M. Levy , Extraordinary Hall effect in Kondo-type systems: Contributions from anomalous velocity , Phys.375 Rev. B 38, 6779 (1988).376

    1988

  38. [46]

    A. Fert, A. Friederich, and A. Hamzic, Hall effect in dilute magnetic alloys, Journal of Magnetism and377 Magnetic Materials 24, 231 (1981).378

    1981

  39. [47]

    Kondo, Effect of ordinary scattering on exchange scattering from magnetic impurity in metals, Phys.379 Rev

    J. Kondo, Effect of ordinary scattering on exchange scattering from magnetic impurity in metals, Phys.379 Rev. 169, 437 (1968).380

    1968

  40. [48]

    Nagaoka, T

    K. Nagaoka, T . Jamneala, M. Grobis, and M. F . Crommie, Temperature dependence of a single Kondo381 13 impurity , Phys. Rev. Lett.88, 077205 (2002).382

    2002

  41. [49]

    Q. Y. Chen, X. B. Luo, D. H. Xie, M. L. Li, X. Y. Ji, R. Zhou, Y. B. Huang, W . Zhang, W . Feng, Y. Zhang,383 L. Huang, Q. Q. Hao, Q. Liu, X. G. Zhu, Y. Liu, P . Zhang, X. C. Lai, Q. Si, and S. Y. Tan, Orbital-selective384 Kondo entanglement and antiferromagnetic order in USb2...

    2019

  42. [50]

    Siddiquee, C

    H. Siddiquee, C. Broyles, E. Kotta, S. Liu, S. Peng, T . Kong, B. Kang, Q. Zhu, Y. Lee, L. Ke, H. Weng, J. D.386 Denlinger, L. A. Wray , and S. Ran, Breakdown of the scaling relation of anomalous Hall effect in Kondo387 lattice ferromagnet USbTe, Nature Communications 14, 527 ...

    2023

  43. [51]

    Neupane, N

    M. Neupane, N. Alidoust, S. Xu, T . Kondo, Y. Ishida, D.-J. Kim, C. Liu, I. Belopolski, Y. Jo, T .-R. Chang,389 et al., Surface electronic structure of the topological Kondo-insulator candidate correlated electron system390 SmB6, Nature communications 4, 2991 (2013).391

    2013

  44. [52]

    Jiang, S

    J. Jiang, S. Li, T . Zhang, Z. Sun, F . Chen, Z. Ye, M. Xu, Q. Ge, S. Tan, X. Niu,et al., Observation of possible392 topological in-gap surface states in the kondo insulator SmB6 by photoemission, Nature communications393 4, 3010 (2013).394

    2013

  45. [53]

    Hagiwara, Y

    K. Hagiwara, Y. Ohtsubo, M. Matsunami, S.-i. Ideta, K. Tanaka, H. Miyazaki, J. E. Rault, P . L. Fèvre,395 F . Bertran, A. Taleb-Ibrahimi, R. Yukawa, M. Kobayashi, K. Horiba, H. Kumigashira, K. Sumida, T . Okuda,396 F . Iga, and S.-i. Kimura, Surface Kondo effect and non-trivia...

    2016

  46. [54]

    Y . S. Eo, K. Sun, i. m. c. Kurdak, D.-J. Kim, and Z. Fisk, Inverted resistance measurements as a method for399 characterizing the bulk and surface conductivities of three-dimensional topological insulators, Phys. Rev.400 Appl. 9, 044006 (2018).401

    2018

  47. [55]

    Y. S. Eo, K. Avers, J. A. Horn, H. Yoon, S. R. Saha, A. Suarez, M. S. Fuhrer, and J. Paglione, Extraordinary402 bulk-insulating behavior in the strongly correlated materials FeSi and FeSb2, Applied Physics Letters 122,403 233102 (2023).404

    2023

  48. [56]

    D.-J. Kim, J. Xia, and Z. Fisk, Topological surface state in the Kondo insulator samarium hexaboride,405 Nature materials 13, 466 (2014).406

    2014

  49. [57]

    J. Yong, Y. Jiang, D. Usanmaz, S. Curtarolo, X. Zhang, L. Li, X. Pan, J. Shin, I. Takeuchi, and R. L. Greene,407 Robust topological surface state in Kondo insulator SmB6 thin films, Applied Physics Letters 105, 222403408 (2014).409

    2014

  50. [58]

    Susaki, A

    T . Susaki, A. Sekiyama, K. Kobayashi, T . Mizokawa, A. Fujimori, M. Tsunekawa, T . Muro, T . Matsushita,410 S. Suga, H. Ishii, T . Hanyu, A. Kimura, H. Namatame, M. Taniguchi, T . Miyahara, F . Iga, M. Kasaya,411 14 and H. Harima, Low-energy electronic structure of the Kondo ...

    1996

  51. [59]

    Y . S. Kim, M. Brahlek, N. Bansal, E. Edrey , G. A. Kapilevich, K. Iida, M. Tanimura, Y . Horibe, S.-W . Cheong,414 and S. Oh, Thickness-dependent bulk properties and weak antilocalization effect in topological insulator415 Bi2Se3, Phys. Rev. B 84, 073109 (2011).416

    2011

  52. [60]

    Kresse and J

    G. Kresse and J. Furthmüller, Efficient iterative schemes for ab initio total-energy calculations using a417 plane-wave basis set, Phys. Rev. B 54, 11169 (1996).418

    1996

  53. [61]

    J. P . Perdew, K. Burke, and M. Ernzerhof, Generalized gradient approximation made simple, Phys. Rev.419 Lett. 77, 3865 (1996).420

    1996

  54. [62]

    hump-like

    G. Pizzi, V . Vitale, R. Arita, S. Blügel, F . Freimuth, G. Géranton, M. Gibertini, D. Gresch, C. Johnson,421 T . Koretsune,et al., Wannier90 as a community code: new features and applications, Journal of Physics:422 Condensed Matter 32, 165902 (2020).423 15 /s8722 /s56/s8722 ...

    2020

  55. [63]

    N. W . Ashcroft and N. D. Mermin,Solid state physics (Cengage Learning, 2022).68 /s8722 /s56/s8722 /s54/s8722 /s52/s8722 /s500 2 4 6 8 /s8722/s50/s48/s8722 /s49/s480 1 02 0ρx y(μΩ- cm)H (T) 300 K two band + C( a)( c)/s8722 /s56/s8722 /s54/s8722 /s52/s8722 /s500 2 4 6 8 0 .050 ...

    2022

Pith tools

Reviewed August 9, 2026 · model on record in the stance chip above.