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Paper Citation Record · LEDGER

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory

As of 16 August 2026, this Paper Citation Record lists 36 of 36 outbound references and 0 inbound Pith citation observations for arXiv:1908.06279.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
1908.06279 v1

Coverage vector

measured 36 of 36 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-14T12:56:10.335894Z

measured 36 of 36 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-16T06:30:59.297886+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

36 of 36 outbound references displayed

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  • verified fuzzy33
  • unresolved2
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External citation measurements

No source-named external measurement is stored.

Outbound references

Observation 4c494892-34d4-48a2-bbbc-8af2e1299a58 · outbound

This paper cites Emerging Memory Technologies: Recent Trends and Prospects,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Emerging Memory Technologies: Recent Trends and Prospects,

Reference 1

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raw_fallback, observed 2026-08-14T12:56:10.779855Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.196543Z digest=sha256:0aeee1f7ec81b148f23dc875e513d6aaec72424b0b744aabecf1e7aa29efc4de

Observation 4b385213-85d8-4761-af36-152b68697e0e · outbound

This paper cites An Overview of Nonvolatile Emerging Memories-Spintronics for Working Memories,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory An Overview of Nonvolatile Emerging Memories-Spintronics for Working Memories,

Reference 2

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:56:10.768750Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.201449Z digest=sha256:c432070da78c04bdff87458cfe658b3758aa9e8684503bfbfadf56f0e9fc3ad5

Observation 699fd75b-991a-4cb9-96d0-72ff825c519b · outbound

This paper cites Spin- dependent tunneling conductance of Fe|MgO|Fe sandwiches,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Spin- dependent tunneling conductance of Fe|MgO|Fe sandwiches,

Reference 3

Resolution
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raw_fallback, observed 2026-08-14T12:56:10.756901Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.205793Z digest=sha256:5c0b766a5f6fcd0c974ac5df56ecc3dd1f0d02b79045a84992800ae0b2dcc3a1

Observation bf8d6e2b-2c5d-45f9-9100-40801d4b5dd3 · outbound

This paper cites Current-driven excitation of magnetic multilayers,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Current-driven excitation of magnetic multilayers,

Reference 4

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raw_fallback, observed 2026-08-14T12:56:10.745109Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.209705Z digest=sha256:dbcec3e0038cff4e2a0b880a9f6b1bb43cdd1ebf3e03e70279a08c228e68cc8e

Observation 0202a84b-d843-4fdb-9e84-29455c0c0bd6 · outbound

This paper cites Emission of spin waves by a magnetic multilayer traversed by a current,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Emission of spin waves by a magnetic multilayer traversed by a current,

Reference 5

Resolution
unresolved
no resolver link, observed 2026-08-14T12:56:10.215899Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

source=pdf_text observed=2026-08-14T12:56:10.215899Z digest=sha256:ea21873aa9e11267c052ed1f1a3f963c6ab57c975ed4eac14515a5c75335a1fd

Observation f08b6f5e-8950-441c-8880-b3f87962751d · outbound

This paper cites Spin transfer torques,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Spin transfer torques,

Reference 6

Resolution
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raw_fallback, observed 2026-08-14T12:56:10.727302Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.220159Z digest=sha256:0b7f99fb4365189ffdfe6f342f1f5c1780484fc4d9f5b3698c5a83740965d605

Observation b72ef4cd-4b4c-49d9-a91b-fc9df6eb8df1 · outbound

This paper cites Current-induced torques in magnetic materials,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Current-induced torques in magnetic materials,

Reference 7

Resolution
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raw_fallback, observed 2026-08-14T12:56:10.716121Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.225045Z digest=sha256:80d481e5d4ac2c18dfc781598b590deda93e87bceec955c52baa244a3f5c6413

Observation 352c9d16-77af-4496-9c70-af0e71d97adb · outbound

This paper cites Magnetoresistive Random Access Memory,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Magnetoresistive Random Access Memory,

Reference 8

Resolution
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raw_fallback, observed 2026-08-14T12:56:10.705082Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.229241Z digest=sha256:fbb95c7a0a41688cad25aaf395c71fefbe9c3e0668cc72f5d935f5538e3968d7

Observation 4b982138-3a55-45b7-8db6-67e40a303b23 · outbound

This paper cites Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy,

Reference 9

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:56:10.693126Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.233718Z digest=sha256:eec616b511d6dbab3f1b6f64d2a79255d0036e3e88a34d03b185bd0203c77148

Observation eb3b7216-5f3d-4de0-9d1c-fb758b992548 · outbound

This paper cites Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM,

Reference 10

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:56:10.680810Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.237590Z digest=sha256:05092109284c2163f978a0b52c847ecf02654864b7388b0200d4994b1e2ccd7b

Observation 58d49728-d4a0-4196-b162-89dd5c4f9ed5 · outbound

This paper cites Highly thermally stable sub-20nm magnetic random-access memory based on perpendicular shape anisotropy.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Highly thermally stable sub-20nm magnetic random-access memory based on perpendicular shape anisotropy

Reference 11

Resolution
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local_arxiv, observed 2026-08-14T12:56:10.374028Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.241462Z digest=sha256:839db6a45f69a6b7dfa38eedda9153a95e40d7595dfb8682a94d34b4ac88fe2a

Observation cc12ad60-ee27-4783-a088-e4af86aa47b1 · outbound

This paper cites Recent Developments in Perpendicular Mag- netic Anisotropy Thin Films for Data Storage Applications,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Recent Developments in Perpendicular Mag- netic Anisotropy Thin Films for Data Storage Applications,

Reference 12

Resolution
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Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.245441Z digest=sha256:8acbb3f7037c026092ba7e18e01916e4f337013bcbca3514165e74906e018f09

Observation 4089ea05-18b7-4cb7-9b68-14c45a810046 · outbound

This paper cites Ultrasensitive nanoscale magnetic-field sensors based on resonant spin filtering,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Ultrasensitive nanoscale magnetic-field sensors based on resonant spin filtering,

Reference 13

Resolution
unresolved
no resolver link, observed 2026-08-14T12:56:10.249476Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

source=pdf_text observed=2026-08-14T12:56:10.249476Z digest=sha256:c93e21192cf56a5e355321edc44a7236586fddb5dbef80af81a5b8ddb9cb74e1

Observation 0ab16d92-b42d-4bac-a10c-f87fc3eb8fe8 · outbound

This paper cites Resonant spin- transfer-torque nano-oscillators,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Resonant spin- transfer-torque nano-oscillators,

Reference 14

Resolution
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raw_fallback, observed 2026-08-14T12:56:10.647900Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.253430Z digest=sha256:47cd826bffa2c96f1195721dc519779249248f6bd3aaa27c7ae30af20d57bd6c

Observation a08527a9-67c2-42f5-8484-988ab6229a52 · outbound

This paper cites Role of phase breaking processes on resonant spin transfer torque nano-oscillators,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Role of phase breaking processes on resonant spin transfer torque nano-oscillators,

Reference 15

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:56:10.635492Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.257533Z digest=sha256:43c58f45b7b416abf27a7ec6023e33ba2f28ece911bfa14bce15c5f7031b4c91

Observation 129a30f6-1be3-4fb1-8250-5ba56b30a7e0 · outbound

This paper cites Band-pass Fabry-P `erot magnetic tunnel junctions,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Band-pass Fabry-P `erot magnetic tunnel junctions,

Reference 16

Resolution
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raw_fallback, observed 2026-08-14T12:56:10.624222Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.261777Z digest=sha256:7f4afd890154f1a36c68ca45e60b142283acdfd0ac4eef4b969408e2482f837e

Observation f4c32ed4-5f22-4928-827c-c4f0e83afa71 · outbound

This paper cites Datta, Electronic transport in mesoscopic systems.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Datta, Electronic transport in mesoscopic systems

Reference 17

Resolution
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Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.265398Z digest=sha256:f0a2405fed7329caaa5d00c21338a8e27d802d610a01c48afdcab83dbac01129

Observation c1cb7aac-df4e-431c-ad68-2d69291acd26 · outbound

This paper cites Cambridge University Press, 2005.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Cambridge University Press, 2005

Reference 18

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raw_fallback, observed 2026-08-14T12:56:10.599884Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.269106Z digest=sha256:71d0d6158bff5b1dbd70ccf4c87a453270ae2ea8544df1b9ac466556ebbbdb72

Observation 3733e739-f881-4bf1-9f28-68ddfa5bc096 · outbound

This paper cites Quantum transport with spin dephasing: A nonequlibrium Green’s function approach,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Quantum transport with spin dephasing: A nonequlibrium Green’s function approach,

Reference 19

Resolution
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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.272742Z digest=sha256:355e89793bdc8a9525cd4597b3de36016d47aedb70de5d22af9a343a338c8534

Observation d8795126-c883-4dd5-8d19-b79e304f8b92 · outbound

This paper cites V oltage asym- metry of spin-transfer torques,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory V oltage asym- metry of spin-transfer torques,

Reference 20

Resolution
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raw_fallback, observed 2026-08-14T12:56:10.576208Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.276383Z digest=sha256:e7da1e03de8cc472f598e9f0c107836fc2ecd33b1c56f6ea554be80da668e68a

Observation 520f6066-a8c5-46c6-98cd-bfb1606b3dbf · outbound

This paper cites Modeling of nanoscale devices,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Modeling of nanoscale devices,

Reference 21

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.280309Z digest=sha256:a4019508d17ac1b9ac3453531c85cbe211fe1a15cd8eb3d27960d0c2a7695a5f

Observation 4752bb29-cf37-4579-95e0-8c4b09149de3 · outbound

This paper cites Quantum transport simulation of tunneling based spin torque transfer (STT) devices: Design trade offs and torque efficiency,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Quantum transport simulation of tunneling based spin torque transfer (STT) devices: Design trade offs and torque efficiency,

Reference 22

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Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.284378Z digest=sha256:30529333b459f7567d48c59f9387edf8d5bbad494d2116f670b04211d7386409

Observation d5654337-99a4-4135-9f48-9244cd50c255 · outbound

This paper cites Langevin-dynamics study of the dynamical properties of small magnetic particles,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Langevin-dynamics study of the dynamical properties of small magnetic particles,

Reference 23

Resolution
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Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.288928Z digest=sha256:91e26dfda764a7dabfec8634208a73d0c5bd6504f189399da5bd9ddb1ef4e887

Observation 06c62240-60fc-434c-a416-21f16ff0d88c · outbound

This paper cites A perpendicular- anisotropy CoFeB–MgO magnetic tunnel junction,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory A perpendicular- anisotropy CoFeB–MgO magnetic tunnel junction,

Reference 24

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:56:10.530552Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.292766Z digest=sha256:1cc392253d17388f365f659d726f0fb621501288359a0748d6e5a6c0e2c73304

Observation bcdc7ca9-7b69-4fcc-a1a0-9a35da0f57c3 · outbound

This paper cites Spin torque switching of perpendicular Ta—CoFeB—MgO-based magnetic tunnel junctions,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Spin torque switching of perpendicular Ta—CoFeB—MgO-based magnetic tunnel junctions,

Reference 25

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:56:10.520215Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.296674Z digest=sha256:ac31ab4c359e6cf38ba633c9f54aa770e28dde54cedd0790bcb317ae3fc5ad28

Observation f7f3e4be-a597-491d-9fdb-308285571901 · outbound

This paper cites Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junc- tion diameter of 11nm,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junc- tion diameter of 11nm,

Reference 26

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:56:10.509782Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.300360Z digest=sha256:fbd5e3fb4b29f45f275e79d6860cdfe3b170a7dd29a90483bfc26ee79b606f60

Observation d87c7b84-645d-440f-86bc-c7932cba84c6 · outbound

This paper cites Quantitative measurement of voltage dependence of spin-transfer torque in MgO-based magnetic tunnel junctions,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Quantitative measurement of voltage dependence of spin-transfer torque in MgO-based magnetic tunnel junctions,

Reference 27

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:56:10.497446Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.303785Z digest=sha256:8f84b257bcf1a3b34ef000c23260ea968d7fbe61f323bef8ee38d69a28bd6bb0

Observation 60e79809-f7f4-4f76-b3c4-e81ddd99926a · outbound

This paper cites Bias-driven large power microwave emission from MgO-based tunnel magnetoresistance devices,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Bias-driven large power microwave emission from MgO-based tunnel magnetoresistance devices,

Reference 28

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:56:10.485482Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.307167Z digest=sha256:9779c4ca9989d392ec3c3df115773a89b54dbad71ec6d9b52abde9a186ee076d

Observation 56477fae-563c-413d-a862-c9c53f3b4a01 · outbound

This paper cites Chiral spin torque at magnetic domain walls,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Chiral spin torque at magnetic domain walls,

Reference 29

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:56:10.473293Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.311196Z digest=sha256:119b2e47729b1e1a5b2f893aa42efa9375edca38ff079c6bed9d21916ef2b7c1

Observation 31a9475b-eaef-441d-8ba6-45255501bef0 · outbound

This paper cites Domain-wall velocities of up to 750 m s-1 driven by exchange-coupling torque in synthetic antiferromagnets,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Domain-wall velocities of up to 750 m s-1 driven by exchange-coupling torque in synthetic antiferromagnets,

Reference 30

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:56:10.461012Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.314684Z digest=sha256:9e53ed12091ac47cb6aa912de3aee3b97c7347d3af28168cb82bdf3287d8a95c

Observation c32da711-368c-42bf-bff0-fa15fc3b2e1f · outbound

This paper cites Anomalous bias dependence of spin torque in magnetic tunnel junc- tions,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Anomalous bias dependence of spin torque in magnetic tunnel junc- tions,

Reference 31

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:56:10.449335Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.318184Z digest=sha256:e9b5ddb13c02a0d7fa1aabf9f3a88930099d53a71936ba76adf3b44bf63bcf48

Observation 42ed8c4a-a7f1-4214-b7ac-965c91944cff · outbound

This paper cites Conductance and exchange coupling of two ferro- magnets separated by a tunneling barrier,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Conductance and exchange coupling of two ferro- magnets separated by a tunneling barrier,

Reference 32

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:56:10.437124Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.321602Z digest=sha256:53c9ba7c75a32087d0c7b23a95a85b1e16813c4dc63d9db942306b1f840a881c

Observation 9c9e9d1d-eec7-49ae-b6ab-a6f34e620ba4 · outbound

This paper cites Antireflection coating for miniband transport and Fabry-P ´erot resonances in GaAs/AlGaAs superlattices,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Antireflection coating for miniband transport and Fabry-P ´erot resonances in GaAs/AlGaAs superlattices,

Reference 33

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:56:10.424725Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.325308Z digest=sha256:537ce1827e968de79ceaa1b1253dc752accccdd6e340fc30f427f9b0fd7ec41e

Observation 4c3c406c-ad19-480e-8feb-7d66867483fc · outbound

This paper cites Switching speed distribution of spin- torque-induced magnetic reversal,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Switching speed distribution of spin- torque-induced magnetic reversal,

Reference 34

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:56:10.412169Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.328957Z digest=sha256:7b4210f9e2b403c17a13c64425b9c487ddd088dcbb3089839b36b9c0bf6bef7a

Observation 4de831ea-061b-451a-8e65-da23ef3a6847 · outbound

This paper cites Spin-transfer pulse switching: From the dynamic to the thermally activated regime,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory Spin-transfer pulse switching: From the dynamic to the thermally activated regime,

Reference 35

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:56:10.398746Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.332579Z digest=sha256:b84c679720c1582e8237006dbf118d06397c6280d09a69e0943d5496b338a09f

Observation 61253a60-8df1-476f-916c-2f1ed216372b · outbound

This paper cites High Performance MRAM with Spin-Transfer-Torque and V oltage-Controlled Magnetic Anisotropy Effects,.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory High Performance MRAM with Spin-Transfer-Torque and V oltage-Controlled Magnetic Anisotropy Effects,

Reference 36

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:56:10.386888Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:56:10.335894Z digest=sha256:0972620f67ee6d49331ad2d5184f5c04c033d6b265ea52169dbe159ca2d04b20

Pith citing papers

No inbound Pith citation observations are available.