Paper Citation Record · LEDGER

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect

As of 8 August 2026, this Paper Citation Record lists 34 of 34 outbound references and 0 inbound Pith citation observations for arXiv:2506.06976.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2506.06976 v1

Coverage vector

measured 34 of 34 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-07T05:52:11.925684Z

measured 34 of 34 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-07T06:34:17.273281+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

34 of 34 outbound references displayed

verified exact20
verified fuzzy11
unresolved2
parse uncertain0
malformed identifier0
metadata mismatch1

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation 786e8e31-b60a-4ee8-bba2-4e1589ed9f8e · outbound

This paper cites The rise of the GeSn laser,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect The rise of the GeSn laser,

Reference 1

Resolution: verified exact; doi, observed 2026-08-07T05:52:12.131005Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation 2352fc07-7def-4e17-b845-e36c250a210e · outbound

This paper cites Si–Ge–Sn alloys: From growth to applications,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Si–Ge–Sn alloys: From growth to applications,

Reference 2

Resolution: verified exact; doi, observed 2026-08-07T05:52:12.122596Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation 865c068d-961f-4b7a-81e4-a0e9af9faf17 · outbound

This paper cites Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors,

Reference 3

Resolution: verified exact; doi, observed 2026-08-07T05:52:12.112645Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation 94cf8b3d-7b17-47ab-aac7-a412a6f593a9 · outbound

This paper cites Lasing in direct-bandgap GeSn alloy grown on Si,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Lasing in direct-bandgap GeSn alloy grown on Si,

Reference 4

Resolution: verified exact; doi, observed 2026-08-07T05:52:12.103443Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation e3e04a5d-ad10-42e7-aeb4-5465e54390b5 · outbound

This paper cites Group IV Photonics: Driving Integrated Optoelectronics,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Group IV Photonics: Driving Integrated Optoelectronics,

Reference 5

Resolution: verified exact; doi, observed 2026-08-07T05:52:12.094623Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation 0b23cb66-9faf-405b-8a03-b44e231872c6 · outbound

This paper cites Advances in GeSn alloys for MIR applications,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Advances in GeSn alloys for MIR applications,

Reference 6

Resolution: metadata mismatch; raw_fallback, observed 2026-08-07T05:52:12.336747Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation ef207198-0a8b-4b21-b3c4-a5ca0715b1cd · outbound

This paper cites Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence,

Reference 7

Resolution: verified exact; doi, observed 2026-08-07T05:52:12.085551Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation e5e00bbb-258f-47e4-ad14-eed6c3ca0d9a · outbound

This paper cites Advances in SiGeSn technology,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Advances in SiGeSn technology,

Reference 8

Resolution: verified exact; raw_fallback, observed 2026-08-07T05:52:12.275964Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation b72f7511-2545-4e12-8bf7-f12ed0cd1c18 · outbound

This paper cites The history and future of semiconductor heterostructures,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect The history and future of semiconductor heterostructures,

Reference 9

Resolution: verified exact; doi, observed 2026-08-07T05:52:12.076172Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation 89ae1e54-f2f0-46bd-b07e-7cd5473940c6 · outbound

This paper cites an unresolved cited work.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Unresolved cited work

Reference 10

Resolution: unresolved; raw_fallback, observed 2026-08-07T05:52:12.448613Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation 97ba324a-7568-4cff-b42a-801574ad8e00 · outbound

This paper cites Theory of Internal Photoemission,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Theory of Internal Photoemission,

Reference 11

Resolution: verified exact; doi, observed 2026-08-07T05:52:12.066687Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation 67abb4c6-b2c4-4e5e-8941-4e3c3d33f8d7 · outbound

This paper cites Band discontinuities at heterojunctions between crystalline and amorphous silicon,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Band discontinuities at heterojunctions between crystalline and amorphous silicon,

Reference 12

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T05:52:12.439397Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation ca7692d3-955d-4e04-9a21-b71e86d82b38 · outbound

This paper cites SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy,

Reference 13

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T05:52:12.431053Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation 6d71f329-8e49-407d-9239-1dbed6775871 · outbound

This paper cites Energy band discontinuities in heterojunctions measured by internal photoemission,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Energy band discontinuities in heterojunctions measured by internal photoemission,

Reference 14

Resolution: verified exact; doi, observed 2026-08-07T05:52:12.055333Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation b26b308c-b79b-472d-8f93-fb220a9770cc · outbound

This paper cites Interface measurements of heterojunction band lineups with the Vanderbilt free-electron laser,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Interface measurements of heterojunction band lineups with the Vanderbilt free-electron laser,

Reference 15

Resolution: verified exact; doi, observed 2026-08-07T05:52:12.045374Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation 6ba73554-8c5e-4f1e-b176-bf8f1e8e2687 · outbound

This paper cites Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study,

Reference 16

Resolution: verified exact; doi, observed 2026-08-07T05:52:12.035990Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation 802a72ae-4919-4433-8b97-d2750ec9ffba · outbound

This paper cites Physics of Internal Photoemission and Its Infrared Applications in the Low-Energy Limit,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Physics of Internal Photoemission and Its Infrared Applications in the Low-Energy Limit,

Reference 17

Resolution: verified exact; doi, observed 2026-08-07T05:52:12.026786Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation 91eca3c3-32c7-45e1-88a7-5e87f37bcb68 · outbound

This paper cites Band Offsets of III–V and II–VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Band Offsets of III–V and II–VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy,

Reference 18

Resolution: verified exact; doi, observed 2026-08-07T05:52:12.017482Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation 40f1a0db-e8cb-444b-aa45-9fe7b90bde9c · outbound

This paper cites Direct-gap Ge/GeSn/Si and GeSn/Ge/Si heterostructures,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Direct-gap Ge/GeSn/Si and GeSn/Ge/Si heterostructures,

Reference 19

Resolution: unresolved; no resolver link, observed 2026-08-07T05:52:11.877096Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 655f9b0b-4302-4c6c-8dba-573d5c756d6c · outbound

This paper cites Weisbuch and B.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Weisbuch and B

Reference 20

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T05:52:12.422745Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation 16c34caa-4262-4d06-8fff-330263d7a148 · outbound

This paper cites Internal photoemission of electrons and holes from (100)Si into HfO2,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Internal photoemission of electrons and holes from (100)Si into HfO2,

Reference 21

Resolution: verified exact; doi, observed 2026-08-07T05:52:12.005387Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation 97f6fa0f-afb1-4800-90bd-de78b1d49bb4 · outbound

This paper cites Growth and Characterization of Epitaxial Ge1-xSnx Alloys and Heterostructures Using a Commercial CVD System,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Growth and Characterization of Epitaxial Ge1-xSnx Alloys and Heterostructures Using a Commercial CVD System,

Reference 22

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T05:52:12.414091Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation 8bba2c18-3372-4c7f-8629-91960d3c8cfa · outbound

This paper cites Strain engineering in epitaxial Ge1−xSnx: a path towards low-defect and high Sn-content layers.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Strain engineering in epitaxial Ge1−xSnx: a path towards low-defect and high Sn-content layers

Reference 23

Resolution: verified exact; doi, observed 2026-08-07T05:52:11.994571Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation 33de60a3-5b0a-4431-affc-905fd971c11a · outbound

This paper cites Systematic study of Si-based GeSn light- emitting diodes towards mid-infrared applications,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Systematic study of Si-based GeSn light- emitting diodes towards mid-infrared applications,

Reference 24

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T05:52:12.405235Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation bf2c9bc2-272f-4228-8bcb-21a4320c1c63 · outbound

This paper cites Si-based GeSn photodetectors towards mid- infrared imaging applications,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Si-based GeSn photodetectors towards mid- infrared imaging applications,

Reference 25

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T05:52:12.394969Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation 48d3328e-77fc-47be-a489-5da02e0e63d9 · outbound

This paper cites Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications,

Reference 26

Resolution: verified exact; doi, observed 2026-08-07T05:52:11.984904Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation bea131a3-b916-4d33-93e5-487b6f8340c8 · outbound

This paper cites Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing,

Reference 27

Resolution: verified exact; doi, observed 2026-08-07T05:52:11.975133Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation 696249c2-745a-4168-b35d-8f14e5cf189c · outbound

This paper cites Internal photoemission at interfaces of high-κ insulators with semiconductors and metals,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Internal photoemission at interfaces of high-κ insulators with semiconductors and metals,

Reference 28

Resolution: verified exact; doi, observed 2026-08-07T05:52:11.965672Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation 6685b3f6-2c86-4f1d-a364-1e583d0c3297 · outbound

This paper cites Interface barrier energy determination from voltage dependence of photoinjected currents,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Interface barrier energy determination from voltage dependence of photoinjected currents,

Reference 29

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T05:52:12.385695Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation c5635753-e53c-4fbb-b8cb-a03c06d04f43 · outbound

This paper cites Surface and bulk contributions to ultraviolet photoemission spectra of silicon,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Surface and bulk contributions to ultraviolet photoemission spectra of silicon,

Reference 30

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T05:52:12.375866Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation ad398fc7-a230-4d5d-9c18-6178095f9f7c · outbound

This paper cites Disorder and the Optical- Absorption Edge of Hydrogenated Amorphous Silicon.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Disorder and the Optical- Absorption Edge of Hydrogenated Amorphous Silicon

Reference 31

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T05:52:12.365707Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation cc3cb8dd-d0a4-4ccf-9b89-75aa87c92039 · outbound

This paper cites Near-Bandgap Infrared Absorption Properties of HgCdTe.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Near-Bandgap Infrared Absorption Properties of HgCdTe

Reference 32

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T05:52:12.356608Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation 6d1d7eba-4fbf-462c-87b7-5c3e47f7f9a4 · outbound

This paper cites Photoluminescence investigation of the indirect band gap and shallow impurities in icosahedral B12As2.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Photoluminescence investigation of the indirect band gap and shallow impurities in icosahedral B12As2

Reference 33

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T05:52:12.347265Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Observation 698d2f57-8e98-43e1-b4a0-160c097e3bf5 · outbound

This paper cites Design of a Si-based lattice-matched room- temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode,.

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect Design of a Si-based lattice-matched room- temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode,

Reference 34

Resolution: verified exact; doi, observed 2026-08-07T05:52:11.955841Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-07T06:34:17.273281+00:00.

Pith citing papers

No inbound Pith citation observations are available.