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Paper Citation Record · LEDGER

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors

As of 16 August 2026, this Paper Citation Record lists 37 of 37 outbound references and 0 inbound Pith citation observations for arXiv:1908.05270.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
1908.05270 v1

Coverage vector

measured 37 of 37 reference resolution

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Source: paper_references, paper_reference_links, observed 2026-08-14T13:29:41.539779Z

measured 37 of 37 standing notices

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Source: scholarly_work_events, retraction_status_cache, observed 2026-08-16T06:30:59.297886+00:00

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Pith citing papers itemized under the disclosed page cap.

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Reference resolution

37 of 37 outbound references displayed

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External citation measurements

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Outbound references

Observation 5c61b203-97ba-4956-bc95-c1ab2b6174ff · outbound

This paper cites Transport scattering time probed through rf admittance of a graphene capacitor.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Transport scattering time probed through rf admittance of a graphene capacitor

Reference 1

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T13:29:41.334408Z digest=sha256:373978db128d2ea3d7feafb7c67a5dc31919a627100741797da41accc958ac5e

Observation ad9c405a-591d-4811-9466-bf3b88800b0b · outbound

This paper cites Supercollision cooling in undoped graphene.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Supercollision cooling in undoped graphene

Reference 2

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source=pdf_text observed=2026-08-14T13:29:41.340655Z digest=sha256:5f8ffa92c178d56d335c0278b079a07ba6e6444a988f5c16e45a2f8753768136

Observation bf7404be-5f4c-4730-b3b9-1f1363e74f83 · outbound

This paper cites Single carbon nanotube transistor at GHz frequency.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Single carbon nanotube transistor at GHz frequency

Reference 3

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source=pdf_text observed=2026-08-14T13:29:41.346235Z digest=sha256:4ccaab2b168125aa555c520a108fca91d5cc724fb35954a9325f04796bea322d

Observation 5661b317-eabc-44a0-aee3-c3bbc8e16838 · outbound

This paper cites An On-Demand Coherent Single-Electron Source.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors An On-Demand Coherent Single-Electron Source

Reference 4

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source=pdf_text observed=2026-08-14T13:29:41.351619Z digest=sha256:4f4f9bfffdb2a11beba17f4060ff2eda857e73f91bd838c91aef7b106e30b3b2

Observation 518855d0-b12b-49d2-a1ab-930251e91123 · outbound

This paper cites Radio frequency electrical transduction of graphene mechanical resonators.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Radio frequency electrical transduction of graphene mechanical resonators

Reference 5

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source=pdf_text observed=2026-08-14T13:29:41.357699Z digest=sha256:69131d7b7a7ed51e284cc72d2e4ce049e6499c330df3b2c34b0d624ec0af9edf

Observation 15cc14c0-e4a3-4a35-9f18-58f57b3a46d4 · outbound

This paper cites Surface states at steam-grown silicon-silicon dioxide interfaces.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Surface states at steam-grown silicon-silicon dioxide interfaces

Reference 6

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source=pdf_text observed=2026-08-14T13:29:41.363097Z digest=sha256:389f4d3a757846c77a20754720a070f1baa3fee24b4ddeed07d349c9e55adbce

Observation 191babb4-bb8b-404c-966b-cab1fb3013aa · outbound

This paper cites Ultra-long wavelength Dirac plasmons in graphene capacitors.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Ultra-long wavelength Dirac plasmons in graphene capacitors

Reference 7

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source=pdf_text observed=2026-08-14T13:29:41.369870Z digest=sha256:1b77d63980beba56b30d7cd3cacf86ccea0363554652914fbff4866824ef8cbc

Observation 2090e64c-46b1-4f7d-9d50-16dc8c84c8b5 · outbound

This paper cites A graphene Zener–Klein 9 transistor cooled by a hyperbolic substrate.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors A graphene Zener–Klein 9 transistor cooled by a hyperbolic substrate

Reference 8

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source=pdf_text observed=2026-08-14T13:29:41.375343Z digest=sha256:9779507c0f026de75c3ce37cf0e0e7b9d007992c61301985124999d8ce02d5e9

Observation ab3975a7-1167-4719-a0f8-c685fde97010 · outbound

This paper cites Electrically Detected Interferometry of Majorana Fermions in a Topological Insulator.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Electrically Detected Interferometry of Majorana Fermions in a Topological Insulator

Reference 9

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source=pdf_text observed=2026-08-14T13:29:41.382462Z digest=sha256:646eeaea81c2046a110178f8248f63b7de66b05aa07345398c744a6648cd783c

Observation 7ad86a0c-f12a-464c-98fa-1e290bdac9f1 · outbound

This paper cites Weak-link Josephson Junctions Made from Topological Crystalline Insulators.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Weak-link Josephson Junctions Made from Topological Crystalline Insulators

Reference 10

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source=pdf_text observed=2026-08-14T13:29:41.388367Z digest=sha256:8f39669940f6ebb0c95196d0f131973bb6b71a83fa043caa81abca6319afd95e

Observation 895558c2-649d-482e-94c9-36291c69e53e · outbound

This paper cites Proximity-Induced Superconductivity and Quantum Interference in Topological Crystalline Insulator SnTe Thin-Film Devices.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Proximity-Induced Superconductivity and Quantum Interference in Topological Crystalline Insulator SnTe Thin-Film Devices

Reference 11

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source=pdf_text observed=2026-08-14T13:29:41.394342Z digest=sha256:426514d2d7b60af49f0fb4642d586a3b1313276a0edd496dc99bbd0015b2662a

Observation 754f94e4-7610-415d-9453-58ac0a482169 · outbound

This paper cites Gapless Andreev bound states in the quantum spin Hall insulator HgTe.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Gapless Andreev bound states in the quantum spin Hall insulator HgTe

Reference 12

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source=pdf_text observed=2026-08-14T13:29:41.401662Z digest=sha256:dab248cd28cb277c3422b8937dc7ecb30781f5ca0ff5a846fe1a9927ec916fd2

Observation 3a1b7c3d-e750-489d-9f0a-0e969de4138c · outbound

This paper cites Dynamical separation of bulk and edge transport in HgTe-based 2D topological insulators.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Dynamical separation of bulk and edge transport in HgTe-based 2D topological insulators

Reference 13

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source=pdf_text observed=2026-08-14T13:29:41.407153Z digest=sha256:a6061a9c72aaa955aea10a2f50927d982d760aa03a05f1819e7bcae43b186ae6

Observation e3f0cbc2-e10d-4426-84a2-e332f15817a7 · outbound

This paper cites Observation of Volkov-Pankratov states in topological HgTe heterojunctions using high-frequency compressibility.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Observation of Volkov-Pankratov states in topological HgTe heterojunctions using high-frequency compressibility

Reference 14

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source=pdf_text observed=2026-08-14T13:29:41.413458Z digest=sha256:07d3bbc3e4b115c1fcfdca2dadf9a188d200666551be7cd79316115447e38ee6

Observation 4f31810d-66ff-4c38-927c-f3da2645ba6f · outbound

This paper cites rf Quantum Capacitance of the Topological Insulator Bi2Se3 in the Bulk Depleted Regime for Field-Effect Transistors.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors rf Quantum Capacitance of the Topological Insulator Bi2Se3 in the Bulk Depleted Regime for Field-Effect Transistors

Reference 15

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T13:29:41.418954Z digest=sha256:f5c69237b6656c6771b4925fb065374694a697b4df36d1124e06ac8dd130c133

Observation f4936a35-b0e9-401b-bad8-30b8bdec2171 · outbound

This paper cites van der Waals Epitaxial Growth of Atomically Thin Bi 2 Se 3 and Thickness-Dependent Topological Phase Transition.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors van der Waals Epitaxial Growth of Atomically Thin Bi 2 Se 3 and Thickness-Dependent Topological Phase Transition

Reference 16

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source=pdf_text observed=2026-08-14T13:29:41.424187Z digest=sha256:3e4880998b8ddd576ceb7f16a562ee914e81e6e6e30840b30ebeea264546b981

Observation f583d108-17c5-4085-938a-ec23eb132cc0 · outbound

This paper cites Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

Reference 17

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source=pdf_text observed=2026-08-14T13:29:41.429488Z digest=sha256:f0770afd4068324aca788005c82a0ecbedb5cda4b1be5327238b2938472739b2

Observation 149ac400-167d-488c-ae6a-f6b05dd32d90 · outbound

This paper cites Controlling Spin Relaxation in Hexagonal BN-Encapsulated Graphene with a Transverse Electric Field.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Controlling Spin Relaxation in Hexagonal BN-Encapsulated Graphene with a Transverse Electric Field

Reference 18

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source=pdf_text observed=2026-08-14T13:29:41.435502Z digest=sha256:fee6d9687beb98381fcccc4221de7232e855fc2b3bfcdf450dfbbbd4e60d72ba

Observation ed90d3be-4a48-4372-85c8-0f382e786452 · outbound

This paper cites A Raman and Far-Infrared Investigation of Phonons in the Rhombohedra1 V2-VI3 Compounds.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors A Raman and Far-Infrared Investigation of Phonons in the Rhombohedra1 V2-VI3 Compounds

Reference 19

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source=pdf_text observed=2026-08-14T13:29:41.442277Z digest=sha256:b8f1ad96a7e92f5cfb75d0a9bc3f21eaf6d29c18673866588994ef956984dd16

Observation 70347402-4e31-446d-a5b3-6eb3e9ab487b · outbound

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RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Unresolved cited work

Reference 20

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source=pdf_text observed=2026-08-14T13:29:41.447375Z digest=sha256:e3aaa2f1f03c12494e837118fc24438836a5c716301188fe3583ca2f58de4ee2

Observation cfdccefd-2cc3-42f8-b337-3e7555ed5f8a · outbound

This paper cites Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices

Reference 21

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source=pdf_text observed=2026-08-14T13:29:41.454091Z digest=sha256:10240f72ecf4758d7d496ba94f2fe06add4d32224b141b9a81314162fb54d6c5

Observation c6584be3-18ef-49dd-9bbc-bd2f34771b80 · outbound

This paper cites Boron nitride substrates for high-quality graphene electronics.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Boron nitride substrates for high-quality graphene electronics

Reference 22

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source=pdf_text observed=2026-08-14T13:29:41.459259Z digest=sha256:2c55a1e5f71eace6f771a4b2329773377d863c3596fa86f04997c5c03ea8c15e

Observation a925e184-c86a-42df-a4c9-46dd4b9dbfcd · outbound

This paper cites Observation of a large-gap topological-insulator class with a single Dirac cone on the surface.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

Reference 23

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source=pdf_text observed=2026-08-14T13:29:41.463922Z digest=sha256:d463742dc8a2e199aea37838f0fe6d1b828dab2e7890d3555331fa328261baa8

Observation d242f97d-ff25-45d1-951e-cc6928e159e6 · outbound

This paper cites Bulk Fermi surface coexistence with Dirac surface state in Bi2Se3 : A comparison of photoemission.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Bulk Fermi surface coexistence with Dirac surface state in Bi2Se3 : A comparison of photoemission

Reference 24

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source=pdf_text observed=2026-08-14T13:29:41.469843Z digest=sha256:c91322e5b8546d4e5d3cf415957badbd801173a040e981f65fa09cd6ae39da50

Observation 297bd77e-2e89-47ef-afef-2890c135252b · outbound

This paper cites Interaction phenomena in graphene seen through quantum capacitance.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Interaction phenomena in graphene seen through quantum capacitance

Reference 25

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source=pdf_text observed=2026-08-14T13:29:41.476744Z digest=sha256:6a4b156028b381acd9a5d7185aa22b257c9d712b301aaeea908cf0023e835676

Observation def01ee9-3727-4cd3-ada2-93e1abac3adf · outbound

This paper cites Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3

Reference 26

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source=pdf_text observed=2026-08-14T13:29:41.483044Z digest=sha256:41ae0f3040f0df1a209b4ad65509aa8793a27ba741c8f610c36770ce9242bdb1

Observation b64d3bf2-e19c-4dfe-b29a-db30a4fcb226 · outbound

This paper cites Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi(2)Se(3).

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi(2)Se(3)

Reference 27

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source=pdf_text observed=2026-08-14T13:29:41.488681Z digest=sha256:20542078847bfd9e0437ab35adc0c16f1b3c909930645845a1eba760432de484

Observation 0c5f46ec-281e-49ce-8172-f8eb7a17512f · outbound

This paper cites Strong surface scattering in ultrahigh-mobility Bi2Se3 topological insulator crystals.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Strong surface scattering in ultrahigh-mobility Bi2Se3 topological insulator crystals

Reference 28

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T13:29:41.495208Z digest=sha256:379287499dd0f465ec777119ff5869b94c2a235e15ddb19b5474305b8c0db7a6

Observation 98f72ff6-c833-4d3e-92f9-5bb5dd936cd1 · outbound

This paper cites Optically Active Lattice Vibrations in Bi2Se3.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Optically Active Lattice Vibrations in Bi2Se3

Reference 29

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T13:29:41.500197Z digest=sha256:982c14012aa9fd21d931523ca7137e38d07baf9019df85ca941b5c48aef1f503

Observation 425cedea-6959-42c2-858d-c45e3f474d53 · outbound

This paper cites Magneto-Optics of Massive Dirac Fermions in Bulk Bi2Se3.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Magneto-Optics of Massive Dirac Fermions in Bulk Bi2Se3

Reference 30

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source=pdf_text observed=2026-08-14T13:29:41.504815Z digest=sha256:583e09bf296436b042186035192a155b3e45c85a86e79fd0aef7a0df2eb600ec

Observation eee0be4f-4561-489e-a498-c905d81a068c · outbound

This paper cites Phase Separation of Dirac Electrons in Topological Insulators at the Spatial Limit.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Phase Separation of Dirac Electrons in Topological Insulators at the Spatial Limit

Reference 31

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T13:29:41.509513Z digest=sha256:873949a6c464d19241e8edecc31ee6f64d771759cab3d92441a45fb8275cfcf1

Observation fa89bc1e-e8e4-4b0f-88d0-7d35e98f3337 · outbound

This paper cites Fermi-level stabilization in the topological insulators Bi2Se3 and Bi2Te3: Origin of the surface electron gas.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Fermi-level stabilization in the topological insulators Bi2Se3 and Bi2Te3: Origin of the surface electron gas

Reference 32

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T13:29:41.515208Z digest=sha256:51ed42e4d702b7713a158670d4eef8464a1b450d3b6d3fc1e97231ce1f486e4a

Observation ea6d8ad4-668a-4712-adb7-eb65fceab8ed · outbound

This paper cites Direct observation of decoupled Dirac states at the interface between topological and normal insulators.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Direct observation of decoupled Dirac states at the interface between topological and normal insulators

Reference 33

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raw_fallback, observed 2026-08-14T13:29:41.680390Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T13:29:41.522314Z digest=sha256:317d2dc7e24c4b15ad20f16b029cea19cdba45de6b6ad887f7f7405dc4cacf93

Observation c506e74b-33cf-4c9d-8499-579588ac5f25 · outbound

This paper cites Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering

Reference 34

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raw_fallback, observed 2026-08-14T13:29:41.661952Z

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source=pdf_text observed=2026-08-14T13:29:41.526822Z digest=sha256:5ed4d7955c9ffa702d9b435311cd05357203686475ab049748ed72cd25ba6f6a

Observation 031d9e6c-5647-4e6b-a46f-3780af842f0a · outbound

This paper cites Molecular beam epitaxial growth and electronic transport properties of high quality topological insulator Bi 2 Se 3 thin films on hexagonal boron nitride.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Molecular beam epitaxial growth and electronic transport properties of high quality topological insulator Bi 2 Se 3 thin films on hexagonal boron nitride

Reference 35

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raw_fallback, observed 2026-08-14T13:29:41.644886Z

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No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T13:29:41.530988Z digest=sha256:3ac838bbe670437d368e6ba7247ff2568dd36d8ac138eb74554d920b6452e436

Observation c16cffc1-9ac9-4f63-8b67-851b1f873104 · outbound

This paper cites Discovery of a Weyl Fermion semimetal and topological Fermi arcs.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Discovery of a Weyl Fermion semimetal and topological Fermi arcs

Reference 36

Resolution
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raw_fallback, observed 2026-08-14T13:29:41.628090Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T13:29:41.535198Z digest=sha256:4443e20a26e7461ea3d7aa58a1e85aa73b41137f07fed0a49338dacb211ff67a

Observation a485b056-b500-42df-9497-213b1bbdf890 · outbound

This paper cites Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe2.

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe2

Reference 37

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T13:29:41.609584Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T13:29:41.539779Z digest=sha256:f70346dd56d198742cd86dd6855f8ab97aded7290ace2f6f3fbc4e36eb3fb4a3

Pith citing papers

No inbound Pith citation observations are available.