Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments
classification
⚛️ physics.ins-det
hep-ex
keywords
effectscommercialfieldmagneticpowerradiationundercarbide
read the original abstract
The radiation hardness of commercial Silicon Carbide and Gallium Nitride power MOSFETs is presented in this paper, for Total Ionizing Dose effects and Single Event Effects, under gamma, neutrons, protons and heavy ions. Similar tests are discussed for commercial DC-DC converters, also tested in operation under magnetic field.
This paper has not been read by Pith yet.
discussion (0)
Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.