Ultrafast Carrier Dynamics in VO$_2$ across the Pressure-Induced Insulator-to-Metal Transition

2); (2) Technische Universit\"at Dresden; (3) University of Warsaw; (4) Oak Ridge National Laboratory; (5) Vanderbilt University; Alexej Pashkin (1) ((1) Helmholtz-Zentrum Dresden-Rossendorf; Germany; Harald Schneider (1); Johannes M. Braun (1; Lynn A. Boatner (4)

arxiv: 1708.08913 · v1 · pith:WZDQRG66new · submitted 2017-08-29 · ❄️ cond-mat.str-el

Ultrafast Carrier Dynamics in VO₂ across the Pressure-Induced Insulator-to-Metal Transition

Johannes M. Braun (1 , 2) , Harald Schneider (1) , Manfred Helm (1 , Rafa{\l} Mirek (3) , Lynn A. Boatner (4) , Robert E. Marvel (5) , Richard F. Haglund (5)

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Alexej Pashkin (1) ((1) Helmholtz-Zentrum Dresden-Rossendorf Germany (2) Technische Universit\"at Dresden (3) University of Warsaw Poland (4) Oak Ridge National Laboratory TN USA (5) Vanderbilt University TN USA)

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classification ❄️ cond-mat.str-el

keywords electronicpressure-inducedtransitionultrafastacrossamountbandwidth-controlledbehavior

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We utilize near-infrared pump and mid-infrared probe spectroscopy to investigate the ultrafast electronic response of pressurized VO$_2$. Distinct pump-probe signals and a pumping threshold behavior are observed even in the pressure-induced metallic state showing a noticeable amount of localized electronic states. Our results are consistent with a scenario of a bandwidth-controlled Mott-Hubbard transition.

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Ultrafast Carrier Dynamics in VO₂ across the Pressure-Induced Insulator-to-Metal Transition

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