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Integrity report for Parameter extraction of Extended Floating Gate Field Effect Transistors (EGFETs): Estimating the threshold voltage, series resistance, and mobility degradation from I-V measurements

A machine-verified record of the checks Pith has run against this paper: detector runs, findings, signed bundle events, and canonical identifiers.

arXiv:2307.11101 · pith:2023:X2UTHSUG4I2BHGDR6I3CAYQN2K

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Paper page arXiv integrity.json bundle.json

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Signed record

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