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Bandwidth-tuning from insulating Mott quantum spin liquid to Fermi liquid via chemical substitution in $\kappa$-[(BEDT-TTF)$_{1-x}$(BEDT-STF)$_x$]$_2$Cu$_2$(CN)$_3$

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arxiv 1911.06766 v1 pith:XA4SXWRL submitted 2019-11-15 cond-mat.str-el

classification cond-mat.str-el
keywords insulatingliquidmotttransitionbedt-ttfchemicaldielectricelectronic
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The electronic properties of molecular conductors can be readily varied via physical or chemical pressure as it increases the bandwidth W; this enables crossing the Mott insulator-to-metal phase transition by reducing electronic correlations U/W. Here we introduce an alternative path by increasing the molecular orbitals when partially replacing sulfur by selenium in the constituting bis-(ethylenedithio)-tetrathiafulvalene (BEDT-TTF) molecules of the title compound. We characterize the tuning of the insulating quantum spin liquid state via a Mott transition to the metallic Fermi-liquid state by transport, dielectric, and optical measurements. At this first-order phase transition, metallic regions coexist in the insulating matrix leading to pronounced percolative effects most obvious in a strong enhancement of the dielectric constant at low temperatures.

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  1. Universal relation between residual resistivity and A coefficient in correlated metals

    cond-mat.str-el 2025-08 conditional novelty 7.0 of 10

    Residual resistivity in correlated metals contains a term proportional to the Fermi-liquid A coefficient: rho0 = rho00 + (3/4 pi^2) A sigma_mu^2, where sigma_mu is the variance of local chemical-potential fluctuations.

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