Pith Number

pith:72AKGPSA

pith:2026:72AKGPSAIPU2ZVKVUBQD4R5BWL

not attested not anchored not stored refs resolved

Stable Charge Collection and Sub-45 ps Time Resolution in a 4H-SiC PIN Detector Irradiated With Low Fluence 16.5 MeV/u Ta Ions

Congcong Wang, Jingxuan He, Xin Shi, Xiyuan Zhang, Yi Zhan, Zhenyu Jiang

A 4H-SiC PIN detector maintains 99.24 percent charge collection efficiency and 45 ps time resolution after low-fluence Ta ion irradiation.

arxiv:2605.13216 v1 · 2026-05-13 · physics.ins-det

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\usepackage{pith}
\pithnumber{72AKGPSAIPU2ZVKVUBQD4R5BWL}

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3 Author claim open · sign in to claim

4 Citations open

5 Replications open

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The bundle contains the canonical record plus signed events. A mirror can host it anywhere and recompute the same current state with the deterministic merge algorithm.

Claims

C1strongest claim

The 4H-SiC PIN detector exhibits a charge collection efficiency (CCE) of 99.24% under Ta Heavy Ion Irradiation. The time resolutions of the detector before and after irradiation are 40 ps and 45 ps, respectively. Experimental results indicate that the CCE and time resolution performance exhibit good stability before and after irradiation.

C2weakest assumption

That the chosen low fluence of 16.5 MeV/u Ta ions and the beta-particle test conditions are representative of the damage mechanisms and performance requirements in actual high-energy physics or space applications.

C3one line summary

4H-SiC PIN detector maintains 99.24% charge collection efficiency and 45 ps time resolution after low-fluence Ta ion irradiation with minimal change in electrical properties.

References

18 extracted · 18 resolved · 0 Pith anchors

[1] Nondestructive spectroscopic investigation of n-type 4h-sic defects irradiated with low fluence 16.5 mev/u ta ions 2024

[2] Investigation on high-temperature and high-field reliability of nmos devices fabricated using 28 nm technology after heavy-ion irradiation 2025

[3] A review of ultra-wide-bandgap semiconductor radiation detector for high-energy particles and photons 2025 · doi:10.1088/1361-6528/adbf2

[4] Displacement damage in silicon detectors for high energy physics 2018

[5] A summary review of displacement damage from high energy radiation in silicon semiconductors and semiconductor devices 1992

Formal links

1 machine-checked theorem link

Receipt and verification

First computed	2026-05-18T03:08:48.471564Z
Builder	pith-number-builder-2026-05-17-v1
Signature	Pith Ed25519 (`pith-v1-2026-05`) · public key
Schema	pith-number/v1.0

Canonical hash

fe80a33e4043e9acd555a0603e47a1b2fca816d7acf2046cddc45caeeb10bcae

Aliases

arxiv: 2605.13216 · arxiv_version: 2605.13216v1 · doi: 10.48550/arxiv.2605.13216 · pith_short_12: 72AKGPSAIPU2 · pith_short_16: 72AKGPSAIPU2ZVKV · pith_short_8: 72AKGPSA

Agent API

Resolver JSON Graph JSON Events JSON Schema Signing key

Verify this Pith Number yourself

curl -sH 'Accept: application/ld+json' https://pith.science/pith/72AKGPSAIPU2ZVKVUBQD4R5BWL \
  | jq -c '.canonical_record' \
  | python3 -c "import sys,json,hashlib; b=json.dumps(json.loads(sys.stdin.read()), sort_keys=True, separators=(',',':'), ensure_ascii=False).encode(); print(hashlib.sha256(b).hexdigest())"
# expect: fe80a33e4043e9acd555a0603e47a1b2fca816d7acf2046cddc45caeeb10bcae

Canonical record JSON

{
  "metadata": {
    "abstract_canon_sha256": "2a43502ba6bc669e2dd4f9fbcbeac25adb81c1a85ab9366d0febd052dc10a6be",
    "cross_cats_sorted": [],
    "license": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
    "primary_cat": "physics.ins-det",
    "submitted_at": "2026-05-13T09:09:49Z",
    "title_canon_sha256": "cd6a1b74fac304a7f0f672094ec957f706279be4e256b8312841592ee59d86a6"
  },
  "schema_version": "1.0",
  "source": {
    "id": "2605.13216",
    "kind": "arxiv",
    "version": 1
  }
}