pith:GDQXUV7I
Integrated ytterbium gain for visible-near-infrared photonics
Ytterbium ions integrated into aluminum oxide deliver high-power near-infrared amplification and visible supercontinuum on chip.
arxiv:2605.13828 v1 · 2026-05-13 · physics.optics
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Claims
Here, we demonstrate ytterbium-based optical gain integrated into an aluminum oxide photonic platform, achieving both single-mode lasing and optical amplification in the near-infrared regime. This platform delivers optical amplification with output powers exceeding 0.5 W, an optical-to-optical conversion efficiency above 70%, and a noise figure of 3.3 dB, approaching the quantum limit for phase-insensitive amplification. Furthermore, we achieve femtosecond pulse amplification to a record peak power of 14 kW, enabling supercontinuum generation with visible dispersive waves extending from 780 to 476 nm in conjunction with nonlinear photonic devices.
Ytterbium ions can be incorporated into the aluminum oxide matrix at sufficient concentration and uniformity to deliver the stated gain, efficiency, and low noise without quenching, scattering losses, or fabrication-induced defects that would prevent heterogeneous integration into standard photonic circuits.
Ytterbium-doped aluminum oxide photonic platform achieves single-mode lasing, >0.5 W amplification at >70% efficiency and 3.3 dB noise figure, 14 kW peak-power femtosecond pulses, and visible supercontinuum generation from 780 to 476 nm.
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| First computed | 2026-05-18T02:44:15.132004Z |
|---|---|
| Builder | pith-number-builder-2026-05-17-v1 |
| Signature | Pith Ed25519
(pith-v1-2026-05) · public key |
| Schema | pith-number/v1.0 |
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30e17a57e8d44b202c846ad15844fb8a5d0b1e2c82e0b4161ffa488204e596d1
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