pith:UPVQXMSV
Magnetization-dependent and stacking-tunable Edelstein effect in two-dimensional magnet 2H-VTe2
Current-induced spin accumulation in 2H-VTe2 depends on magnetization direction and switches with bilayer stacking.
arxiv:2605.13763 v1 · 2026-05-13 · cond-mat.mes-hall · cond-mat.mtrl-sci
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Claims
we demonstrate that the Edelstein effect can intrinsically arise in the 2D in-plane ferromagnetic semiconductor 2H-VTe2, with its behavior strongly dependent on the magnetization orientation. For monolayer 2H-VTe2 with D3h crystal symmetry, under an applied current along the +x direction, only the time-reversal-even z component and the time-reversal-odd y(x) component of the spin accumulation are allowed when the magnetization is aligned along +x (+y). For ferromagnetic bilayer 2H-VTe2 in AB or BA stacking, where the crystal symmetry is reduced to C3v, additional spin components emerge with the presence of in-plane magnetization.
The first-principles calculations and symmetry analysis correctly identify all allowed spin accumulation components, assuming that the chosen density-functional approximations accurately capture the electronic structure, spin-orbit coupling, and magnetic order of 2H-VTe2 without significant errors from exchange-correlation functionals or neglected many-body effects.
Edelstein effect is intrinsic in 2H-VTe2 with magnetization-dependent spin components that become stacking-tunable in bilayers via interlayer sliding.
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| First computed | 2026-05-18T02:44:16.139039Z |
|---|---|
| Builder | pith-number-builder-2026-05-17-v1 |
| Signature | Pith Ed25519
(pith-v1-2026-05) · public key |
| Schema | pith-number/v1.0 |
Canonical hash
a3eb0bb255940a58e1d227b035f350efdeb5e1dc7619b505338b19129d9cbd7a
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curl -sH 'Accept: application/ld+json' https://pith.science/pith/UPVQXMSVSQFFRYOSE6YDL42Q57 \
| jq -c '.canonical_record' \
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Canonical record JSON
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"submitted_at": "2026-05-13T16:42:22Z",
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