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A Compact Model for Scalable MTJ Simulation

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arxiv 2106.04976 v1 pith:6A67PROB submitted 2021-06-09 cs.ET

Fernando García-Redondo , Pranay Prabhat , Mudit Bhargava , Cyrille Dray This is my paper · ORCID
classification cs.ET
keywords magneticmodelsimulationbehaviorcompactframeworkstochasticaccounting
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This paper presents a physics-based modeling framework for the analysis and transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the stochastic behavior of MTJs and to generate Verilog-A compact models for their simulation in large VLSI designs, addressing the need for an industry-ready model accounting for real-world reliability and scalability requirements. Device dynamics are described by the Landau-Lifshitz-Gilbert-Slonczewsky (s-LLGS ) stochastic magnetization considering Voltage-Controlled Magnetic Anisotropy (VCMA) and the non-negligible statistical effects caused by thermal noise. Model behavior is validated against the OOMMF magnetic simulator and its performance is characterized on a 1-Mb 28 nm Magnetoresistive-RAM (MRAM) memory product.

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Cited by 2 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. Magnetic Tunnel Junctions for Timekeeping in Intermittent Computing Systems

    cs.AR 2026-07 conditional novelty 7.0 of 10

    FLINT estimates power-off duration from the stochastic decay of MTJ arrays, reaching 15-minute range at ≤10% error with ~1 µJ per readout, constant across ranges.

  2. From sLLG to Fokker-Planck: Accurate WER Modeling for Non-Axisymmetric MRAM Devices

    cs.ET 2026-07 conditional novelty 6.0 of 10

    For non-axisymmetric STT/SOT MRAM devices, a 2D Fokker-Planck solver using central differencing matches 10^6-trajectory stochastic LLG write-error rates, while monotone schemes bias switching early.

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