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Siddharth Rajan

Identifiers

  • name variant Siddharth Rajan 0.60 · backfill

Papers (39)

  1. AlN Gate Interlayer for UWBG AlGaN Transistors with Breakdown Field >6.9 MV/cm and PFOM >1.8 GW/cm2 physics.app-ph · 2026 · author #8
  2. High Breakdown Field Multi-kV UWBG AlGaN Transistors physics.app-ph · 2026 · author #9
  3. Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit cond-mat.mtrl-sci · 2018 · author #8
  4. High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures cond-mat.mtrl-sci · 2018 · author #14
  5. MBE grown Self-Powered \b{eta}-Ga2O3 MSM Deep-UV Photodetector physics.app-ph · 2018 · author #6
  6. Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor cond-mat.mes-hall · 2017 · author #11
  7. Reflective Metal/Semiconductor Tunnel Junctions for Hole Injection in AlGaN UV LEDs physics.app-ph · 2017 · author #9
  8. Tunnel-injected sub-260 nm ultraviolet light emitting diodes cond-mat.mtrl-sci · 2017 · author #8
  9. Delta-doped Beta- Gallium Oxide Field Effect Transistor cond-mat.mes-hall · 2017 · author #5
  10. High Responsivity in Molecular Beam Epitaxy (MBE) grown \b{eta}-Ga2O3 Metal Semiconductor Metal (MSM) Solar Blind Deep-UV Photodetector cond-mat.mes-hall · 2017 · author #6
  11. Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates cond-mat.mtrl-sci · 2016 · author #9
  12. Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions cond-mat.mtrl-sci · 2016 · author #7
  13. AlGaN Channel Field Effect Transistors with Graded Heterostructure Ohmic Contacts cond-mat.mes-hall · 2016 · author #5
  14. Design of P-Type Cladding Layers for Tunnel-Injected UVA Light Emitting Diodes cond-mat.mes-hall · 2016 · author #7
  15. High Current Density 2D/3D Esaki Tunnel Diodes physics.ins-det · 2016 · author #9
  16. Phonon lasing as a likely mechanism for density-dependent velocity saturation in GaN transistors cond-mat.mes-hall · 2016 · author #3
  17. Low-resistance GaN tunnel homojunctions with 150 kA/cm^2 current and repeatable negative differential resistance cond-mat.mtrl-sci · 2016 · author #6
  18. Enhanced Light Extraction in Tunnel Junction Enabled Top Emitting UV LEDs cond-mat.mtrl-sci · 2015 · author #7
  19. Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer physics.ins-det · 2015 · author #5
  20. Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs cond-mat.mtrl-sci · 2015 · author #10
  21. Layer-Transferred MoS2/GaN PN Diodes cond-mat.mtrl-sci · 2015 · author #9
  22. Interband Tunneling for Hole Injection in III-Nitride Ultra-violet Emitters cond-mat.mtrl-sci · 2015 · author #9
  23. Modeling of High Composition AlGaN Channel HEMTs with Large Threshold Voltage cond-mat.mtrl-sci · 2014 · author #5
  24. Epitaxial Growth of Large Area Single-Crystalline Few-Layer MoS2 with Room Temperature Mobility of 192 cm2V-1s-1 cond-mat.mtrl-sci · 2014 · author #6
  25. InGaN/GaN Tunnel Junctions For Hole Injection in GaN Light Emitting Diodes cond-mat.mtrl-sci · 2014 · author #3
  26. Growth and Electrical Characterization of 2D Layered MoS2/SiC Heterojunctions cond-mat.mtrl-sci · 2014 · author #6
  27. Low frequency noise in chemical vapor deposited MoS2 cond-mat.mes-hall · 2013 · author #7
  28. Large Area Single Crystal (0001) Oriented MoS2 Thin Films cond-mat.mtrl-sci · 2013 · author #9
  29. Ohmic Contact Formation Between Metal and AlGaN/GaN Heterostructure via Graphene Insertion cond-mat.mtrl-sci · 2013 · author #6
  30. Low Resistance GaN/InGaN/GaN Tunnel Junctions cond-mat.mtrl-sci · 2012 · author #4
  31. GdN Nanoisland-Based GaN Tunnel Junctions cond-mat.mtrl-sci · 2012 · author #6
  32. Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces cond-mat.mtrl-sci · 2011 · author #8
  33. A heterojunction modulation-doped Mott transistor cond-mat.mtrl-sci · 2011 · author #2
  34. Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride cond-mat.mes-hall · 2011 · author #6
  35. Demonstration of Forward Inter-band Tunneling in GaN by Polarization Engineering cond-mat.mtrl-sci · 2011 · author #3
  36. First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures cond-mat.mtrl-sci · 2011 · author #3
  37. Lateral Confinement of Electrons in Vicinal N-polar AlGaN/GaN Heterostructure cond-mat.mtrl-sci · 2010 · author #6
  38. Polarization-engineered GaN/InGaN/GaN tunnel diodes cond-mat.mtrl-sci · 2010 · author #6
  39. Effect of optical phonon scattering on the performance of GaN transistors cond-mat.mtrl-sci · 2010 · author #2

Mentions

  • 1511.04438 #5 · backfill · confidence 0.70 Siddharth Rajan
  • 1508.07050 #10 · backfill · confidence 0.70 Siddharth Rajan
  • 1505.05196 #9 · backfill · confidence 0.70 Siddharth Rajan
  • 2606.02954 #8 · arxiv_oai · confidence 0.70 Siddharth Rajan
  • 1502.02080 #9 · backfill · confidence 0.70 Siddharth Rajan
  • 1411.1447 #5 · backfill · confidence 0.70 Siddharth Rajan
  • 1405.2479 #6 · backfill · confidence 0.70 Siddharth Rajan
  • 1403.3932 #3 · backfill · confidence 0.70 Siddharth Rajan
  • 1402.1816 #6 · backfill · confidence 0.70 Siddharth Rajan
  • 1310.6484 #7 · backfill · confidence 0.70 Siddharth Rajan
  • 1302.3177 #9 · backfill · confidence 0.70 Siddharth Rajan
  • 1301.1952 #6 · backfill · confidence 0.70 Siddharth Rajan
  • 1211.4905 #4 · backfill · confidence 0.70 Siddharth Rajan
  • 1206.3810 #6 · backfill · confidence 0.70 Siddharth Rajan
  • 1111.4684 #8 · backfill · confidence 0.70 Siddharth Rajan
  • 1109.5299 #2 · backfill · confidence 0.70 Siddharth Rajan
  • 1109.2566 #6 · backfill · confidence 0.70 Siddharth Rajan
  • 1108.4075 #3 · backfill · confidence 0.70 Siddharth Rajan
  • 1104.4149 #3 · backfill · confidence 0.70 Siddharth Rajan
  • 1009.2537 #6 · backfill · confidence 0.70 Siddharth Rajan
  • 1008.4124 #6 · backfill · confidence 0.70 Siddharth Rajan
  • 1008.1154 #2 · backfill · confidence 0.70 Siddharth Rajan

Frequent Coauthors