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Vladimir Protasenko

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Papers (12)

  1. High efficiency deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures cond-mat.mes-hall · 2017 · author #2
  2. MBE-grown 232-270 nm Deep-UV LEDs using Monolayer thin Binary GaN/AlN quantum heterostructures cond-mat.mtrl-sci · 2016 · author #4
  3. Repeatable Room Temperature Negative Differential Conductance in GaN/AlN Resonant Tunneling Diodes cond-mat.mes-hall · 2016 · author #4
  4. Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth cond-mat.mtrl-sci · 2015 · author #9
  5. Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment cond-mat.mtrl-sci · 2015 · author #8
  6. Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes cond-mat.mtrl-sci · 2015 · author #3
  7. Self-Assembled Ge QDs Formed by High Temperature Annealing on GaAs and AlxGa1-xAs (001) cond-mat.mtrl-sci · 2014 · author #5
  8. Ge Quantum Dots Encapsulated by AlAs Grown by Molecular Beam Epitaxy on GaAs Without Extended Defects cond-mat.mtrl-sci · 2013 · author #3
  9. High-Voltage Field Effect Transistors with Wide-Bandgap {\beta}-Ga2O3 Nanomembranes cond-mat.mes-hall · 2013 · author #4
  10. Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior cond-mat.mes-hall · 2012 · author #4
  11. Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design cond-mat.mtrl-sci · 2010 · author #10
  12. Power Law Blinking Quantum Dots: Stochastic and Physical Models cond-mat.stat-mech · 2005 · author #2

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