Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design

Debdeep Jena , John Simon , Albert (Kejia) Wang , Yu Cao , Kevin Goodman , Jai Verma , Satyaki Ganguly , Guowang Li

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Kamal Karda Vladimir Protasenko Chuanxin Lian Thomas Kosel Patrick Fay Huili Xing

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classification ❄️ cond-mat.mtrl-sci

keywords iii-vnitrideopportunitiespolarizationabruptbinarycomposeddesign

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The role of spontaneous and piezoelectric polarization in III-V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary nitrides are outlined.

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Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design

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