Nanosecond pulsed illumination at 532-1064 nm on the Si-SiO2 interface in atmospheric SeBDs enhances plasma emission and reduced electric field via wavelength-dependent photogeneration of carriers in the depletion region, analogous to MOS photodetector behavior.
Ultrafast dynamics of electrons and phonons: from the two-temperature model to the time-dependent boltzmann equation.Advances in Physics: X, 7(1):2095925, 2022
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
physics.plasm-ph 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Photonic Interactions with Semiconducting Barrier Discharges
Nanosecond pulsed illumination at 532-1064 nm on the Si-SiO2 interface in atmospheric SeBDs enhances plasma emission and reduced electric field via wavelength-dependent photogeneration of carriers in the depletion region, analogous to MOS photodetector behavior.