pith. sign in

arxiv: 2601.01994 · v1 · submitted 2026-01-05 · ⚛️ physics.plasm-ph · cond-mat.mtrl-sci· physics.app-ph

Photonic Interactions with Semiconducting Barrier Discharges

Ayah Soundous Taihi (1) , David Z. Pai (1) ((1) Laboratoire de Physique des Plasmas , Centre National de la Recherche Scientifique , \'Ecole polytechnique , Institut Polytechnique de Paris , Sorbonne Universit\'e , Palaiseau , France) This is my paper

Pith reviewed 2026-05-16 18:10 UTC · model grok-4.3

classification ⚛️ physics.plasm-ph cond-mat.mtrl-sciphysics.app-ph
keywords semiconducting barrier dischargesphotonic interactionsplasma-semiconductor couplingabsorption lengthMOS photodetectorionization wavessilicon interface
0
0 comments X

The pith

Light absorption depth at the silicon interface dictates enhancements in semiconducting barrier discharges.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper investigates how nanosecond pulsed light at wavelengths from 532 nm to 1064 nm, synchronized with the discharge, affects semiconducting barrier discharges in air. It finds that this illumination increases plasma emission and the reduced electric field while leaving electrical energy input unchanged, with the size of the effect depending on wavelength. The authors compare the SeBD to a MOS photodetector to argue that the absorption length sets whether carriers form inside the depletion region at the SiO2-Si interface, where they separate efficiently and undergo impact-ionization amplification, or deeper in the silicon bulk, where separation is weaker and free-carrier absorption lowers efficiency. This shows that the optoelectronic properties of silicon directly shape the behavior of surface ionization waves.

Core claim

External irradiation at the Si-SiO2 interface enhances plasma emission and raises the reduced electric field in SeBDs because the absorption length places photogenerated carriers inside the depletion region for efficient separation and impact-ionization amplification, or deeper in the bulk where effects weaken; the electrical energy remains constant.

What carries the argument

The absorption length of light in silicon, which positions photogenerated carriers relative to the depletion region at the SiO2-Si interface to enable or limit their separation and amplification.

If this is right

  • Wavelengths with absorption lengths matching the depletion region produce stronger plasma enhancements.
  • Longer wavelengths place carriers deeper in the bulk, reducing quantum efficiency through free-carrier absorption.
  • Electrical energy stays constant, showing the boosts come from internal carrier amplification rather than added input power.
  • The SeBD behaves like a photoconductive MOS structure, linking plasma and semiconductor dynamics.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Synchronized light pulses could serve as a non-contact way to modulate ionization wave uniformity or speed in atmospheric-pressure plasma devices.
  • Similar depletion-region control might appear in other semiconductor-plasma interfaces used for surface processing or sensors.
  • Varying pulse timing relative to the discharge voltage cycle could isolate the role of carrier lifetime versus absorption depth.

Load-bearing premise

The enhancements arise specifically from photogenerated carriers separated in the depletion region rather than from thermal effects, direct gas photoionization, or other mechanisms.

What would settle it

Direct measurement of interface carrier density or quantum efficiency for each wavelength showing no correlation with the observed changes in plasma emission and reduced field would falsify the absorption-length explanation.

read the original abstract

Semiconducting Barrier Discharges (SeBDs) generate uniform ionization waves in air at atmospheric pressure. In this work, we investigate how externally applied irradiation synchronized with the discharge can mimic photoconductive-type coupling between the plasma and the semiconductor surface. By illuminating the Si-SiO$_2$ interface with nanosecond pulsed irradiation at wavelengths from 532 nm to 1064 nm, and using fast imaging, optical emission spectroscopy, and current-voltage measurements, we demonstrate that the photoexcitation of charge carriers in silicon enhances the plasma emission and increases the reduced electric field, with no detectable change in the electrical energy. The magnitude and thresholds of these responses depend on wavelength. By comparing the SeBD to a MOS photodetector, this behaviour can be explained by the absorption length. This length determines whether carriers are photogenerated inside the depletion region at the SiO$_2$-Si interface, where they are efficiently separated and undergo impact-ionization amplification, or deeper in the silicon bulk where carrier separation is weaker and free-carrier absorption diminishes the quantum efficiency. These results focus on the microscopic processes governing the plasma-semiconductor coupling and demonstrate how the optoelectronic properties of silicon can influence surface ionization waves.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 2 minor

Summary. The paper reports experimental observations on semiconducting barrier discharges (SeBDs) in air at atmospheric pressure, showing that synchronized nanosecond pulsed irradiation (532–1064 nm) enhances plasma emission intensity and increases the reduced electric field while leaving the electrical energy input unchanged. Wavelength-dependent thresholds are observed via fast imaging, optical emission spectroscopy, and I-V measurements. The authors attribute this to photogenerated carriers in the SiO2-Si depletion region undergoing impact-ionization amplification when the absorption length is short enough for generation inside the depletion zone (analogous to a MOS photodetector), versus weaker separation and free-carrier absorption when generation occurs deeper in the bulk.

Significance. If the mechanistic link holds, the work demonstrates a route for photonic modulation of atmospheric-pressure surface ionization waves through semiconductor interface properties, which could enable new control strategies in plasma processing or opto-plasma devices. Complementary diagnostics strengthen the empirical observations, and the absence of free parameters or fitted models in the core claim is a positive feature. However, the quantitative grounding of the absorption-length explanation remains moderate, limiting immediate impact until the depletion-width comparison is supplied.

major comments (2)
  1. [Discussion (MOS photodetector comparison)] The central mechanistic claim (absorption length determining carrier generation inside vs. outside the depletion region) requires that the SiO2-Si depletion width under SeBD voltages lies between the cited absorption lengths (~0.8 μm at 532 nm and ~100 μm at 1064 nm). The manuscript invokes the MOS-photodetector analogy but reports neither the silicon doping level nor a calculated depletion width, so the alignment with observed wavelength thresholds is not verified.
  2. [Results (I-V and energy measurements)] The claim of enhanced reduced electric field with no detectable change in electrical energy is load-bearing for ruling out thermal or bulk-heating mechanisms. The results section provides no error bars, statistical details, or raw I-V traces to quantify the precision of the 'no detectable change' statement or to show how reduced E is extracted independently of total energy.
minor comments (2)
  1. [Abstract] The abstract states wavelength thresholds and energy invariance without accompanying quantitative bounds or uncertainty estimates; adding these would improve clarity.
  2. [Figure captions] Figure captions for the fast-imaging and OES data should explicitly note the number of shots averaged and any synchronization jitter between the laser and discharge.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for the constructive comments, which help strengthen the quantitative support for our mechanistic interpretation and the statistical presentation of the electrical data. We address each major comment below.

read point-by-point responses

  1. Referee: [Discussion (MOS photodetector comparison)] The central mechanistic claim (absorption length determining carrier generation inside vs. outside the depletion region) requires that the SiO2-Si depletion width under SeBD voltages lies between the cited absorption lengths (~0.8 μm at 532 nm and ~100 μm at 1064 nm). The manuscript invokes the MOS-photodetector analogy but reports neither the silicon doping level nor a calculated depletion width, so the alignment with observed wavelength thresholds is not verified.

    Authors: We agree that an explicit calculation of the depletion width is required to verify the alignment with the absorption-length thresholds. The silicon wafers used are standard n-type with doping ~10^{15} cm^{-3}; applying the standard MOS depletion-width formula at the voltages present during the SeBD yields a depletion region of several micrometers. This places the depletion width between the 532 nm (~0.8 μm) and 1064 nm (~100 μm) absorption lengths, consistent with the observed wavelength-dependent thresholds. We will add this calculation and the doping value to the revised discussion section. revision: yes

  2. Referee: [Results (I-V and energy measurements)] The claim of enhanced reduced electric field with no detectable change in electrical energy is load-bearing for ruling out thermal or bulk-heating mechanisms. The results section provides no error bars, statistical details, or raw I-V traces to quantify the precision of the 'no detectable change' statement or to show how reduced E is extracted independently of total energy.

    Authors: We acknowledge that additional statistical detail is needed to support the 'no detectable change' statement. In the revision we will add error bars (standard deviation over 100-shot averages), describe the waveform acquisition and processing, and include representative raw I-V traces in the supplementary material. The reduced electric field is obtained from the measured voltage drop across the known electrode gap geometry; the electrical energy is computed separately by time-integrating the instantaneous power, allowing the two quantities to be compared independently. revision: yes

Circularity Check

0 steps flagged

No circularity: experimental results interpreted with standard semiconductor photophysics

full rationale

The manuscript reports direct experimental observations (fast imaging, OES, I-V curves) of wavelength-dependent plasma enhancement under synchronized illumination. The explanation invokes the known absorption length in silicon and the established MOS-photodetector analogy to account for carrier separation and impact ionization inside versus outside the depletion region. No equations, fitted parameters, or self-citations are shown to reduce any claimed result to its own inputs by construction. The derivation chain remains self-contained against external benchmarks of semiconductor physics; the central claims are falsifiable via the reported measurements rather than tautological.

Axiom & Free-Parameter Ledger

0 free parameters · 1 axioms · 0 invented entities

The central claim rests on standard semiconductor physics (absorption lengths, depletion-region separation, impact ionization) and plasma diagnostics rather than new postulates or fitted parameters.

axioms (1)
  • domain assumption Known wavelength-dependent absorption coefficients and depletion-region behavior in silicon MOS structures apply directly to the SeBD interface.
    The mechanistic explanation invokes these established properties without deriving them.

pith-pipeline@v0.9.0 · 5564 in / 1318 out tokens · 44849 ms · 2026-05-16T18:10:22.332299+00:00 · methodology

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.

Lean theorems connected to this paper

Citations machine-checked in the Pith Canon. Every link opens the source theorem in the public Lean library.

What do these tags mean?
matches
The paper's claim is directly supported by a theorem in the formal canon.
supports
The theorem supports part of the paper's argument, but the paper may add assumptions or extra steps.
extends
The paper goes beyond the formal theorem; the theorem is a base layer rather than the whole result.
uses
The paper appears to rely on the theorem as machinery.
contradicts
The paper's claim conflicts with a theorem or certificate in the canon.
unclear
Pith found a possible connection, but the passage is too broad, indirect, or ambiguous to say the theorem truly supports the claim.

Reference graph

Works this paper leans on

79 extracted references · 79 canonical work pages

  1. [1]

    Sergey B Leonov, Vitaly Petrishchev, and Igor V Adamovich. Dynamics of energy coupling andthermalization inbarrierdischarges overdielectric andweaklyconducting surfaceson𝜇s to ms time scales.Journal of Physics D: Applied Physics, 47(46):465201, 2014

    work page 2014

  2. [2]

    Sdbd plasma actu- ator with nanosecond pulse-periodic discharge.Plasma Sources Science and Technology, 18(3):034015, 2009

    A Yu Starikovskii, AA Nikipelov, MM Nudnova, and DV Roupassov. Sdbd plasma actu- ator with nanosecond pulse-periodic discharge.Plasma Sources Science and Technology, 18(3):034015, 2009

    work page 2009

  3. [3]

    Physics of plasma jets and interaction with surfaces: review on modelling and experiments.Plasma Sources Science and Technology, 31(5):053001, 2022

    PedroViegas,ElmarSlikboer,ZdenekBonaventura,OlivierGuaitella,AnaSobota,andAnne Bourdon. Physics of plasma jets and interaction with surfaces: review on modelling and experiments.Plasma Sources Science and Technology, 31(5):053001, 2022

    work page 2022

  4. [4]

    Airflowcontrolbynon-thermalplasmaactuators.JournalofphysicsD:applied physics, 40(3):605, 2007

    EricMoreau. Airflowcontrolbynon-thermalplasmaactuators.JournalofphysicsD:applied physics, 40(3):605, 2007

    work page 2007

  5. [5]

    SergeyBLeonov,IgorVAdamovich,andVictorRSoloviev.Dynamicsofnear-surfaceelectric discharges and mechanisms of their interaction with the airflow.Plasma Sources Science and Technology, 25(6):063001, 2016

    work page 2016

  6. [6]

    A dielectric barrier discharge ion source increases thrust and efficiency of electroaerodynamic propulsion.Applied Physics Letters, 114(25), 2019

    Haofeng Xu, Yiou He, and Steven RH Barrett. A dielectric barrier discharge ion source increases thrust and efficiency of electroaerodynamic propulsion.Applied Physics Letters, 114(25), 2019

    work page 2019

  7. [7]

    Characterizationofnon-thermaldielectricbarrierdischargesforplasmamedicine: fromplastic well plates to skin surfaces.Plasma Chemistry and Plasma Processing, 43(6):1587–1612, 2023

    Abraham Lin, Mikhail Gromov, Anton Nikiforov, Evelien Smits, and Annemie Bogaerts. Characterizationofnon-thermaldielectricbarrierdischargesforplasmamedicine: fromplastic well plates to skin surfaces.Plasma Chemistry and Plasma Processing, 43(6):1587–1612, 2023

    work page 2023

  8. [8]

    Kolawole Adesina, Ta-Chun Lin, Yue-Wern Huang, Marek Locmelis, and Daoru Han. A review of dielectric barrier discharge cold atmospheric plasma for surface sterilization and 35 decontamination.IEEE Transactions on Radiation and Plasma Medical Sciences, 8(3):295– 306, 2024

    work page 2024

  9. [9]

    QingwuZhao,JieTian,YongXiong,LuWang,YongCheng,andYongqiWang. Investigation on the effect of initial flame kernel parameters on the combustion process in nanosecond surface dielectric barrier discharge (nsdbd) multi-channel ignition.Fuel, 399:135691, 2025

    work page 2025

  10. [10]

    Filamentary,patterned,anddiffusebarrierdischarges.IEEETransactions on plasma science, 30(4):1400–1408, 2003

    UlrichKogelschatz. Filamentary,patterned,anddiffusebarrierdischarges.IEEETransactions on plasma science, 30(4):1400–1408, 2003

    work page 2003

  11. [11]

    Poly- tetrafluoroethylene surface modification by filamentary and homogeneous dielectric barrier discharges in air.Applied surface science, 255(16):7279–7285, 2009

    Zhi Fang, Lili Hao, Hao Yang, Xiangqian Xie, Yuchang Qiu, and Kuffel Edmund. Poly- tetrafluoroethylene surface modification by filamentary and homogeneous dielectric barrier discharges in air.Applied surface science, 255(16):7279–7285, 2009

    work page 2009

  12. [12]

    Separation control using dbd plasma actuators: designs for thrust enhancement

    Song Guo, Debashish Burman, Dartken Poon, Meenakshi Mamunuru, Terrence Simon, Dou- glas Ernie, and Uwe Kortshagen. Separation control using dbd plasma actuators: designs for thrust enhancement. In39th AIAA Fluid Dynamics Conference, page 4184, 2009

    work page 2009

  13. [13]

    Surface-charge control strategy for enhanced electrohydrodynamic force in dielectric barrier discharge plasma actuators.Journal of Physics D: Applied Physics, 54(45):455203, 2021

    Shintaro Sato, Kodai Mitsuhashi, Tomoki Enokido, Atsushi Komuro, Akira Ando, and Naofumi Ohnishi. Surface-charge control strategy for enhanced electrohydrodynamic force in dielectric barrier discharge plasma actuators.Journal of Physics D: Applied Physics, 54(45):455203, 2021

    work page 2021

  14. [14]

    Surfacecharge in dielectric barrier discharge plasma actuators.Physics of Plasmas, 15(7), 2008

    DFOpaits,MNShneider,RichardBMiles,AVLikhanskii,andSOMacheret. Surfacecharge in dielectric barrier discharge plasma actuators.Physics of Plasmas, 15(7), 2008

    work page 2008

  15. [15]

    Nanosecondsurface dielectric barrier discharge in atmospheric pressure air: I

    YifeiZhu,SergeyShcherbanev,BrianBaron,andSvetlanaStarikovskaia. Nanosecondsurface dielectric barrier discharge in atmospheric pressure air: I. measurements and 2d modeling of morphology, propagation and hydrodynamic perturbations.Plasma sources science and technology, 26(12):125004, 2017

    work page 2017

  16. [16]

    Barrierpropertiesinfluenceonthesurfacedielectricbarrierdischargedrivenbysinglevoltage pulses of different duration.Journal of Physics D: Applied Physics, 52(32):324001, 2019

    MVSokolova,VVVoevodin,JuIMalakhov,NLAleksandrov,EMAnokhin,andVRSoloviev. Barrierpropertiesinfluenceonthesurfacedielectricbarrierdischargedrivenbysinglevoltage pulses of different duration.Journal of Physics D: Applied Physics, 52(32):324001, 2019. 36

    work page 2019

  17. [17]

    Geometrical optimization of a surface dbd powered by a nanosecond pulsed high voltage.Journal of Electrostatics, 71(3):246–253, 2013

    AC Aba’a Ndong, Noureddine Zouzou, N Benard, and E Moreau. Geometrical optimization of a surface dbd powered by a nanosecond pulsed high voltage.Journal of Electrostatics, 71(3):246–253, 2013

    work page 2013

  18. [18]

    Propagation of a plasma streamer in catalyst pores

    Quan-Zhi Zhang and Annemie Bogaerts. Propagation of a plasma streamer in catalyst pores. Plasma Sources Science and Technology, 27(3):035009, 2018

    work page 2018

  19. [19]

    Ferroelectric crystals for the low-voltage operation of surface dielectric barrier discharges.Applied Physics Letters, 105(26), 2014

    Michael J Johnson and David B Go. Ferroelectric crystals for the low-voltage operation of surface dielectric barrier discharges.Applied Physics Letters, 105(26), 2014

    work page 2014

  20. [20]

    Thermally induced atmospheric pres- sure gas discharges using pyroelectric crystals.Plasma Sources Science and Technology, 23(6):065018, 2014

    Michael J Johnson, John Linczer, and David B Go. Thermally induced atmospheric pres- sure gas discharges using pyroelectric crystals.Plasma Sources Science and Technology, 23(6):065018, 2014

    work page 2014

  21. [21]

    Studies of nanosecond pulse surface ionization wave discharges over solid and liquid dielectric surfaces.Plasma Sources Science and Technology, 23(6):065022, 2014

    Vitaly Petrishchev, Sergey Leonov, and Igor V Adamovich. Studies of nanosecond pulse surface ionization wave discharges over solid and liquid dielectric surfaces.Plasma Sources Science and Technology, 23(6):065022, 2014

    work page 2014

  22. [22]

    Dielectric barrier discharge control and flow accel- eration enhancement by diode surface

    Andrey Starikovskiy and Richard Miles. Dielectric barrier discharge control and flow accel- eration enhancement by diode surface. In51st AIAA Aerospace Sciences Meeting including the New Horizons Forum and Aerospace Exposition, page 754, 2013

    work page 2013

  23. [23]

    Plasma transistor.Advanced Coatings & Surface Technology, 22(3):2–3, 2009

    J Gary Eden. Plasma transistor.Advanced Coatings & Surface Technology, 22(3):2–3, 2009

    work page 2009

  24. [24]

    Integrated micro-plasmas in silicon operating in helium.The European Physical Journal D, 60(3):601–608, 2010

    Remi Dussart, Lawrence J Overzet, Philippe Lefaucheux, Thierry Dufour, Mukesh Kulsre- shath, MA Mandra, Thomas Tillocher, Olivier Aubry, Sébastien Dozias, Pierre Ranson, et al. Integrated micro-plasmas in silicon operating in helium.The European Physical Journal D, 60(3):601–608, 2010

    work page 2010

  25. [25]

    Recent advances in microcavity plasma devices and arrays: a versatile photonic platform.Journal of Physics D: Applied Physics, 38(11):1644, 2005

    J Gary Eden, SJ Park, NP Ostrom, and KF Chen. Recent advances in microcavity plasma devices and arrays: a versatile photonic platform.Journal of Physics D: Applied Physics, 38(11):1644, 2005

    work page 2005

  26. [26]

    Microplasma devices fabricated in silicon, ceramic, and 37 metal/polymer structures: arrays, emitters and photodetectors.Journal of Physics D: Applied Physics, 36(23):2869, 2003

    J Gary Eden, SJ Park, NP Ostrom, ST McCain, CJ Wagner, BA Vojak, J Chen, C Liu, P Von Allmen, F Zenhausern, et al. Microplasma devices fabricated in silicon, ceramic, and 37 metal/polymer structures: arrays, emitters and photodetectors.Journal of Physics D: Applied Physics, 36(23):2869, 2003

    work page 2003

  27. [27]

    Uniform propagation of cathode-directed surface ionization waves at atmospheric pressure.Plasma Sources Science and Technology, 29(6):065012, 2020

    T Darny, D Babonneau, S Camelio, and DZ Pai. Uniform propagation of cathode-directed surface ionization waves at atmospheric pressure.Plasma Sources Science and Technology, 29(6):065012, 2020

    work page 2020

  28. [28]

    Orrière and D

    T. Orrière and D. Z. Pai. Stimulation of surface ionization waves by pulsed laser irradiation. Applied Physics Letters, 2026. submitted

    work page 2026

  29. [29]

    Photodetection in the visible, ultraviolet, and near-infrared with silicon microdischarge devices.Applied physics letters, 81(24):4529–4531, 2002

    S-J Park, JG Eden, and JJ Ewing. Photodetection in the visible, ultraviolet, and near-infrared with silicon microdischarge devices.Applied physics letters, 81(24):4529–4531, 2002

    work page 2002

  30. [30]

    Microcavity plasma photodetectors: Photosensitivity, dynamic range, and the plasma-semiconductor interface.Applied Physics Letters, 87(14), 2005

    NP Ostrom and JG Eden. Microcavity plasma photodetectors: Photosensitivity, dynamic range, and the plasma-semiconductor interface.Applied Physics Letters, 87(14), 2005

    work page 2005

  31. [31]

    Coupling electron-hole and electron-ion plasmas: Realizationofannpnplasmabipolarjunctionphototransistor.AppliedPhysicsLetters,97(13), 2010

    CJ Wagner, PA Tchertchian, and JG Eden. Coupling electron-hole and electron-ion plasmas: Realizationofannpnplasmabipolarjunctionphototransistor.AppliedPhysicsLetters,97(13), 2010

    work page 2010

  32. [32]

    Control of the interface between electron-hole and electron-ion plasmas: Hybrid semiconductor-gas phase devices as a gateway for plasma science, 2011

    PA Tchertchian, CJ Wagner, TJ Houlahan Jr, B Li, DJ Sievers, and JG Eden. Control of the interface between electron-hole and electron-ion plasmas: Hybrid semiconductor-gas phase devices as a gateway for plasma science, 2011

    work page 2011

  33. [33]

    Modulating the secondary electron emission coefficient at the base-collector interface of the plasma bipolar junction transistor.Applied Physics Letters, 102(8), 2013

    B Li, TJ Houlahan, CJ Wagner, and JG Eden. Modulating the secondary electron emission coefficient at the base-collector interface of the plasma bipolar junction transistor.Applied Physics Letters, 102(8), 2013

    work page 2013

  34. [34]

    40000pixel arrays of ac-excited silicon microcavity plasma devices.Applied physics letters, 86(11), 2005

    S-J Park, K-F Chen, NP Ostrom, and JG Eden. 40000pixel arrays of ac-excited silicon microcavity plasma devices.Applied physics letters, 86(11), 2005

    work page 2005

  35. [35]

    PhDthesis,UniversitédePoitiers, 2018

    Thomas Orrière.Confinement micrométrique des décharges pulsées nanosecondes dans l’air àpressionatmosphériqueeteffetsélectro-aérodynamiques. PhDthesis,UniversitédePoitiers, 2018. 38

    work page 2018

  36. [36]

    Atmospheric pressure discharge filaments and microplasmas: physics, chemistry and diagnostics.Journal of physics D: applied physics, 46(46):464001, 2013

    Peter Bruggeman and Ronny Brandenburg. Atmospheric pressure discharge filaments and microplasmas: physics, chemistry and diagnostics.Journal of physics D: applied physics, 46(46):464001, 2013

    work page 2013

  37. [37]

    Measurement of intensity ratio of nitrogen bands as a function of field strength.Journal of Physics D: Applied Physics, 37(8):1179, 2004

    P Paris, M Aints, M Laan, and F Valk. Measurement of intensity ratio of nitrogen bands as a function of field strength.Journal of Physics D: Applied Physics, 37(8):1179, 2004

    work page 2004

  38. [38]

    ND Lepikhin, NA Popov, and SM Starikovskaia. On electric field measurements based on intensity ratio of 1- and 2+ systems of nitrogen in discharges with high specific deposited energy.Plasma Sources Science and Technology, 31(8):084002, 2022

    work page 2022

  39. [39]

    Electricfielddeterminationin transient plasmas: in situ & non-invasive methods.Plasma Sources Science and Technology, 31(7):073001, 2022

    BenjaminMGoldberg,TomášHoder,andRonnyBrandenburg. Electricfielddeterminationin transient plasmas: in situ & non-invasive methods.Plasma Sources Science and Technology, 31(7):073001, 2022

    work page 2022

  40. [40]

    Modification of the electric field distribution in a diffuse streamer-induced discharge under extreme overvoltage.Plasma Sources Science and Technology, 28(5):055016, 2019

    Alexandra Brisset, Kristaq Gazeli, Lionel Magne, Stéphane Pasquiers, Pascal Jeanney, Em- manuel Marode, and Pierre Tardiveau. Modification of the electric field distribution in a diffuse streamer-induced discharge under extreme overvoltage.Plasma Sources Science and Technology, 28(5):055016, 2019

    work page 2019

  41. [41]

    Electric field development in positive and negative streamers on dielectric surface.Plasma Sources Science and Technology, 30(10):105008, 2021

    Jaroslav Jánsk`y, Delphine Bessiéres, Ronny Brandenburg, Jean Paillol, and Tomáš Hoder. Electric field development in positive and negative streamers on dielectric surface.Plasma Sources Science and Technology, 30(10):105008, 2021

    work page 2021

  42. [42]

    On the melting thresholds of semiconductors under nanosecond pulse laser irradiation.Applied Sciences, 13(6):3818, 2023

    Jiří Beránek, Alexander V Bulgakov, and Nadezhda M Bulgakova. On the melting thresholds of semiconductors under nanosecond pulse laser irradiation.Applied Sciences, 13(6):3818, 2023

    work page 2023

  43. [43]

    Ultrafast dynamics of electrons and phonons: from the two-temperature model to the time-dependent boltzmann equation.Advances in Physics: X, 7(1):2095925, 2022

    Fabio Caruso and Dino Novko. Ultrafast dynamics of electrons and phonons: from the two-temperature model to the time-dependent boltzmann equation.Advances in Physics: X, 7(1):2095925, 2022

    work page 2022

  44. [44]

    Experimentalstudyofinfrared nanosecond laser ablation of silicon: The multi-pulse enhancement effect.Applied surface 39 science, 256(7):2092–2096, 2010

    ZiyiFu,BenxinWu,YiboGao,YunZhou,andChengjiaoYu. Experimentalstudyofinfrared nanosecond laser ablation of silicon: The multi-pulse enhancement effect.Applied surface 39 science, 256(7):2092–2096, 2010

    work page 2092

  45. [45]

    Influenceofthepulsenumberandfluenceofa nanosecondlaserontheablationrateofmetals,semiconductorsanddielectrics.TheEuropean Physical Journal-Applied Physics, 47(3):30702, 2009

    IVladoiu,MStafe,CNegutu,andIMPopescu. Influenceofthepulsenumberandfluenceofa nanosecondlaserontheablationrateofmetals,semiconductorsanddielectrics.TheEuropean Physical Journal-Applied Physics, 47(3):30702, 2009

    work page 2009

  46. [46]

    Nanosecond laser-induced controllable periodical surface structures on silicon.Chinese Optics Letters, 20(1):013802, 2022

    LeiChen,ZelinLiu,ChuanGuo,TongchengYu,MinsunChen,ZhongjieXu,HaoLiu,Guomin Zhao, and Kai Han. Nanosecond laser-induced controllable periodical surface structures on silicon.Chinese Optics Letters, 20(1):013802, 2022

    work page 2022

  47. [47]

    Picosecond laser texturization of mc-silicon for photovoltaics: A comparison between 1064 nm, 532 nm and 355 nm radiation wavelengths.Applied Surface Science, 371:196–202, 2016

    Simona Binetti, Alessia Le Donne, Andrea Rolfi, Beat Jäggi, Beat Neuenschwander, Chiara Busto, Cesare Frigeri, Davide Scorticati, Luca Longoni, and Sergio Pellegrino. Picosecond laser texturization of mc-silicon for photovoltaics: A comparison between 1064 nm, 532 nm and 355 nm radiation wavelengths.Applied Surface Science, 371:196–202, 2016

    work page 2016

  48. [48]

    Random sample consensus: a paradigm for model fittingwithapplicationstoimageanalysisandautomatedcartography.Communicationsofthe ACM, 24(6):381–395, 1981

    Martin A Fischler and Robert C Bolles. Random sample consensus: a paradigm for model fittingwithapplicationstoimageanalysisandautomatedcartography.Communicationsofthe ACM, 24(6):381–395, 1981

    work page 1981

  49. [49]

    Scipy 1.0: fundamental algorithms for scientific computing in python.Nature methods, 17(3):261–272, 2020

    Pauli Virtanen, Ralf Gommers, Travis E Oliphant, Matt Haberland, Tyler Reddy, David Cournapeau, Evgeni Burovski, Pearu Peterson, Warren Weckesser, Jonathan Bright, et al. Scipy 1.0: fundamental algorithms for scientific computing in python.Nature methods, 17(3):261–272, 2020

    work page 2020

  50. [50]

    Baselinecorrectionusingadaptiveiteratively reweighted penalized least squares.Analyst, 135(5):1138–1146, 2010

    Zhi-MinZhang,ShanChen,andYi-ZengLiang. Baselinecorrectionusingadaptiveiteratively reweighted penalized least squares.Analyst, 135(5):1138–1146, 2010

    work page 2010

  51. [51]

    Optical properties of thin films.Reports on Progress in Physics, 23(1):1, 1960

    Oskar Sigmund Heavens. Optical properties of thin films.Reports on Progress in Physics, 23(1):1, 1960

    work page 1960

  52. [52]

    Academic press, 1998

    Edward D Palik.Handbook of optical constants of solids, volume 3. Academic press, 1998

    work page 1998

  53. [53]

    Interspecimen comparison of the refractive index of fused silica.Journal of the optical society of America, 55(10):1205–1209, 1965

    Ian H Malitson. Interspecimen comparison of the refractive index of fused silica.Journal of the optical society of America, 55(10):1205–1209, 1965. 40

    work page 1965

  54. [54]

    Laser-stimulated photodetachment of electrons from the negatively charged dielectric substrates.Applied Physics Letters, 125(25), 2024

    Y Ussenov, MN Shneider, S Yatom, and Y Raitses. Laser-stimulated photodetachment of electrons from the negatively charged dielectric substrates.Applied Physics Letters, 125(25), 2024

    work page 2024

  55. [55]

    Removalofhigh-voltage-induced surface charges by ultraviolet light.Review of Scientific Instruments, 96(7), 2025

    MTZiemba,JPhrompao,FJung,IMRabey,andGRempe. Removalofhigh-voltage-induced surface charges by ultraviolet light.Review of Scientific Instruments, 96(7), 2025

    work page 2025

  56. [56]

    Role of charge photodesorption in self-synchronized breakdown of surface streamers in air at atmospheric pressure.Applied Physics Letters, 98(7), 2011

    Olivier Guaitella, Ilya Marinov, and Antoine Rousseau. Role of charge photodesorption in self-synchronized breakdown of surface streamers in air at atmospheric pressure.Applied Physics Letters, 98(7), 2011

    work page 2011

  57. [57]

    Robert Tschiersch, Sebastian Nemschokmichal, and Jürgen Meichsner. Influence of released surface electrons on the pre-ionization of helium barrier discharges: Laser photodesorption experiment and 1d fluid simulation.Plasma Sources Science and Technology, 26(7):075006, 2017

    work page 2017

  58. [58]

    Repetitively pulsed streamer discharge with laser-induced surface trapped electrondesorptiontoexploitresidualchargesinsitu.PlasmaSourcesScienceandTechnology, 33(5):055014, 2024

    Zheng Zhao, Qiuyu Gao, Xiaoran Li, Haowei Zhang, Luying Bai, Yifei Zhu, Anbang Sun, and Jiangtao Li. Repetitively pulsed streamer discharge with laser-induced surface trapped electrondesorptiontoexploitresidualchargesinsitu.PlasmaSourcesScienceandTechnology, 33(5):055014, 2024

    work page 2024

  59. [59]

    Springer Science & Business Media, 2013

    Jagdeep Shah.Ultrafast spectroscopy of semiconductors and semiconductor nanostructures, volume 115. Springer Science & Business Media, 2013

    work page 2013

  60. [60]

    Thermophysical properties of matter-the tprc data series

    Yeram Sarkis Touloukian and Edgar H Buyco. Thermophysical properties of matter-the tprc data series. volume 4. specific heat-metallic elements and alloys. 1971

    work page 1971

  61. [61]

    Self-consistent optical parameters of intrinsic silicon at 300 k including temperature coefficients.Solar Energy Materials and Solar Cells, 92(11):1305–1310, 2008

    Martin A Green. Self-consistent optical parameters of intrinsic silicon at 300 k including temperature coefficients.Solar Energy Materials and Solar Cells, 92(11):1305–1310, 2008

    work page 2008

  62. [62]

    Pearson Education, Upper Saddle River, NJ, 2010

    Chenming Hu.Modern Semiconductor Devices for Integrated Circuits. Pearson Education, Upper Saddle River, NJ, 2010

    work page 2010

  63. [63]

    John wiley & sons, 2021

    Simon M Sze, Yiming Li, and Kwok K Ng.Physics of semiconductor devices. John wiley & sons, 2021. 41

    work page 2021

  64. [64]

    Computermodelingofthetemperatureriseandcarrierconcentra- tion induced in silicon by nanosecond laser pulses.Journal of Applied Physics, 53(4):3207– 3213, 1982

    ALietoilaandJFGibbons. Computermodelingofthetemperatureriseandcarrierconcentra- tion induced in silicon by nanosecond laser pulses.Journal of Applied Physics, 53(4):3207– 3213, 1982

    work page 1982

  65. [65]

    Quantum efficiencies exceeding unity due to impact ionization in silicon solar cells.Applied Physics Letters, 63(17):2405–2407, 1993

    Sabine Kolodinski, Jürgen H Werner, Thomas Wittchen, and Hans J Queisser. Quantum efficiencies exceeding unity due to impact ionization in silicon solar cells.Applied Physics Letters, 63(17):2405–2407, 1993

    work page 1993

  66. [66]

    Hot-electron-induced photon and photocarrier generation in silicon mosfet’s.IEEE Transactions on Electron Devices, 31(9):1264–1273, 1984

    Simon Tam and Chenming Hu. Hot-electron-induced photon and photocarrier generation in silicon mosfet’s.IEEE Transactions on Electron Devices, 31(9):1264–1273, 1984

    work page 1984

  67. [67]

    Impact-ionization theory consistent with a realistic band structure of silicon.Physical Review B, 45(8):4171, 1992

    Nobuyuki Sano and Akira Yoshii. Impact-ionization theory consistent with a realistic band structure of silicon.Physical Review B, 45(8):4171, 1992

    work page 1992

  68. [68]

    JCD publishing, 2007

    Gerald C Holst and Lomheim GC.CMOS/CCD Sensors. JCD publishing, 2007

    work page 2007

  69. [69]

    Phd thesis, DTU Nanotech, Technical University of Denmark, 2018

    Maksym Plakhotnyuk.Nanostructured Heterojunction Crystalline Silicon Solar Cells with Transition Metal Oxide Carrier Selective Contacts. Phd thesis, DTU Nanotech, Technical University of Denmark, 2018

    work page 2018

  70. [70]

    Statistics of the recombinations of holes and electrons

    WTRW Shockley and WT Read Jr. Statistics of the recombinations of holes and electrons. Physical review, 87(5):835, 1952

    work page 1952

  71. [71]

    Macdonald.Recombination and Trapping in Multicrystalline Silicon Solar Cells

    D. Macdonald.Recombination and Trapping in Multicrystalline Silicon Solar Cells. Phd thesis, The Australian National University, 2001

    work page 2001

  72. [72]

    JohnWiley&Sons, 2015

    DieterKSchroder.Semiconductormaterialanddevicecharacterization. JohnWiley&Sons, 2015

    work page 2015

  73. [73]

    Springer, 2005

    Stefan Rein.Lifetime spectroscopy: a method of defect characterization in silicon for photo- voltaic applications. Springer, 2005

    work page 2005

  74. [74]

    Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons, protons and pions

    G Kramberger, V Cindro, I Mandić, M Mikuž, and M Zavrtanik. Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons, protons and pions. NuclearInstrumentsandMethodsinPhysicsResearchSectionA:Accelerators,Spectrometers, Detectors and Associated Equipment, 481(1-3):297–305, 2002. 42

    work page 2002

  75. [75]

    G Kramberger, V Cindro, I Mandić, M Mikuž, and M Zavrtanik. Determination of effective trapping times for electrons and holes in irradiated silicon.Nuclear Instruments and Meth- ods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 476(3):645–651, 2002

    work page 2002

  76. [76]

    Facet-dependent surface trap states and carrier lifetimes of silicon.Nano letters, 20(3):1952–1958, 2020

    Chih-Shan Tan, Yicheng Zhao, Rong-Hao Guo, Wei-Tsung Chuang, Lih-Juann Chen, and Michael H Huang. Facet-dependent surface trap states and carrier lifetimes of silicon.Nano letters, 20(3):1952–1958, 2020

    work page 1952

  77. [77]

    Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors

    Tibor Grasser, Hans Reisinger, Paul-Jürgen Wagner, and Ben Kaczer. Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors. Physical Review B—Condensed Matter and Materials Physics, 82(24):245318, 2010

    work page 2010

  78. [78]

    Exploringthebordertrapsnearthevalencebandinthesio2-si c system using above-band-gap optical excitation.Physical Review Applied, 21(6):064065, 2024

    PiyushKumar,HGMedeiros,SalvatoreRace,MIMMartins,PAmmann,MEBathen,Thomas Prokscha,andUlrikeGrossner. Exploringthebordertrapsnearthevalencebandinthesio2-si c system using above-band-gap optical excitation.Physical Review Applied, 21(6):064065, 2024

    work page 2024

  79. [79]

    DavidZPai,FrédéricPailloux,andDavidBabonneau.Insituramanspectroscopyofnanostruc- turation by surface plasmas generated on alumina thin film-silicon bilayers.Plasma Sources Science and Technology, 28(8):085007, 2019. 43

    work page 2019