Nanosecond pulsed illumination at 532-1064 nm on the Si-SiO2 interface in atmospheric SeBDs enhances plasma emission and reduced electric field via wavelength-dependent photogeneration of carriers in the depletion region, analogous to MOS photodetector behavior.
Computermodelingofthetemperatureriseandcarrierconcentra- tion induced in silicon by nanosecond laser pulses.Journal of Applied Physics, 53(4):3207– 3213, 1982
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Photonic Interactions with Semiconducting Barrier Discharges
Nanosecond pulsed illumination at 532-1064 nm on the Si-SiO2 interface in atmospheric SeBDs enhances plasma emission and reduced electric field via wavelength-dependent photogeneration of carriers in the depletion region, analogous to MOS photodetector behavior.