Nanosecond pulsed illumination at 532-1064 nm on the Si-SiO2 interface in atmospheric SeBDs enhances plasma emission and reduced electric field via wavelength-dependent photogeneration of carriers in the depletion region, analogous to MOS photodetector behavior.
Influenceofthepulsenumberandfluenceofa nanosecondlaserontheablationrateofmetals,semiconductorsanddielectrics.TheEuropean Physical Journal-Applied Physics, 47(3):30702, 2009
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
physics.plasm-ph 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Photonic Interactions with Semiconducting Barrier Discharges
Nanosecond pulsed illumination at 532-1064 nm on the Si-SiO2 interface in atmospheric SeBDs enhances plasma emission and reduced electric field via wavelength-dependent photogeneration of carriers in the depletion region, analogous to MOS photodetector behavior.